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公开(公告)号：US5682053A
公开(公告)日：1997-10-28
申请号：US588290
申请日：1996-01-18
Applicant: Witold Wiszniewski
Inventor： Witold Wiszniewski
IPC: B81B3/00 , B81C1/00 , G01K7/02 , H01L21/762 , H01L21/764 , H01L23/482 , H01L31/0352 , H01L31/103 , H01L35/34 , H01L29/82
CPC classification number: H01L35/34 , B81C1/0019 , G01K7/028 , H01L21/76264 , H01L21/764 , H01L23/4822 , H01L24/01 , H01L31/035281 , H01L31/103 , B81B2201/0278 , B81B2203/0109 , B81B2203/0118 , H01L21/76289 , H01L2924/12036 , H01L2924/1305 , H01L2924/13091 , Y02E10/50 , Y10S257/93 , Y10S73/01
Abstract: A simox wafer includes substrate (1), simox silicon dioxide layer (2) and monocrystalline simox silicon layer (3). An additional silicon nitride layer (5) is deposited on top of silicon layer (3) to allow the fabrication of a monocrystalline beam (4) by selectively etching the dioxide layer (2). The thermal insulating property of the resultant beam (4) offers an ideal site for construction of thermocouples (29), light modulators (60) and active components such as p-n diodes (34), MOS transistors (47) and bipolar transistors.
Abstract translation: simox晶片包括基底（1），simox二氧化硅层（2）和单晶硅氧化硅层（3）。 在硅层（3）的顶部上沉积另外的氮化硅层（5），以通过选择性地蚀刻二氧化物层（2）来制造单晶束（4）。 所得光束（4）的绝热性能提供了构造热电偶（29），光调制器（60）和诸如p-n二极管（34），MOS晶体管（47）和双极晶体管的有源部件的理想位置。
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公开(公告)号：US20240301395A1
公开(公告)日：2024-09-12
申请号：US18653435
申请日：2024-05-02
Applicant: Purigen Biosystems, Inc.
Inventor： Lewis A. Marshall , Amy L. Hiddessen , Nathan P. Hoverter , Klint A. Rose , Juan G. Santiago
IPC: C12N15/10 , B01L3/00 , B81B1/00 , B81B7/00 , C12Q1/6806 , G01N27/447
CPC classification number: C12N15/101 , B01L3/502753 , C12N15/10 , C12Q1/6806 , G01N27/4473 , G01N27/44739 , G01N27/44791 , G01N27/44795 , B01L3/502738 , B01L2300/0627 , B01L2300/0867 , B81B1/004 , B81B7/0087 , B81B2201/0278 , B81B2201/05 , B81B2203/0338 , G01N27/44704
Abstract: The present disclosure relates to fluidic systems and devices for processing, extracting, or purifying one or more analytes. These systems and devices can be used for processing samples and extracting nucleic acids, for example by isotachophoresis. In particular, the systems and related methods can allow for extraction of nucleic acids, including non-crosslinked nucleic acids, from samples such as tissue or cells. The systems and devices can also be used for multiplex parallel sample processing.
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公开(公告)号：US12054386B2
公开(公告)日：2024-08-06
申请号：US17175410
申请日：2021-02-12
Applicant: STMicroelectronics S.r.l.
Inventor： Enrico Rosario Alessi , Fabio Passaniti
CPC classification number: B81B7/007 , B81B7/02 , G06N3/08 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292
Abstract: An analysis method of a device through a MEMS sensor is provided in which the MEMS sensor includes a control unit and a sensing assembly coupled to the device. The analysis method includes acquiring, through the sensing assembly, first data indicative of an operative state of the device. Testing is performed for the presence of a first abnormal operating condition of the device. If the first abnormal operating condition of the device is confirmed, a self-test of the sensing assembly is performed to generate a quantity indicative of an operative state of the sensing assembly. The self-test includes acquiring, through the sensing assembly, second data indicative of the operative state of the sensing assembly, generating a signature according to the second data, and processing the signature through deep learning techniques to generate said quantity.
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公开(公告)号：US12006496B2
公开(公告)日：2024-06-11
申请号：US18141641
申请日：2023-05-01
Applicant: Purigen Biosystems, Inc.
Inventor： Lewis A. Marshall , Amy L. Hiddessen , Nathan P. Hoverter , Klint A. Rose , Juan G. Santiago
IPC: G01N27/453 , B01L3/00 , C12N15/10 , C12Q1/6806 , G01N27/447 , B81B1/00 , B81B7/00
CPC classification number: C12N15/101 , B01L3/502753 , C12N15/10 , C12Q1/6806 , G01N27/4473 , G01N27/44739 , G01N27/44791 , G01N27/44795 , B01L3/502738 , B01L2300/0627 , B01L2300/0867 , B81B1/004 , B81B7/0087 , B81B2201/0278 , B81B2201/05 , B81B2203/0338 , G01N27/44704 , C12N15/101 , C12Q2565/125
Abstract: The present disclosure relates to fluidic systems and devices for processing, extracting, or purifying one or more analytes. These systems and devices can be used for processing samples and extracting nucleic acids, for example by isotachophoresis. In particular, the systems and related methods can allow for extraction of nucleic acids, including non-crosslinked nucleic acids, from samples such as tissue or cells. The systems and devices can also be used for multiplex parallel sample processing.
