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    Laser Induced Plasma Micromachining (LIPMM)
    61.
    发明申请
    Laser Induced Plasma Micromachining (LIPMM) 有权
    激光诱导等离子体微加工（LIPMM）

    公开(公告)号：US20150294840A1

    公开(公告)日：2015-10-15

    申请号：US14681365

    申请日：2015-04-08

    Applicant: Northwestern University

    Inventor： Kumar Pallav ,  Rajiv Malhotra ,  Ishan Saxena ,  Kornel Ehmann ,  Jian Cao

    IPC: H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/32339 ,  B23K26/00 ,  H01J37/14 ,  H01J37/302 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32715 ,  H01J37/32926 ,  H01J2237/334 ,  H05H1/2475

    Abstract: A system for laser-induced plasma micromachining of a work-piece includes a dielectric fluid, a dielectric fluid supply device, a laser, a processor, and a memory. The dielectric fluid supply device is arranged to hold a work-piece in the dielectric fluid or to direct the dielectric fluid onto the work-piece. The laser is arranged to emit a pulsed laser-beam. The processor is in electronic communication with the laser. The memory is in electronic communication with the processor. The memory includes programming code for execution by the processor. The programming code is programmed to direct the laser to deliver the pulsed laser-beam into the dielectric fluid to create a plasma generated at a focal point of the pulsed laser-beam in the dielectric fluid to micromachine, using the plasma, the work-piece disposed adjacent to the focal point.

    Abstract translation: 用于工件的激光诱导等离子体微加工的系统包括介质流体，介电流体供应装置，激光器，处理器和存储器。 介电流体供应装置被布置成将工件保持在电介质流体中或将介电流体引导到工件上。 激光器被布置成发射脉冲激光束。 处理器与激光器进行电子通信。 存储器与处理器进行电子通信。 存储器包括用于由处理器执行的编程代码。 编程代码被编程为引导激光器将脉冲激光束传送到电介质流体中，以使用等离子体将工件中的脉冲激光束的介电流体中的脉冲激光束的焦点产生到微机械 设置在焦点附近。

    Automated ion beam idle
    63.
    发明授权
    Automated ion beam idle 有权
    自动离子束空闲

    公开(公告)号：US09123500B2

    公开(公告)日：2015-09-01

    申请号：US13436916

    申请日：2012-03-31

    Applicant: Tom Miller ,  Sean Kellogg ,  Jiri Zbranek

    Inventor： Tom Miller ,  Sean Kellogg ,  Jiri Zbranek

    IPC: H01J37/08 ,  H01J37/302 ,  H01J37/24 ,  H01J37/04

    CPC classification number: H01J37/08 ,  H01J37/045 ,  H01J37/243 ,  H01J37/302 ,  H01J2237/043 ,  H01J2237/0805 ,  H01J2237/0817 ,  H01J2237/30472 ,  H01J2237/31749

    Abstract: An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of when a charged particle beam system is idle (the beam itself is not in use) and then automatically reducing the beam current to a degree where little or no ion milling occurs at any aperture plane in the ion column. Preferred embodiments include a controller operable to modify voltage to an extractor electrode and/or to reduce voltage to a source electrode when idle state of an ion source of the charged particle beam system is detected.

    Abstract translation: 一种用于在离子束系统中关闭和还原离子束的改进的方法和装置。 优选实施例提供了一种用于改进聚焦离子束源的功率控制的系统，其利用对带电粒子束系统何时空闲（束本身不使用）的自动检测，然后自动将束电流减小至 在离子柱中的任何孔径平面处都发生很少或没有离子研磨。 优选的实施例包括可操作以在检测到带电粒子束系统的离子源的空闲状态时，将电压修改为提取器电极和/或降低对源电极的电压的控制器。

    Multi-energy ion implantation
    64.
    发明授权
    Multi-energy ion implantation 有权
    多能离子注入

    公开(公告)号：US09117629B2

    公开(公告)日：2015-08-25

    申请号：US14173776

    申请日：2014-02-05

    Applicant: Advanced Ion Beam Technology, Inc.

    Inventor： Zhimin Wan

    IPC: H01L21/425 ,  H01J37/317 ,  H01L21/265 ,  H01J37/302 ,  H01L29/66

    CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/66803

    Abstract: In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.

    Abstract translation: 在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。 可以使用离子源和提取组件产生具有第一能量的离子束。 可以跨电极组件施加第一电压。 离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。 可以在电极组件上施加第二电压。 离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。 第三能量可能与第二能量不同。

    Multi charged particle beam writing apparatus and multi charged particle beam writing method
    65.
    发明授权
    Multi charged particle beam writing apparatus and multi charged particle beam writing method 有权
    多带电粒子束写入装置和多带电粒子束写入方法

    公开(公告)号：US09076564B2

    公开(公告)日：2015-07-07

    申请号：US14256124

    申请日：2014-04-18

    Applicant: NuFlare Technology, Inc.

    Inventor： Ryoichi Yoshikawa ,  Munehiro Ogasawara

    IPC: G03F7/20 ,  H01J37/302 ,  G21K5/04 ,  G21K5/10 ,  H01J37/317 ,  H01J37/304 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: G21K5/04 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  G03F7/2065 ,  G21K5/10 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  Y10S430/143

    Abstract: A multi charged particle beam writing apparatus according to an embodiment, includes a setting unit to set a second region such that more openings in remaining openings except for an opening through which the defective beam passes are included in the second region, a selection unit to select a mode from a first mode in which a pattern is written on a target object by using multiple beams having passed openings in the second region and a second mode in which multiple writing is performed while shifting a position by using at least one of remaining multiple beams in the state where the defective beam is controlled to be beam off and additional writing is performed for a position which was supposed to be written by the defective beam, and a writing processing control unit to control to write in the mode selected.

