公开(公告)号：US20180002161A1

公开(公告)日：2018-01-04

申请号：US15636887

申请日：2017-06-29

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Colin Robert JENKINS ,  Scott Lyall CARGILL ,  Clive Robert GRAHAM

IPC: B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  H04R31/00 ,  H04R19/04

CPC classification number: B81B3/0021 ,  B81B3/0078 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C3/001 ,  H04R7/04 ,  H04R19/005 ,  H04R19/04 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003 ,  H04R2499/15

Abstract: The present application describes MEMS transducer having a membrane and a membrane electrode. The membrane and membrane electrode form a two-layer structure. The membrane electrode is in the form of a lattice of conductive material. The pitch of the lattice and/or the size of the openings varies from a central region of the membrane electrode to a region laterally outside the central region.

公开(公告)号：US20170369309A1

公开(公告)日：2017-12-28

申请号：US15379091

申请日：2016-12-14

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giorgio ALLEGATO ,  Laura OGGIONI ,  Matteo GARAVAGLIA ,  Roberto SOMASCHINI

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00269 ,  B81B3/0097 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/042 ,  B81B2203/0315 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/037

Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

公开(公告)号：US09850123B2

公开(公告)日：2017-12-26

申请号：US15297661

申请日：2016-10-19

Applicant: MKS Instruments, Inc.

Inventor： Lei Gu ,  Stephen F. Bart

IPC: H01L27/14 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81C1/00325 ,  B81C1/00547 ,  B81C2201/013 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.

公开(公告)号：US09845236B2

公开(公告)日：2017-12-19

申请号：US14645826

申请日：2015-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shao-Chi Yu ,  Chia-Ming Hung ,  Hsin-Ting Huang ,  Hsiang-Fu Chen ,  Allen Timothy Chang ,  Wen-Chuan Tai

IPC: B81C1/00 ,  G01L19/00 ,  B81B7/02 ,  G01L9/00 ,  G01K13/00 ,  G01N27/22

CPC classification number: B81C1/00269 ,  B81B7/02 ,  B81B2201/0214 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/096 ,  B81C2203/0109 ,  G01K13/00 ,  G01L9/0073 ,  G01L19/0092 ,  G01N27/221 ,  G01N2027/222

Abstract: The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.

公开(公告)号：US20170355598A1

公开(公告)日：2017-12-14

申请号：US15671647

申请日：2017-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Yen Chou ,  Chih-Jen Chan ,  Chia-Shiung Tsai ,  Ru-Liang Lee ,  Yuan-Chih Hsieh

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00595 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0292 ,  B81B2203/0109 ,  B81C1/00357 ,  B81C1/00801 ,  B81C2201/0132

Abstract: An integrated circuit (IC) device is provided. The IC device includes a first die including a first substrate and a second die including a second substrate. A plasma-reflecting layer is included on an upper surface of the first die. The plasma-reflecting layer is configured to reflect a plasma therefrom. The second substrate is bonded to the first die so as to form a cavity, wherein a lower surface of the cavity is lined by the plasma-reflecting layer. A dielectric protection layer is present on a lower surface of the second die and lines the upper surface of the cavity. A material of the second substrate has a first etch rate for the plasma and a material of the dielectric protection layer has a second etch rate for the plasma. The second etch rate is less than the first etch rate.

公开(公告)号：US20170355596A1

公开(公告)日：2017-12-14

申请号：US15669916

申请日：2017-08-05

Applicant: Versana Micro Inc

Inventor： BISHNU PRASANNA GOGOI

IPC: B81B7/02 ,  H01L27/14 ,  H01L41/113 ,  H01L27/22 ,  H05K7/02 ,  H01L27/16

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor,and a biological sensor.

公开(公告)号：US20170343437A1

公开(公告)日：2017-11-30

申请号：US15603652

申请日：2017-05-24

Applicant: DENSO CORPORATION

Inventor： Yasutake URA

IPC: G01L7/02 ,  G01L19/14

CPC classification number: G01L7/022 ,  B81B2201/0264 ,  G01L7/024 ,  G01L19/0046 ,  G01L19/04 ,  G01L19/146 ,  G01L23/10

Abstract: A pressure sensor outputting an electrical signal upon a fluid pressure in a target space includes a diaphragm having a pressure receiving surface disposed in the target space for receiving a fluid pressure, and a back surface on a back side of the pressure receiving surface, an inner member disposed to face the back surface and a diaphragm supporting portion connected to the diaphragm. The diaphragm includes a center portion disposed to face the inner member and is distorted as a concave shape toward the detecting direction because of the heat transmitted to the pressure receiving surface and the distortion of the center portion as a concave shape toward the detecting direction. A contacting portion provided on a connecting portion between the center portion and the outside portion is in contact with the inner member.

公开(公告)号：US20170328702A1

公开(公告)日：2017-11-16

申请号：US15355068

申请日：2016-11-18

Applicant: Kris Vossough ,  Farhang Yazdani

Inventor： Kris Vossough ,  Farhang Yazdani

IPC: G01B9/02

CPC classification number: G01B9/02051 ,  B81B3/0083 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/047 ,  B81B2207/012 ,  G01D5/35312 ,  G01D21/02 ,  G01L11/02 ,  G01P15/0802 ,  G01P15/093

Abstract: This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor or accelerometer. The system uses Fabry-Perot Interferometer in conjunction with beam collimator, beam splitter, optical waveguide and a photodetector integrated. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electrostatic actuators.

公开(公告)号：US20170313578A1

公开(公告)日：2017-11-02

申请号：US15647107

申请日：2017-07-11

Applicant: mCube, Inc.

Inventor： Chien Chen LEE ,  Tzu Feng CHANG

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/00 ,  G01C19/5783 ,  G01R33/02 ,  G01P15/08

CPC classification number: B81B7/0074 ,  B81B3/0035 ,  B81B3/0062 ,  B81B3/0072 ,  B81B7/0032 ,  B81B7/0045 ,  B81B7/0048 ,  B81B7/0051 ,  B81B7/0054 ,  B81B7/0077 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/0023 ,  B81C1/00261 ,  B81C1/00269 ,  B81C2203/0792 ,  G01C19/5719 ,  G01C19/5783 ,  G01L1/00 ,  G01L9/0042 ,  G01L19/0069 ,  G01L19/147 ,  G01P15/0802 ,  G01R33/02 ,  H04R2201/003

Abstract: A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.

公开(公告)号：US09791470B2

公开(公告)日：2017-10-17

申请号：US14141759

申请日：2013-12-27

Applicant: Intel Corporation

Inventor： Feras Eid ,  Sasha N. Oster ,  Kyu Oh Lee ,  Sarah Haney

IPC: H01L27/22 ,  G01P1/04 ,  G01P15/097 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC classification number: G01P1/04 ,  B81B3/0027 ,  B81B7/007 ,  B81B7/008 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/094 ,  B81C1/00238 ,  B81C1/00246 ,  B81C1/00333 ,  B81C1/00547 ,  B81C2201/056 ,  B81C2203/0172 ,  B81C2203/0714 ,  B81C2203/0792 ,  G01P15/097 ,  H01L27/22 ,  Y10T29/49075

Abstract: Magnet placement is described for integrated circuit packages. In one example, a terminal is applied to a magnet. The magnet is then placed on a top layer of a substrate with solder between the terminal and the top layer, and the solder is reflowed to attach the magnet to the substrate.