公开(公告)号：DE69024263D1

公开(公告)日：1996-02-01

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：AT50379T

公开(公告)日：1990-02-15

申请号：AT86114396

申请日：1986-10-17

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/90

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.

公开(公告)号：DE3669016D1

公开(公告)日：1990-03-15

申请号：DE3669016

申请日：1986-10-17

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/90

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.

公开(公告)号：DE2619965A1

公开(公告)日：1976-12-16

申请号：DE2619965

申请日：1976-05-06

Applicant: IBM

Inventor： PATRICK WILLIAM JOHN ,  SCILLA SALVATORE JAMES ,  WESTDORP WOLFGANG ALFRED

IPC: C01B33/02 ,  C01B33/021 ,  C30B15/00 ,  C30B15/10 ,  C30B29/06 ,  H01L21/208 ,  B01J17/18 ,  B01J17/40

公开(公告)号：DE3676458D1

公开(公告)日：1991-02-07

申请号：DE3676458

申请日：1986-07-29

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  GUTHRIE WILLIAM LESLIE ,  MARKAREWICZ STANLEY RICHARD ,  MENDEL ERIC ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  PLISKIN WILLIAM AARON ,  RISEMAN JACOB ,  SCHIABLE PAUL MARTIN ,  STANDLEY CHARLES LAMBER

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306 ,  H01L21/60

Abstract: A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate (31) having a patterned insulating layer (32) of dielectric material thereon, is coated with a layer of metal (34). The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes (33) where it is left intact (34a). This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier.

公开(公告)号：DE3668188D1

公开(公告)日：1990-02-15

申请号：DE3668188

申请日：1986-10-07

Applicant: IBM

Inventor： BARBEE STEVEN GEORGE ,  DEVINE GREGORY PAUL ,  PATRICK WILLIAM JOHN ,  SEELEY GERARD

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  C23C14/54 ,  C23C14/24 ,  C23C14/34 ,  C23C16/44 ,  H05K3/16

Abstract: The system for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a reservoir (10) for heating a material from which gas is propagated; a low pressure reactor (20) wherein said layer is formed; connecting means (18) between said reservoir and said reactor; means connected to the outlet of said reactor for creating a vacuum therein and causing said gas to flow from said reservoir through said connecting means to said reactor; first pressure control means at the outlet of said reservoir for maintaining the pressure of said gas at the reservoir end of said connecting means at a first value; and second pressure control means at the inlet of said reactor for maintaining the pressure of said gas thereat at a second value by adjusting said means for creating a vacuum, thereby providing a constant mass flow rate of said gas into said reactor. The method of forming a layer of material from a gas upon the surface of an object comprises: heating a reservoir to a temperature sufficient to vaporize a material from which said gas is formed; creating a vacuum in a reactor containing said object to cause said gas to flow from said reservoir through a connecting means to said reactor; and maintaining the reservoir outlet pressure and the reactor inlet pressure at constant values, thereby providing a constant mass flow rate of said gas into said reactor.

公开(公告)号：BR8604547A

公开(公告)日：1987-05-26

申请号：BR8604547

申请日：1986-09-23

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/88 ,  H01L27/04

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.

公开(公告)号：DE3370663D1

公开(公告)日：1987-05-07

申请号：DE3370663

申请日：1983-03-22

Applicant: IBM

Inventor： BISCHOFF BERNARD KURT ,  PATRICK WILLIAM JOHN ,  STRUDWICK THOMAS HYDE

IPC: C30B33/00 ,  H01L21/322 ,  C30B29/06

Abstract: A wide precipitate-free-zone (PFZ) is formed at the surface of a semiconductor substrate and at the same time a high density of oxygen precipitate particles are produced beneath at the surface PFZ by a two step annealing process involving a first cycle of very rapidly heating the wafers to a first high temperature and a second cycle of very slowly heating the wafers to a second high temperature.

公开(公告)号：DE69024263T2

公开(公告)日：1996-07-11

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：ES2080818T3

公开(公告)日：1996-02-16

申请号：ES90480031

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.