    Abstract translation: 根据实施例的多带电粒子束写入装置包括设置单元，用于设置第二区域，使得除了缺陷光束通过的开口之外的剩余开口中的更多开口包括在第二区域中，选择单元选择 通过使用在第二区域中通过的开口的多个光束将图案写在目标物体上的第一模式的模式以及通过使用剩余多个光束中的至少一个来移动位置的同时进行多次写入的第二模式 在有缺陷的光束被控制为光束关闭的状态下，并且对于应该由缺陷光束写入的位置执行附加写入;以及写入处理控制单元，用于控制以所选择的模式写入。

    METHODS FOR USING ISOTOPICALLY ENRICHED LEVELS OF DOPANT GAS COMPOSITIONS IN AN ION IMPLANTATION PROCESS
    68.
    发明申请
    METHODS FOR USING ISOTOPICALLY ENRICHED LEVELS OF DOPANT GAS COMPOSITIONS IN AN ION IMPLANTATION PROCESS 有权
    在离子植入过程中使用同位素浓度多种气体组合物的方法

    公开(公告)号：US20140322902A1

    公开(公告)日：2014-10-30

    申请号：US13869456

    申请日：2013-04-24

    Applicant: Ashwini K. Sinha ,  Ching I. Li

    Inventor： Ashwini K. Sinha ,  Ching I. Li

    IPC: H01L21/265 ,  H01J27/02

    CPC classification number: H01J27/02 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/26506 ,  H01L21/2658

    Abstract: A novel process for using enriched and highly enriched dopant gases is provided herein that eliminates the problems currently encountered by end-users from being able to realize the process benefits associated with ion implanting such dopant gases. For a given flow rate within a prescribed range, operating at a reduced total power level of the ion source is designed to reduce the ionization efficiency of the enriched dopant gas compared to that of its corresponding non-enriched or lesser enriched dopant gas. The temperature of the source filament is also reduced, thereby mitigating the adverse effects of fluorine etching and ion source shorting when a fluorine-containing enriched dopant gas is utilized. The reduced levels of total power in combination with a lower ionization efficiency and lower ion source temperature can interact synergistically to improve and extend ion source life, while beneficially maintaining a beam current that does not unacceptably deviate from previously qualified levels.

    Abstract translation: 本文提供了一种使用富集和高度富集的掺杂气体的新方法，其消除了终端用户目前遇到的问题，即能够实现与离子注入这种掺杂气体相关的工艺优点。 对于规定范围内的给定流速，在离子源的总功率水平降低的情况下操作，以减少富集的掺杂气体与其相应的非富集或较小浓度的掺杂气体相比的离子化效率。 源极丝的温度也降低，从而在使用富含氟的掺杂气体时减轻氟蚀刻和离子源短路的不利影响。 总功率的降低水平与较低的离子化效率和较低的离子源温度相结合可以相互协调地相互作用，以改善和延长离子源寿命，同时有利地保持不能接受地偏离先前合格水平的束流。

    MULTI-ENERGY ION IMPLANTATION
    69.
    发明申请
    MULTI-ENERGY ION IMPLANTATION 有权
    多功能离子植入

    公开(公告)号：US20140151573A1

    公开(公告)日：2014-06-05

    申请号：US14173776

    申请日：2014-02-05

    Applicant: Advanced Ion Beam Technology, Inc.

    Inventor： Zhimin Wan

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/66803

    Abstract: In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.

    Abstract translation: 在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。 可以使用离子源和提取组件产生具有第一能量的离子束。 可以跨电极组件施加第一电压。 离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。 可以在电极组件上施加第二电压。 离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。 第三能量可能与第二能量不同。

    Multi charged particle beam writing apparatus and multi charged particle beam writing method
    70.
    发明授权
    Multi charged particle beam writing apparatus and multi charged particle beam writing method 有权
    多带电粒子束写入装置和多带电粒子束写入方法

    公开(公告)号：US08741547B2

    公开(公告)日：2014-06-03

    申请号：US13706908

    申请日：2012-12-06

    Applicant: NuFlare Technology, Inc.

    Inventor： Ryoichi Yoshikawa ,  Munehiro Ogasawara

    IPC: G03F7/20 ,  H01J37/302

    CPC classification number: G21K5/04 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  G03F7/2065 ,  G21K5/10 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  Y10S430/143

    Abstract: A multi charged particle beam writing apparatus according to an embodiment, includes a setting unit to set a second region such that more openings in remaining openings except for an opening through which the defective beam passes are included in the second region, a selection unit to select a mode from a first mode in which a pattern is written on a target object by using multiple beams having passed openings in the second region and a second mode in which multiple writing is performed while shifting a position by using at least one of remaining multiple beams in the state where the defective beam is controlled to be beam off and additional writing is performed for a position which was supposed to be written by the defective beam, and a writing processing control unit to control to write in the mode selected.

    Abstract translation: 根据实施例的多带电粒子束写入装置包括设置单元，用于设置第二区域，使得除了缺陷光束通过的开口之外的剩余开口中的更多开口包括在第二区域中，选择单元选择 通过使用在第二区域中通过的开口的多个光束将图案写在目标物体上的第一模式的模式以及通过使用剩余多个光束中的至少一个来移动位置的同时进行多次写入的第二模式 在有缺陷的光束被控制为光束关闭的状态下，并且对于应该由缺陷光束写入的位置执行附加写入;以及写入处理控制单元，用于控制以所选择的模式写入。

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