公开(公告)号：US08853616B2

公开(公告)日：2014-10-07

申请号：US13804380

申请日：2013-03-14

Applicant: JEOL Ltd.

Inventor： Masaki Mukai

IPC: H01J37/02 ,  H01J37/05 ,  H01J37/26

CPC classification number: H01J37/023 ,  H01J37/05 ,  H01J37/26 ,  H01J2237/057 ,  H01J2237/21 ,  H01J2237/248 ,  H01J2237/2802

Abstract: There is provided a method of adjusting a transmission electron microscope to facilitate an adjustment for bringing a focal plane of an electron beam exiting a two-stage filter type monochromator into coincidence with an achromatic plane. The method starts with obtaining a transmission electron microscope image including interference fringes of the electron beam that are generated by an aperture located behind the monochromator. The focal plane of the beam exiting the monochromator is brought into coincidence with the achromatic plane by adjusting the intensity of an electrostatic lens, the intensities of the electric and magnetic fields produced by at least one of two energy filters, or astigmatism generated in the monochromator based on an intensity distribution of the interference fringes in the obtained transmission electron microscope image.

Abstract translation: 提供了一种调节透射电子显微镜以便于使离开两级滤光器型单色仪的电子束的焦平面与无色平面一致的调整的方法。 该方法从获得透射电子显微镜图像开始，包括由位于单色仪后面的孔产生的电子束的干涉条纹。 离开单色仪的光束的焦平面通过调节静电透镜的强度，由两个能量过滤器中的至少一个产生的电场和磁场的强度或在单色仪中产生的像散而与无色平面一致 基于获得的透射电子显微镜图像中的干涉条纹的强度分布。

公开(公告)号：US08507858B2

公开(公告)日：2013-08-13

申请号：US13652110

申请日：2012-10-15

Applicant: Advantest Corporation

Inventor： Hiroshi Fukaya ,  Yoshiaki Ogiso

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/244

CPC classification number: G01N23/225 ,  G01N2223/611 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/248 ,  H01J2237/2817

Abstract: Referring to design data for a sample, a measurement region is defined at a portion in the design data which has no step in an edge of a pattern. In addition, an edge as a characteristic portion is detected from the design data, and an edge as a characteristic portion corresponding to the characteristic portion of the design data is detected from a secondary electron image. Then, the measurement region is positioned and located in a secondary electron image based on a positional relationship between the edge of the design data and the edge of the secondary electron image. A width of the pattern is measured on the basis of a distance between the two edges included in the measurement region thus located.

Abstract translation: 参考样本的设计数据，在图案边缘没有步骤的设计数据的部分定义测量区域。 此外，从设计数据检测作为特征部分的边缘，并且从二次电子图像检测作为与设计数据的特征部分相对应的特征部分的边缘。 然后，基于设计数据的边缘与二次电子图像的边缘之间的位置关系，将测量区域定位并位于二次电子图像中。 基于包括在如此定位的测量区域中的两个边缘之间的距离来测量图案的宽度。

公开(公告)号：US07663103B2

公开(公告)日：2010-02-16

申请号：US11726966

申请日：2007-03-23

Applicant: Masayuki Kuribara ,  Jun Matsumoto

Inventor： Masayuki Kuribara ,  Jun Matsumoto

IPC: G01N23/225

CPC classification number: G01B15/04 ,  G01N23/225 ,  H01J2237/24535 ,  H01J2237/24578 ,  H01J2237/248 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: A line-width measurement adjusting method, which is used when first and second electron beam intensity distributions for measuring a line width are produced from intensity distribution images of secondary electrons obtained respectively by scanning a first irradiation distance with an electron beam at first magnification, and by scanning a second irradiation distance with an electron beam at second magnification, includes the step of adjusting the second electron beam intensity distribution of the electron beam at the second magnification such that the second electron beam intensity distribution is equal to the first electron beam intensity distribution of the electron beam at first magnification. The second electron beam intensity distribution may be adjusted by increasing or decreasing a second irradiation distance when producing the electron beam intensity distribution.

