Abstract:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
Abstract:
An electron beam device for inspecting a target substrate or specimen thereon includes a beam separator with an asymmetric quadrupole electrostatic deflector for improving field uniformity for a single direction of deflection. The asymmetric quadrupole electrostatic deflector includes two orthogonal electrode plates spanning roughly 60 degrees and two electrode plates spanning roughly 120 degrees, the two latter plates defining a unidirectional deflection field. The device generates a primary electron beam and focuses the primary electron beam along an optical axis into the target substrate. Secondary electrons detected at the target substrate are focused into a secondary electron beam. The beam separator with asymmetric quadrupole electrostatic deflector deflects the secondary electron beam away from the axis of the primary electron beam in the direction of deflection and into a detector array.
Abstract:
A preferred aim of the present invention is to provide a charged particle beam device having a high differential exhaust performance while maintaining a large dynamic range of an irradiation current by effectively arranging an aperture for differential pumping (111) and an objective final aperture (110). The present invention has features that a lens barrel including therein an optical system of the charged particle beam device (100) includes a first space (106) having a first degree of vacuum and a second space (105) having a degree of vacuum higher than the first degree of vacuum, and that the objective final aperture (110) is arranged in the second space (105).
Abstract:
The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.
Abstract:
A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap (G), a particle optics configured for separating the signal beam into a first portion of the signal beam and into at least one second portion of the signal beam, and configured for focusing the first portion of the signal beam and the at least one second portion of the signal beam. The particle optics includes an aperture plate and at least a first inner aperture openings in the aperture plate, and at least one second radially outer aperture opening in the aperture plate, wherein the first aperture opening has a concave shaped portion, particularly wherein the first aperture opening has a pincushion shape.
Abstract:
A charged-particle beam lens includes a plate-like anode, a plate-like cathode, and an insulator disposed between the anode and the cathode. The insulator, the anode, and the cathode have a passage portion through which a charged beam is passed. A high-resistance film is formed on an inner side of the insulator, the inner side forming the passage portion, or an outermost side of insulator, and the anode and the cathode are electrically connected together via the high-resistance film. The anode and the high-resistance film, and the cathode and the high-resistance film each contain the same metal or semiconductor element and have different resistant values. This suppresses electric field concentration due to an increase in resistance and poor connection at the interface between the anode and the cathode and the high-resistance film or at the interface between the electroconductive film and the high-resistance film, thus suppressing generation of discharge.
Abstract:
The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.
Abstract:
The invention relates to an in-column back-scattered electron detector, the detector placed in a combined electrostatic/magnetic objective lens for a SEM. The detector is formed as a charged particle sensitive surface, preferably a scintillator disk that acts as one of the electrode faces forming the electrostatic focusing field. The photons generated in the scintillator are detected by a photon detector, such as a photo-diode or a multi-pixel photon detector. The objective lens may be equipped with another electron detector for detecting secondary electrons that are kept closer to the axis. A light guide may be used to offer electrical insulation between the photon detector and the scintillator.
Abstract:
A particle beam system comprises a particle beam source 5 for generating a primary particle beam 13, an objective lens 19 for focusing the primary particle beam 13 in an object plane 23; a particle detector 17; and an X-ray detector 47 arranged between the objective lens and the object plane. The X-ray detector comprises plural semiconductor detectors, each having a detection surface 51 oriented towards the object plane. A membrane is disposed between the object plane and the detection surface of the semiconductor detector, wherein different semiconductor detectors have different membranes located in front, the different membranes differing with respect to a secondary electron transmittance.
Abstract:
A charged particle beam emitting device includes at least two charged particle beam guns, each of the at least two charged particle beam guns having a separate charged particle emitter with an emitting surface for emitting a respective charged particle beam. The charged particle beam emitting device further includes an aperture element comprising at least one aperture opening and a deflector unit. The deflector unit is adapted for alternatively directing the charged particle beams of the at least two charged particle beam guns on the at least one aperture opening so that, at the same time, one of the at least two charged particle beams is directed on the aperture opening while the respective other charged particle beam of the at least two charged particle beams is deflected from the aperture opening by the deflector unit. At the same time, only one of the two charged particle beam guns is used so that the temporarily unused charged particle beam gun can be subjected to a cleaning procedure. This ensures that the emitting surfaces of both charged particle beam guns can be alternatively and frequently cleaned with minimum interruption of the operation of the charged particle beam device.