公开(公告)号：BR8801160A

公开(公告)日：1988-10-18

申请号：BR8801160

申请日：1988-03-15

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  FRECHET JEAN M J ,  TWIEG ROBERT JAMES ,  WILLSON CARLTON GRANT

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  C08F2/46

Abstract: Heat stable, negative resist compositions are provided for use, particularly in deep ultraviolet light x-ray and electron beams. The composition comprises an acid generting onium salt photoinitiator, a source of polyfunctional activated aromatic rings and a source of polyfunctional carbonium ions, with at least one of said sources being a polymer.

公开(公告)号：DE3382809T2

公开(公告)日：1997-04-03

申请号：DE3382809

申请日：1983-05-02

Applicant: IBM

Inventor： ITO HIROSHI ,  WILLSON CARLTON GRANT ,  FRECHET JEAN M J

IPC: C08K5/00 ,  C08F8/00 ,  C08L33/00 ,  C08L33/02 ,  G03F7/004 ,  G03F7/021 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027

公开(公告)号：DE69301999T2

公开(公告)日：1996-10-10

申请号：DE69301999

申请日：1993-11-22

Applicant: IBM

Inventor： CAMERON JAMES FIELD ,  FRECHET JEAN M J ,  LEUNG MAN-KIT ,  NIESERT CLAUS-PETER ,  MACDONALD SCOTT ARTHUR ,  WILLSON CARLTON GRANT

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Provided is an improved lithographic photoresist composition comprising a photosensitive base generator. The composition is useful in the manufacture of integrated circuits.

公开(公告)号：DE3382401D1

公开(公告)日：1991-10-10

申请号：DE3382401

申请日：1983-05-02

Applicant: IBM

Inventor： ITO HIROSHI ,  WILLSON CARLTON GRANT ,  FRECHET JEAN M J

IPC: C08K5/00 ,  C08F8/00 ,  C08L33/00 ,  C08L33/02 ,  G03F7/004 ,  G03F7/021 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  G03F7/16 ,  G03F7/029

公开(公告)号：ES2019413B3

公开(公告)日：1991-06-16

申请号：ES88101849

申请日：1988-02-09

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  FRECHET JEAN M J ,  TWIEG ROBERT JAMES ,  WILLSON CARLTON GRANT

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

公开(公告)号：DE3382809D1

公开(公告)日：1996-10-10

申请号：DE3382809

申请日：1983-05-02

Applicant: IBM

Inventor： ITO HIROSHI ,  WILLSON CARLTON GRANT ,  FRECHET JEAN M J

IPC: C08K5/00 ,  C08F8/00 ,  C08L33/00 ,  C08L33/02 ,  G03F7/004 ,  G03F7/021 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027

公开(公告)号：CA1308594C

公开(公告)日：1992-10-13

申请号：CA542534

申请日：1987-07-20

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021

公开(公告)号：DE3861251D1

公开(公告)日：1991-01-24

申请号：DE3861251

申请日：1988-02-09

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  FRECHET JEAN M J ,  TWIEG ROBERT JAMES ,  WILLSON CARLTON GRANT

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Heat stable, negative resist compositions are provided for use, particularly in deep ultraviolet light x-ray and electron beams. The composition comprises an acid generting onium salt photoinitiator, a source of polyfunctional activated aromatic rings and a source of polyfunctional carbonium ions, with at least one of said sources being a polymer.

公开(公告)号：DE69301999D1

公开(公告)日：1996-05-02

申请号：DE69301999

申请日：1993-11-22

Applicant: IBM

Inventor： CAMERON JAMES FIELD ,  FRECHET JEAN M J ,  LEUNG MAN-KIT ,  NIESERT CLAUS-PETER ,  MACDONALD SCOTT ARTHUR ,  WILLSON CARLTON GRANT

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Provided is an improved lithographic photoresist composition comprising a photosensitive base generator. The composition is useful in the manufacture of integrated circuits.

公开(公告)号：CA1325353C

公开(公告)日：1993-12-21

申请号：CA557770

申请日：1988-01-29

Applicant: IBM

Inventor： ALLEN ROBERT D ,  FRECHET JEAN M J ,  TWIEG ROBERT J ,  WILLSON CARLTON G

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: of the Invention NEGATIVE RESIST COMPOSITIONS Heat stable, negative resist compositions are provided for use, particularly in deep ultraviolet light x-ray and electron beams. The composition comprises an acid generating onium salt photoinitiator, a source of polyfunctional activated aromatic rings and a source of polyfunctional carbonium ions, with at least one of said sources being a polymer.