Abstract translation: 线宽测量调整方法，用于当用于测量线宽度的第一和第二电子束强度分布由分别通过在第一放大倍率下用电子束扫描第一照射距离获得的二次电子的强度分布图像产生时， 通过在第二倍率下用电子束扫描第二照射距离，包括以第二倍率调整电子束的第二电子束强度分布的步骤，使得第二电子束强度分布等于第一电子束强度分布 的电子束。 可以通过在产生电子束强度分布时增加或减少第二照射距离来调节第二电子束强度分布。

公开(公告)号：US20100019166A1

公开(公告)日：2010-01-28

申请号：US11571695

申请日：2005-07-05

Applicant: Ho Seob Kim ,  Byeng Jin Kim

Inventor： Ho Seob Kim ,  Byeng Jin Kim

IPC: H01J3/14

CPC classification number: H01J37/263 ,  B82Y10/00 ,  B82Y40/00 ,  H01J3/14 ,  H01J37/04 ,  H01J37/3007 ,  H01J37/302 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/248 ,  H01J2237/28 ,  H01J2237/31752

Abstract: Provided is a method for controlling electron beams in a multi-microcolumn, in which unit microcolumns having an electron emitter, a lens, and a deflector are arranged in an n×m matrix. A voltage is uniformly or differentially applied to each electron emitter or extractor. The same control voltage or different voltages are applied to a region at coordinates in a control division area of each extractor to deflect the electron beams. Lens layers not corresponding to the extractors are collectively or individually controlled so as to efficiently control the electron beams of the unit microcolumn. Further, a multi-microcolumn using the method is provided.

Abstract translation: 提供了一种用于控制多微柱中的电子束的方法，其中具有电子发射器，透镜和偏转器的单元微柱以n×m矩阵排列。 电压均匀或差分施加到每个电子发射器或提取器。 将相同的控制电压或不同的电压施加到每个提取器的控制分割区域中的坐标处的区域以偏转电子束。 不对应于提取器的透镜层被集体地或单独地控制，以便有效地控制单元微柱的电子束。 此外，提供了使用该方法的多微柱。

公开(公告)号：US20080018460A1

公开(公告)日：2008-01-24

申请号：US11779686

申请日：2007-07-18

Applicant: Koji Ishiguro ,  Kaoru Umemura ,  Noriyuki Kaneoka

Inventor： Koji Ishiguro ,  Kaoru Umemura ,  Noriyuki Kaneoka

IPC: G08B21/00 ,  G21K5/10

CPC classification number: H01J37/3056 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/0225 ,  H01J2237/05 ,  H01J2237/24514 ,  H01J2237/248 ,  H01J2237/30455 ,  H01J2237/31744 ,  H01J2237/31745

Abstract: Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.

Abstract translation: 提供一种能够通过将半导体制造工序的金属污染的扩散抑制到最小来提高产率的带电粒子束处理装置。 带电粒子束处理装置包括离子束柱1，其连接到真空容器10并用非金属离子种类的离子束11照射样品35，微量取样单元3具有探针16，其提取切出的微量样品43 从样品35通过离子束11，放出用于接合微量样品43和探针16的气体的气枪2，连接到同一真空容器10的污染测量束柱6A，离子束柱 1通过离子束柱1连接并用污染测量光束13照射离子束照射迹线;以及检测器7，其在照射离子束柱1时检测由离子束柱1从离子束照射迹线发射的特征X射线 污染测量梁13。

公开(公告)号：US20020033449A1

公开(公告)日：2002-03-21

申请号：US09891611

申请日：2001-06-27

Inventor： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

IPC: G21K007/00 ,  G01N023/00

CPC classification number: G03F7/70616 ,  G01N23/225 ,  H01J37/05 ,  H01J37/06 ,  H01J37/073 ,  H01J37/075 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/057 ,  H01J2237/06316 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/2446 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/248 ,  H01J2237/2482 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

Abstract translation: 检查装置及使用该检查装置的半导体装置的制造方法。 检查装置用于诸如晶片的样品的缺陷检查，线宽测量，表面电位测量等。 在检查装置中，多个带电粒子从初级光学系统传送到样品，从样品发射的二次带电粒子与主光学系统分离，并通过二次光学系统引入到检测器。 在移动样品的同时进行带电粒子的照射。 带电粒子的照射点沿着样品的移动方向排列成N行，沿着与其垂直的方向排列成M列。 带电粒子的每一列照射点在垂直于样品的移动方向的方向上连续移动预定量。

