公开(公告)号：US20240153750A1

公开(公告)日：2024-05-09

申请号：US18408313

申请日：2024-01-09

Applicant: Applied Materials, Inc.

Inventor： Tina Dhekial-Phukan ,  Michael Nichols

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01J37/32816 ,  C23C16/45557 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32926 ,  H01J37/32981 ,  H01L21/67253

Abstract: System and methods of improving dynamic pressure response during recipe step transitions. An exemplary method may include changing at least one of a plurality of recipe parameters in accordance with a processing recipe while running the processing recipe on a semiconductor substrate in a processing chamber. The method may further include measuring a pressure response in the processing chamber responsive to the changing of the at least one of the plurality of recipe parameters, and determining a response error based on the pressure response and a model pressure response calculated based on the processing recipe. The method may further include, in response to determining that the response error may be greater than a threshold value, calculating an adjustment to an operation of a valve downstream of the processing chamber when changing the at least one of the plurality of recipe parameters in accordance with the processing recipe in subsequent runs.

公开(公告)号：US20240153744A1

公开(公告)日：2024-05-09

申请号：US18386618

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Atsushi TAKAHASHI ,  Maju TOMURA ,  Ryo MATSUBARA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32816 ,  H01J2237/3341

Abstract: An etching method includes: (a) providing a substrate having an etching target film and a mask on the etching target film to a substrate support in a plasma processing apparatus including a chamber, the substrate support, a plasma generator supplied with source power, and a bias electrode supplied with bias power; and (b) forming a recess by etching the etching target film. In (b), the source power and the bias power are periodically supplied in a cycle that includes a first period and a second period. In the first period, the etching target film is etched, and in the second period, the second processing gas is adsorbed onto the etching target film.

公开(公告)号：US20240128056A1

公开(公告)日：2024-04-18

申请号：US18133277

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeontae Kim ,  Changho Kim ,  Yoonbum Nam ,  Seungbo Shim ,  Minyoung Hur ,  Kyungsun Kim ,  Juneeok Leem

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32568 ,  H01J37/32816 ,  H01J2237/334

Abstract: The present disclosure provides plasma etching apparatuses and operating methods of the plasma etching apparatuses. In some embodiments, a plasma etching apparatus includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The processing chamber is configured to receive etching gas, and to etch a wafer using plasma that has been formed according to a plasma source pulse and a bias pulse. The a plasma source generator is configured to generate the plasma source pulse. The bias generator is configured to generate the bias pulse. The acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma.

公开(公告)号：US11961773B2

公开(公告)日：2024-04-16

申请号：US17261782

申请日：2019-07-17

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： Ligang Deng ,  Katie Hore

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/66 ,  H01S5/20 ,  H01L31/18 ,  H01L33/00 ,  H01S5/183 ,  H01S5/30

CPC classification number: H01L22/26 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/308 ,  H01S5/2086 ,  H01J2237/334 ,  H01L31/1828 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/0083 ,  H01S5/183 ,  H01S5/3013

Abstract: A method of etching into a one or more epitaxial layers of respective semiconductor material(s) in a vertical cavity surface emitting laser (VCSEL) semiconductor structure, wherein the or each semiconductor material is a III-V semiconductor material, a III-N semiconductor material, or a II-VI semiconductor material is disclosed. The method comprises placing a substrate having the semiconductor structure thereon onto a support table in a plasma processing chamber, the semiconductor structure carrying a patterned mask on the surface of the semiconductor structure distal from the support table. The method also includes process steps of establishing a flow of an etch gas mixture through the plasma processing chamber and generating a plasma within the plasma processing chamber and simultaneously applying a radio frequency (RF) bias voltage to the support table; whereby the portion(s) of the semiconductor structure not covered by the patterned mask are exposed to the etch gas mixture plasma and are thereby etched to form at least one feature in the semiconductor structure; wherein more than 90% of the etch gas mixture consists of a mixture of silicon tetrachloride (SiCl4) and nitrogen (N2).

公开(公告)号：US20240120183A1

公开(公告)日：2024-04-11

申请号：US18263920

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Hiroki YAMADA

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/455 ,  C23C16/511 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32816 ,  C23C16/26 ,  C23C16/45557 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32743 ,  H01L21/02115 ,  H01L21/02274 ,  H01J37/32192 ,  H01J2237/182 ,  H01J2237/332

Abstract: A substrate processing method of processing a substrate includes: a carry-in process of carrying the substrate into a processing container; a first process of forming a first carbon film on the substrate with plasma of a first mixture gas containing a carbon-containing gas in a state in which interior of the processing container is maintained at a first pressure; and a second process of changing a pressure in the processing container to a second pressure higher than the first pressure.

