公开(公告)号：US20150102377A1

公开(公告)日：2015-04-16

申请号：US14513215

申请日：2014-10-14

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Shao-Ying Ting ,  Chih-Ling Wu ,  Kuan-Yung Liao ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/36

CPC classification number: H01L33/505 ,  H01L33/486 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.

Abstract translation: 倒装芯片发光二极管封装结构包括封装载体，导光单元和至少一个发光单元。 导光单元和发光单元设置在封装载体上，并且发光单元位于导光单元和封装载体之间。 导光单元的水平投影区域大于发光单元的水平投影区域。 发光单元适于发射光束，并且光束进入导光单元并且从导光单元的上表面离开发光单元发射。

公开(公告)号：US11508877B2

公开(公告)日：2022-11-22

申请号：US16826298

申请日：2020-03-23

Applicant: Genesis Photonics Inc.

Inventor： Tung-Lin Chuang ,  Yi-Ru Huang ,  Yu-Chen Kuo ,  Chih-Ming Shen ,  Tsung-Syun Huang ,  Jing-En Huang

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/10

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.

公开(公告)号：US20200006419A1

公开(公告)日：2020-01-02

申请号：US16564053

申请日：2019-09-09

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L27/15

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

公开(公告)号：US20190312176A1

公开(公告)日：2019-10-10

申请号：US16443832

申请日：2019-06-17

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/38

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

公开(公告)号：US10396255B2

公开(公告)日：2019-08-27

申请号：US15823480

申请日：2017-11-27

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

公开(公告)号：US20190237627A1

公开(公告)日：2019-08-01

申请号：US16384871

申请日：2019-04-15

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/42

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

公开(公告)号：US20190088819A1

公开(公告)日：2019-03-21

申请号：US16195812

申请日：2018-11-19

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/08 ,  H01L33/44 ,  H01L33/38 ,  H01L33/20 ,  H01L27/15 ,  H01L33/00 ,  H01L25/075 ,  H01L33/62 ,  H01L33/06

CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

公开(公告)号：US10177272B2

公开(公告)日：2019-01-08

申请号：US15670050

申请日：2017-08-07

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Jing-En Huang

IPC: H01L21/683 ,  H01L23/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

Abstract: A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.

公开(公告)号：US20180337310A1

公开(公告)日：2018-11-22

申请号：US16049771

申请日：2018-07-30

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/38

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

公开(公告)号：US10050081B2

公开(公告)日：2018-08-14

申请号：US15135584

申请日：2016-04-22

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/20

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.