BUMP FABRICATION PROCESS
    42.
    发明申请
    BUMP FABRICATION PROCESS 有权
    BUMP制造工艺

    公开(公告)号:US20030166331A1

    公开(公告)日:2003-09-04

    申请号:US10248688

    申请日:2003-02-10

    Abstract: A bump fabrication process for forming a bump over a wafer having a plurality of bonding pads thereon is provided. A patterned solder mask layer having a plurality of openings that exposes the respective bonding pads is formed over a wafer. The area of the opening in a the cross-sectional area through a the bottom-section as well as through a the top-section of the opening is smaller than the area of the opening in a the cross-sectional area through a the mid-section of the opening. Solder material is deposited into the opening and then a reflow process is conducted fusing the solder material together to form a spherical bump inside the opening. Finally, the solder mask layer is removed. In addition, a pre-formed bump may form on the bonding pad of the wafer prior to forming the patterned solder mask layer over the wafer having at leastwith an opening that exposes the pre-formed bump. Solder material is deposited into the openings and then a reflow process is conducted fusing the solder material and the pre-formed bump together to form a spherical bump. The pre-formed bump and the solder material may be fabricated using different constituents.

    Abstract translation: 提供了一种用于在其上具有多个接合焊盘的晶片上形成凸块的凸块制造工艺。 具有暴露各个接合焊盘的多个开口的图案化焊接掩模层形成在晶片上。 通过底部的横截面积中的开口面积以及通过开口的顶部的开口面积比通过中间部分的横截面积的开口面积小, 部分开幕。 将焊料沉积到开口中,然后进行回流工艺,将焊料材料熔合在一起,以在开口内形成球形凸块。 最后,去除焊接掩模层。 此外,在晶片上形成图案化的焊料掩模层之前,至少具有暴露预形成的凸块的开口,可以在晶片的焊盘上形成预先形成的凸点。 将焊料沉积到开口中,然后进行回流工艺,将焊料材料和预形成的凸块熔合在一起形成球形凸块。 可以使用不同的成分制造预形成的凸块和焊料材料。

    Capacitive micromachined ultrasonic transducer (CMUT) with through-substrate via (TSV) substrate plug
    50.
    发明授权
    Capacitive micromachined ultrasonic transducer (CMUT) with through-substrate via (TSV) substrate plug 有权
    电容式微加工超声波换能器(CMUT),带有通孔(TSV)基板插头

    公开(公告)号:US09351081B2

    公开(公告)日:2016-05-24

    申请号:US13779210

    申请日:2013-02-27

    Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

    Abstract translation: 电容式微加工超声波传感器(CMUT)装置包括至少一个CMUT单元,其包括单晶材料的第一基板,其具有包括厚和薄的电介质区域的在其上的图案化电介质层的顶侧,以及贯穿基板通孔 TSV)延伸第一基板的整个厚度。 TSV由单晶材料形成,通过单晶材料中的隔离区电隔离,并且位于第一基板的顶侧接触区域的下方。 膜层结合到厚电介质区域和薄介电区域上,以在微机电系统(MEMS)腔体上提供可移动膜。 金属层在顶侧基板接触区域上方并且在可移动膜上方,包括顶侧基板接触区域与可动膜的耦合。

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