中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.017 seconds)

    RESIST COMPOSITION AND USE THEREOF
    2.
    发明专利
    RESIST COMPOSITION AND USE THEREOF 失效

    公开(公告)号：JP2001066767A

    公开(公告)日：2001-03-16

    申请号：JP2000209547

    申请日：2000-07-11

    Applicant: IBM

    Inventor： ANGELOPOULOS MARIE ,  ARI AVIRAMU ,  EDWARD D BAABICHI ,  TIMOTHY ARAN BRANNER ,  THOMAS BENJAMIN FAURE ,  C RICHARD GUARNIERI ,  KWONG RANEE W ,  PETRILLO KAREN E

    IPC: G03F1/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To obtain a resist composition, having responsiveness to imaging irradiation and enhanced resistance to reactive ion etching by incorporating a radiation sensitive polymer and an organometallic compound of a specified metal. SOLUTION: This resist composition contains a radiation responsive polymer and an organometallic compound of a metal selected from among the group comprising yttrium, aluminum, iron, titanium, zirconium, hafnium and a mixture of these. The organometallic compound is, e.g. yttrium trishexafluoroacetylacetonate or yttrium tris(2,2,6,6-tetramethyl)-3,5-heptanedioate and the amount of the organometallic compound used is about 0.1-25 wt.% of the weight of the radiation sensitive polymer. The organometallic compound may be used in combination with various resist polymers including a chemically amplified resist and a non-chemically amplified resist.

    LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM
    3.
    发明申请
    LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM 审中-公开
    低活化能含硅抗蚀剂体系

    公开(公告)号：WO2005040918A3

    公开(公告)日：2005-12-15

    申请号：PCT/US2004035253

    申请日：2004-10-22

    Applicant: IBM ,  HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

    Inventor： HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

    IPC: G03C1/76 ,  G03F20060101 ,  G03F7/004 ,  G03F7/075

    CPC classification number: G03F7/0757 ,  G03F7/0045 ,  G03F7/0046

    Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193nm and 157nm.

    Abstract translation: 提供了本发明的倍半硅氧烷聚合物，并且提供了包含这种倍半硅氧烷聚合物的抗蚀剂组合物，其中所述倍半硅氧烷聚合物的至少一部分含有氟化部分，并且所述倍半硅氧烷聚合物的至少一部分含有悬挂溶解度抑制酸不稳定部分， 用于酸催化裂解的活化能以及高光密度部分的存在被最小化或避免。 本发明的聚合物还含有促进抗蚀剂在碱性水溶液中的碱溶性的侧链极性部分。 本发明的聚合物在正型抗蚀剂组合物中特别有用。 本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长产生高分辨率图像。

    Silicon-containing resist system with cyclic ketal protecting group
    6.
    发明专利
    Silicon-containing resist system with cyclic ketal protecting group 审中-公开
    具有循环保护组的含硅电阻系统

    公开(公告)号：JP2005148752A

    公开(公告)日：2005-06-09

    申请号：JP2004332288

    申请日：2004-11-16

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

    IPC: G03F7/039 ,  C08G77/22 ,  G03C1/492 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F7/094 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0757

    Abstract: PROBLEM TO BE SOLVED: To provide silsesquioxane polymers and photoresist compositions that contain such silsesquioxane polymers.
    SOLUTION: At least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silsesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive photoresist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g., bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供含有这种倍半硅氧烷聚合物的倍半硅氧烷聚合物和光致抗蚀剂组合物。 解决方案：至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分倍半硅氧烷聚合物含有对酸催化裂解具有低活化能的侧链溶解性抑制性环状缩酮酸不稳定部分。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物特别可用于正性光致抗蚀剂组合物。 本发明包括使用这种光致抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如，双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。 版权所有（C）2005，JPO＆NCIPI

Patent Agency Ranking