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    Inductively Coupled Plasma Light Source with Direct Gas Injection
    51.
    发明公开
    Inductively Coupled Plasma Light Source with Direct Gas Injection 审中-公开

    公开(公告)号：US20240194454A1

    公开(公告)日：2024-06-13

    申请号：US18077270

    申请日：2022-12-08

    Applicant: Hamamatsu Photonics K.K. ,  Energetiq Technology, Inc.

    Inventor： Donald K. Smith ,  Stephen F. Horne ,  Michael J. Roderick ,  Kosuke Saito ,  Wolfram Neff

    IPC: H01J37/32 ,  H01J37/24

    CPC classification number: H01J37/32449 ,  H01J37/241 ,  H01J37/32623 ,  H01J37/32834

    Abstract: An ultraviolet light source with direct feed gas injection includes a chamber comprising a plasma confinement region and defining an aperture adjacent to the plasma confinement region that passes light generated by the plasma. A magnetic core is positioned around the plasma confinement region and is configured to generate a plurality of plasma current loops that converges in the plasma confinement region during operation. A feed gas injector is coupled to a gas port in the chamber and has an output that is positioned proximate to a boundary of the plasma confinement region so that the feed gas injector provides a feed gas to the plasma confinement region that creates a differential pressure in the plasma confinement region. A high voltage region is coupled to the plasma confinement region. An exhaust port is configured to be coupled to a pump that controls a pressure in the chamber.

    SIMPLE AND ENVIRONMENT-FRIENDLY PRODUCTION EQUIPMENT FOR CARBON NANOMATERIALS
    53.
    发明申请
    SIMPLE AND ENVIRONMENT-FRIENDLY PRODUCTION EQUIPMENT FOR CARBON NANOMATERIALS 审中-公开

    公开(公告)号：US20180366299A1

    公开(公告)日：2018-12-20

    申请号：US16112494

    申请日：2018-08-24

    Applicant: WORLD LINKAGE HOLDINGS LIMITED

    Inventor： Tsz Kin Ho

    IPC: H01J37/32 ,  H01J37/24 ,  H01J37/18

    CPC classification number: H01J37/32064 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  H01J37/185 ,  H01J37/241 ,  H01J37/32944

    Abstract: A simple and environment-friendly production equipment for carbon nano-materials includes a short-circuit generator and an AC/DC rectifier. A carbon nano vacuum device for producing the carbon nano-materials is connected with two output ends of the AC/DC rectifier. An alternate current is generated by the short-circuit generator and then is rectified into a direct-current power supply through the AC/DC rectifier to provide a power supply for a first graphite rod and a second graphite rod in the same direction, so as to generate a high-voltage electric arc at a junction of the first graphite rod and the second graphite rod, and plasma ionization is conducted on substances on the two graphite rods through the high-voltage electric arc, so that carbon atoms in the two graphite rods are decomposed, and carbon nano-materials are separated out and collected into a nano collector through a graphite cover.

    Method for matching the impedance of the output impedance of a high-frequency power supply arrangement to the impedance of a plasma load and high-frequency power supply arrangement
    56.
    发明授权
    Method for matching the impedance of the output impedance of a high-frequency power supply arrangement to the impedance of a plasma load and high-frequency power supply arrangement 有权
    将高频电源装置的输出阻抗的阻抗与等离子体负载和高频电源装置的阻抗进行匹配的方法

    公开(公告)号：US09111718B2

    公开(公告)日：2015-08-18

    申请号：US14087500

    申请日：2013-11-22

    Applicant: TRUMPF Huettinger GmbH + Co. KG

    Inventor： Rolf Merte

    IPC: H05B41/36 ,  H01J37/24 ,  H01J37/32 ,  H03H7/40 ,  H05H1/46

    CPC classification number: H01J37/241 ,  H01J37/32174 ,  H01J37/32183 ,  H03H7/40 ,  H05H1/46 ,  H05H2001/4682

    Abstract: A method for matching the impedance of the output impedance of a high-frequency power supply arrangement to the impedance of a plasma load includes, in a first impedance matching mode, matching the impedance of the output impedance of the high-frequency power supply arrangement by changing the frequency of the high-frequency signal produced. If the frequency is outside a specified frequency range, in a second impedance matching mode the impedance of the output impedance of the high-frequency power supply arrangement is matched by mechanically or electrically modifying a circuit which is arranged downstream of the high-frequency signal producer.