公开(公告)号：US20190074159A1

公开(公告)日：2019-03-07

申请号：US16115287

申请日：2018-08-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Noritsugu Takahashi ,  Yasunari Sohda ,  Akira Ikegami ,  Yuta Kawamoto

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/141 ,  H01J37/147

CPC classification number: H01J37/28 ,  H01J37/141 ,  H01J37/1471 ,  H01J37/1475 ,  H01J37/1477 ,  H01J37/244 ,  H01J2237/1504 ,  H01J2237/1508 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/2449 ,  H01J2237/248 ,  H01J2237/2817

Abstract: The present invention enlarges a range of movement of field of view by beam deflection with a simple deflector configuration and suppresses deterioration of a signal electron detection rate caused by the beam deflection. A scanning electron microscope according to the present invention is provided with a first deflection field setting module that sets plural deflectors to move a scanning area on a specimen by a primary electron beam to a position deviated from an axis extended from an electron source toward the center of an objective lens and a second deflection field setting module that sets the plural deflectors so that trajectories of signal electrons are corrected without changing the scanning area set by the first deflection field setting module. The control unit controls the plural deflectors by adding a setting value set by the second deflection field setting module to a setting value set by the first deflection field setting module.

公开(公告)号：US09881769B2

公开(公告)日：2018-01-30

申请号：US15023456

申请日：2014-10-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Kenji Aoki ,  Tsutomu Saitou ,  Kotaro Hosoya ,  Mitsuhiro Nakamura ,  Kunji Shigeto

IPC: H01J37/28 ,  H01J37/29 ,  H01J37/073 ,  H01J37/244

CPC classification number: H01J37/292 ,  H01J37/073 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/18 ,  H01J2237/24465 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/248 ,  H01J2237/2809

Abstract: The objective of the present invention is to provide a charged particle beam device, wherein the positional relationship between reflected electron detection elements and a sample and the vacuum state of the sample surroundings are evaluated to select automatically a reflected electron detection element appropriate for acquiring an intended image. In this charged particle beam device, all the reflected electron detection elements are selected when the degree of vacuum inside the sample chamber is high and the sample is distant from the reflected electron detectors, while a reflected electron detection element appropriate for acquiring a compositional image or a height map image is selected when the degree of vacuum inside the sample chamber is high and the sample is close to the reflected electron detectors. When the degree of vacuum inside the sample chamber is low, all the reflected electron detection elements are selected.

公开(公告)号：US20170236687A1

公开(公告)日：2017-08-17

申请号：US15581164

申请日：2017-04-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Eric J. Campbell ,  Sarah K. Czaplewski

IPC: H01J37/28 ,  G01N23/22 ,  G01B15/00

CPC classification number: H01J37/28 ,  G01B15/02 ,  G01B15/04 ,  G01N23/22 ,  G01N23/2252 ,  G01N2223/079 ,  G01N2223/304 ,  G01N2223/418 ,  G01N2223/633 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/24585 ,  H01J2237/248 ,  H01J2237/2807 ,  H01J2237/2815

Abstract: A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for energy levels at mesh locations. A number of layers of the sample are determined by distinguishing differences in chemical composition between depths as beam energies are stepped through. A depth profile is generated for the area of interest by compiling the number of layers and the element composition across the mesh.

公开(公告)号：US20170200583A1

公开(公告)日：2017-07-13

申请号：US15427764

申请日：2017-02-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Eric J. Campbell ,  Sarah K. Czaplewski

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  G01B15/02 ,  G01B15/04 ,  G01N23/22 ,  G01N23/2252 ,  G01N2223/079 ,  G01N2223/304 ,  G01N2223/418 ,  G01N2223/633 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/24585 ,  H01J2237/248 ,  H01J2237/2807 ,  H01J2237/2815

Abstract: A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an energy-dispersive X-ray spectroscopy (EDS) spectrum for an energy level to determine element composition across an area of interest. A mesh is generated to locate positions where a depth profile will be taken. EDS spectra are gathered for energy levels at mesh locations. A number of layers of the sample are determined by distinguishing differences in chemical composition between depths as beam energies are stepped through. A depth profile is generated for the area of interest by compiling the number of layers and the element composition across the mesh.