公开(公告)号：CA1248641A

公开(公告)日：1989-01-10

申请号：CA514222

申请日：1986-07-21

Applicant: IBM

Inventor： CHOW MELANIE M ,  CRONIN JOHN E ,  GUTHRIE WILLIAM L ,  KAANTA CARTER W ,  LUTHER BARBARA J ,  PATRICK WILLIAM J ,  PERRY KATHLEEN A ,  STANDLEY CHARLES L

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/72

Abstract: Patterned conductive lines are formed simultaneously with stud via connections through an insulation layer to previously formed underlying patterned conductive lines in multilevel VLSI chip technology. A first planarized layer of insulation is deposited over a first level of patterned conductive material to which contacts are to be selectively established. The first layer then is covered by an etch stop material. Contact holes are defined in the etch stop material at locations where stud connectors are required. The first layer of insulation is not etched at this time. Next, a second planarized layer of insulation, is deposited over the etch stop material. The second layer insulation, in turn, is etched by photolithography down to the etch stop material to define desired wiring channels, some of which will be in alignment with the previously formed contact holes in the etch stop material. In those locations where the contact holes are exposed, the etching is continued into the first layer of insulation to uncover the underlying first level of patterned conductive material. The channels and via holes are overfilled with metallization. The excess metallization is removed by etching or by chem-mech (chemical-mechanical) polishing.

公开(公告)号：CA2011709C

公开(公告)日：1993-12-21

申请号：CA2011709

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY W ,  DAVID LAWRENCE D ,  GUTHRIE WILLIAM L ,  KAUFMAN FRANK B ,  PATRICK WILLIAM J ,  RODBELL KENNETH P

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  C23F1/44 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：FR2328509A1

公开(公告)日：1977-05-20

申请号：FR7623756

申请日：1976-07-28

Applicant: IBM

Inventor： PATRICK WILLIAM J ,  WESTDORP WOLFGANG A

IPC: C01B33/02 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/208 ,  B01J17/00

公开(公告)号：CA1228268A

公开(公告)日：1987-10-20

申请号：CA509774

申请日：1986-05-22

Applicant: IBM

Inventor： BARBEE STEVEN G ,  DEVINE GREGORY P ,  PATRICK WILLIAM J ,  SEELEY GERARD

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  C23C14/54

Abstract: FI9-83-093 VACUUM DEPOSITION SYSTEM WITH IMPROVED MASS FLOW CONTROL A system and method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gaseous material from the reservoir to the reactor. The mass flow rate of the gas from the reservoir is held constant by precisely controlling the pressure at the outlet of the reservoir and at the inlet of the reactor. In one embodiment the upstream pressure is controlled by a valve responsive to a pressure sensor at the reservoir outlet, and the downstream pressure is controlled by adjusting the vacuum in the reactor as measured by a pressure sensor at the reactor inlet. A vacuum bypass line around the reactor is provided to stabilize the upstream pressure prior to admitting the gas to the reactor when a deposition cycle is commenced, and the connection between the reservoir and the reactor, and the flow control valves and pressure sensors in the flow path are maintained at a temperature sufficient to prevent condensation of the vapor downstream of the reservoir.

公开(公告)号：FR2312816A1

公开(公告)日：1976-12-24

申请号：FR7610161

申请日：1976-04-01

Applicant: IBM

Inventor： PATRICK WILLIAM J ,  SCILLA SALVATORE J ,  WESTDORP WOLFGANG A

IPC: C01B33/02 ,  C01B33/021 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06 ,  H01L21/208 ,  G05D11/00 ,  B01J17/20

公开(公告)号：CA1245517A

公开(公告)日：1988-11-29

申请号：CA509373

申请日：1986-05-16

Applicant: IBM

Inventor： BEYER KLAUS D ,  GUTHRIE WILLIAM L ,  MAKAREWICZ STANLEY R ,  MENDEL ERIC ,  PATRICK WILLIAM J ,  PERRY KATHLEEN A ,  PLISKIN WILLIAM A ,  RISEMAN JACOB ,  SCHAIBLE PAUL M ,  STANDLEY CHARLES L

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306

Abstract: A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier. In a second example a substrate having a paterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

公开(公告)号：CA1067800A

公开(公告)日：1979-12-11

申请号：CA263823

申请日：1976-10-20

Applicant: IBM

Inventor： PATRICK WILLIAM J ,  WESTDORP WOLFGANG A

IPC: C01B33/02 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/208 ,  B01J17/18

Abstract: CONTROL OF OXYGEN IN SILICON CRYSTALS The seed to tail oxygen concentration gradient in silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by a process employing stop-go crucible rotation to provide fluid shearing at the melt-crucible interface.