    Abstract translation: 将高频电源装置的输出阻抗的阻抗与等离子体负载的阻抗进行匹配的方法包括：在第一阻抗匹配模式中，将高频电源装置的输出阻抗的阻抗与 改变产生的高频信号的频率。 如果频率在指定频率范围之外，则在第二阻抗匹配模式中，高频电源装置的输出阻抗的阻抗通过机械地或电气地修改布置在高频信号产生器下游的电路来匹配 。

    X-RAY CT APPARATUS
    57.
    发明申请
    X-RAY CT APPARATUS 有权
    X射线CT装置

    公开(公告)号：US20140270055A1

    公开(公告)日：2014-09-18

    申请号：US14288753

    申请日：2014-05-28

    Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Medical Systems Corporation

    Inventor： Daizo OIKAWA ,  Fumio Ishiyama

    IPC: H05G1/30 ,  A61B6/03

    CPC classification number: H01J35/025 ,  A61B6/032 ,  A61B6/405 ,  A61B6/4241 ,  A61B6/54 ,  A61B6/542 ,  A61B6/58 ,  G05F1/10 ,  G05F1/565 ,  H01J37/241 ,  H01J37/248 ,  H01J37/3023 ,  H01J2237/2487 ,  H05G1/32 ,  H05G1/46

    Abstract: X-ray CT apparatus is provided in which the photon energy distribution of X-rays to be radiated is flattened. X-ray CT apparatus includes an X-ray tube, a detector, a data acquisition system, a tube voltage generator, and a grid controller. The X-ray tube radiates X-rays onto a subject. The detector includes multiple detection elements for detecting photons forming the X-rays. The data acquisition system counts the number of the detected photons to acquire projection data based on the counted photons. The tube voltage generator applies the tube voltage to the X-ray tube while changing the tube voltage of the X-ray tube in a predetermined cycle. A tube current controller decreases the tube current upon an increase in the tube voltage, and increases the tube current upon a decrease in the tube voltage. Thus, the photon energy distribution of the X-rays radiated from the X-ray tube is flattened.

    Abstract translation: 提供X射线CT装置，其中要辐射的X射线的光子能量分布变平。 X射线CT装置包括X射线管，检测器，数据采集系统，管电压发生器和电网控制器。 X射线管将X射线照射到被摄体上。 检测器包括用于检测形成X射线的光子的多个检测元件。 数据采集​​系统根据计数的光子计算检测到的光子数以获得投影数据。 管电压发生器将管电压施加到X射线管，同时以预定的周期改变X射线管的管电压。 管电流控制器在管电压增加时降低管电流，并且在管电压降低时增加管电流。 因此，从X射线管辐射的X射线的光子能量分布变平。

    Current limiter for high voltage power supply used with ion implantation system
    59.
    发明授权
    Current limiter for high voltage power supply used with ion implantation system 有权
    用于离子注入系统的高压电源限流器

    公开(公告)号：US08766209B2

    公开(公告)日：2014-07-01

    申请号：US13187905

    申请日：2011-07-21

    Applicant: Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

    Inventor： Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

    IPC: H01J27/00

    CPC classification number: H01J37/241 ,  H01J27/022 ,  H01J37/3171 ,  H01J2237/0203 ,  H01J2237/0206 ,  H02H9/02

    Abstract: Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.

    Abstract translation: 公开了一种用于离子源组件的浪涌保护系统。 该系统包括与热离子二极管和离子源组件串联耦合的高压电源。 高压电源封装在压力罐中并驱动离子源组件。 热离子二极管包括设置在离子源组件外壳和高压电源的输出之间的绝缘管，并且利用现有的离子源组件部件来限制离子源组件的电弧故障期间对电源的损坏。

    Reducing Glitching In An Ion Implanter
    60.
    发明申请
    Reducing Glitching In An Ion Implanter 有权
    减少在离子植入器中的毛刺

    公开(公告)号：US20140099430A1

    公开(公告)日：2014-04-10

    申请号：US14033642

    申请日：2013-09-23

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： William T. Levay ,  George M. Gammel ,  Bon-Woong Koo ,  Brant S. Binns ,  Richard M. White

    IPC: C23C14/48

    CPC classification number: C23C14/48 ,  C23C14/021 ,  C23C14/022 ,  C23C14/048 ,  C23C14/5826 ,  H01J37/241 ,  H01J37/243 ,  H01J37/248 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/0206 ,  H01J2237/24535 ,  H01L2224/81913

    Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.

    Abstract translation: 描述了降低离子注入机内毛刺率的方法。 在一个实施例中，执行等离子体辅助调理，其中对提取电极的偏压被修改以便抑制离子束的形成。 提供给离子源中的等离子体发生器的功率增加，从而产生不被提取电极提取的高密度等离子体。 该等离子体从离子源室延伸穿过提取孔。 能量离子然后调节萃取电极。 在另一个实施例中，执行等离子体辅助清洁。 在该模式中，提取电极进一步从离子源室移动，并且使用不同的源气体来产生等离子体。 在一些实施例中，使用这些模式的组合来减少离子注入机中的毛刺。

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