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公开(公告)号：US11999612B2
公开(公告)日：2024-06-04
申请号：US17525950
申请日：2021-11-14
Applicant: Naiqian Han
Inventor： Naiqian Han
CPC classification number: B81B3/0021 , B81B3/0024 , G01J3/021 , G01J3/0218 , G01J3/10 , G01J3/45 , B81B2201/0264 , B81B2201/0271 , B81B2201/0278 , B81B2201/047 , G02B27/30
Abstract: Provided is an optical micro-electro-mechanical system (MEMS) based monitoring system, comprising: a broadband light source, a tunable optical filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, and a plurality of optical MEM sensors; the TOF is configured to capture a transmission, reflection or interference spectrum of the optical MEMS sensors; wherein the peak or depression wavelength in the transmission, reflection or interference spectrum corresponds to a parameter of the pressure, temperature or stress, and the peak or depression wavelength can be obtained by comparing the spectrum with the periodic spectrum of the optical etalon, the optical etalon has an absolute wavelength mark; and the optical MEMS sensor comprises an optical MEMS resonator. The parameter of the pressure, temperature or stress can be obtained by the peak or depression wavelength in the transmission, the reflection or the interference spectrum of the optical MEMS sensor.
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Patent Agency Ranking
公开(公告)号：US11897763B2
公开(公告)日：2024-02-13
申请号：US17103796
申请日：2020-11-24
Applicant: STMICROELECTRONICS, INC.
Inventor： Jefferson Sismundo Talledo
CPC classification number: B81C1/00309 , B81B7/0061 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/07 , B81C2201/0108 , B81C2201/0143 , B81C2201/0146
Abstract: A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.
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公开(公告)号：US20230251238A1
公开(公告)日：2023-08-10
申请号：US18170849
申请日：2023-02-17
Applicant: Brown University
Inventor： Jacob K. Rosenstein , Christopher Rose
CPC classification number: G01N33/0075 , B81B3/0018 , B81B2201/0278 , B81B2201/0264
Abstract: A system includes an array of chemical, pressure, and temperature sensors, and a temporal airflow modulator configured to provide sniffed vapors in a temporally-modulated sequence through a plurality of different air paths across multiple sensor locations.
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公开(公告)号：US20230235664A1
公开(公告)日：2023-07-27
申请号：US17582816
申请日：2022-01-24
Applicant: Schlumberger Technology Corporation
Inventor： Remi Robutel , Cleverson Souza Chaves , Mohamed Salim Cherchali , Claire Tassin , Nicolas Renoux
CPC classification number: E21B47/07 , B81B7/0074 , E21B47/01 , E21B47/12 , B81B2201/025 , B81B2201/0214 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292 , B81B2207/07 , B81B2207/091
Abstract: A downhole sensor system includes a first sensor package having a substrate, an integrated circuit chip mounted to the substrate, the integrated circuit chip including a processor, a transducer chip mounted to the integrated circuit chip, and a plurality of sensors configured to measure at least shock, pressure, temperature, and humidity. At least one of the plurality of sensors is mounted to the transducer chip such that a stack is formed at least from the substrate, the integrated circuit, the transducer chip, and the sensor. The plurality of sensors are in communication with the processor.
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59.发明公开公开(公告)号：US20230219804A1
公开(公告)日：2023-07-13
申请号：US18153795
申请日：2023-01-12
Applicant: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS , King Abdullah University of Science and Technology
Inventor： Xuecui ZOU , Sally AHMED , Hossein FARIBORZI , Nizar JABER
CPC classification number: B81B3/0021 , B81C1/00158 , B81B2201/0278 , B81B2203/0127 , B81B2203/0307 , B81B2203/0315 , B81B2203/04 , B81B2207/017 , B81C2201/0156 , B81C2201/0188
Abstract: A MEMS temperature sensor including a clamped-clamped microbeam having a drive electrode on one side configured for applying an AC current, and a sense electrode diagonally situated on the other side, a first anchor at one end and a second anchor at the other end of the microbeam. The first anchor receive a DC bias currents, which heats the microbeam to an operating temperature. The sense electrode is configured to capacitively sense oscillations in the microbeam due to an applied AC current. The MEMS temperature sensor has a three wafer construction in which the components are formed. The device is encapsulated by aluminum, and metal wires connect the first and second anchor, the drive electrode and the sense electrode to side electrode pads outside of the encapsulation. The MEMS temperature sensor has a linear operating region of 30-60 degrees Celsius.
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公开(公告)号：US11656128B2
公开(公告)日：2023-05-23
申请号：US17729884
申请日：2022-04-26
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Chin-Jou Kuo , Bor-Shiun Lee , Ming-Fa Chen
CPC classification number: G01J5/20 , B81B3/0072 , B81C1/00666 , B81B2201/0278 , B81B2203/04 , B81C2201/0104 , B81C2201/0107
Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.
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