公开(公告)号：US11935776B2

公开(公告)日：2024-03-19

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/683 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L22/26 ,  H01J2237/334 ,  H01L21/68785

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

公开(公告)号：US20240035195A1

公开(公告)日：2024-02-01

申请号：US18226007

申请日：2023-07-25

Applicant: Applied Materials, Inc.

Inventor： Qinghua ZHAO ,  Rui CHENG ,  Dimitrios PAVLOPOULOS ,  Karthik JANAKIRAMAN

IPC: C30B25/16 ,  H01L21/02 ,  H01J37/32 ,  C30B29/06 ,  C30B29/52 ,  C30B25/10 ,  C23C16/06 ,  C23C16/24 ,  C23C16/46 ,  C23C16/507 ,  C23C16/52

CPC classification number: C30B25/165 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01J37/32816 ,  H01J37/32724 ,  H01J37/32449 ,  C30B29/06 ,  C30B29/52 ,  C30B25/10 ,  C23C16/06 ,  C23C16/24 ,  C23C16/46 ,  C23C16/507 ,  C23C16/52 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/182

Abstract: Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having single crystalline structures. In one implementation, a method of processing substrates includes positioning a substrate in a processing volume of a chamber, and heating the substrate to a substrate temperature that is 800 degrees Celsius or less. The method includes maintaining the processing volume at a pressure within a range of 1.0 Torr to 8.0 Torr, and flowing one or more silicon-containing gases and one or more diluent gases into the processing volume. The method includes reacting the one or more silicon-containing gases to form one or more reactants, and depositing the one or more reactants onto an exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. The one or more silicon-containing layers each having a single crystalline structure.

公开(公告)号：US20230323529A1

公开(公告)日：2023-10-12

申请号：US18016328

申请日：2021-07-09

Applicant: RHEINISCH-WESTFÄLISCHE TECHNISCHE HOCHSCHULE (RWTH) AACHEN KÖRPERSCHAFT DES ÖFFENTLICHEN RECHTS

Inventor： Montgomery JARITZ

IPC: C23C16/04 ,  C23C16/511 ,  C23C16/52 ,  C23C16/40 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/511 ,  C23C16/52 ,  C23C16/401 ,  H01J37/32816 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/1825 ,  H01J37/32192 ,  H01J2237/24578

Abstract: Apparatus and method for outer wall and/or inner wall coating of hollow bodies made of an electrically nonconductive material in which the hollow body is inserted into a process chamber which is divided by the hollow body into an internal and external reaction space, wherein at least one process gas is introduced into one of the two reaction spaces under a process pressure, and a plasma is generated in the reaction space and fragments and/or reaction products formed in the plasma from the at least one process gas are deposited to form a layer on the side of the wall of the hollow body that faces the plasma, the plasma being influenced with regard to at least one operating parameter by a magnetic field that permeates the two reaction spaces.

公开(公告)号：US11761079B2

公开(公告)日：2023-09-19

申请号：US16770526

申请日：2018-12-06

Applicant: Lam Research Corporation

Inventor： Fengyuan Lai ,  Bo Gong ,  Guangbi Yuan ,  Chen-Hua Hsu ,  Bhadri Varadarajan

IPC: C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/505 ,  H01L21/02 ,  H01J37/32

CPC classification number: C23C16/401 ,  C23C16/4404 ,  C23C16/45536 ,  C23C16/505 ,  H01L21/0262 ,  H01J37/32522 ,  H01J37/32816

Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

公开(公告)号：US20230245871A1

公开(公告)日：2023-08-03

申请号：US18103609

申请日：2023-01-31

Applicant: Tokyo Electron Limited

Inventor： Hiroshi NAGAIKE ,  Naoki SATO ,  Masato OBARA ,  Hideyuki OSADA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  B08B6/00 ,  B08B13/00 ,  B25J15/06

CPC classification number: H01J37/32871 ,  H01L21/67167 ,  H01L21/68707 ,  H01J37/32816 ,  B08B6/00 ,  B08B13/00 ,  B25J15/0616 ,  H01J2237/022 ,  H01J2237/184

Abstract: A substrate processing system includes a vacuum transfer module, a substrate processing module, an atmospheric transfer module, a load-lock module, at least one substrate transfer robot disposed in the vacuum transfer module and the atmospheric transfer module, and having at least one end effector, and a controller configured to control a particle removal operation. The particle removal operation includes transferring said at least one end effector in any one of the vacuum transfer module, the substrate processing module, the load-lock module, and the atmospheric transfer module in a state where at least one charging member that is charged is placed on said at least one end effector.