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    POLYMER SEALANT/ADHESIVE AND ITS USE IN ASSEMBLING ELECTRONIC PACKAGE
    1.
    发明专利
    POLYMER SEALANT/ADHESIVE AND ITS USE IN ASSEMBLING ELECTRONIC PACKAGE 失效

    公开(公告)号：JPH10245539A

    公开(公告)日：1998-09-14

    申请号：JP19831797

    申请日：1997-07-24

    Applicant: IBM

    Inventor： BERGER MICHAEL ,  COICO PATRICK A ,  SACHDEV KRISHNA GANDHI ,  POMPEO FRANK L

    IPC: C08L79/08 ,  C08G73/10 ,  C09J179/08 ,  C09J183/10 ,  H01L21/52

    Abstract: PROBLEM TO BE SOLVED: To obtain a siloxane-containing polyimide adhesive capable of TSM capping with a reduced seal band width in assembling an electronic package and soluble in a solvent friendly to the environment by using an aromatic diether dianhydride, an aromatic diamine having a flexible molecular chain and a polysiloxanediamine. SOLUTION: The composition for forming the adhesive comprises an aromatic diether dianhydride, an aromatic diamine having a flexible molecular chain and a polysiloxanediamine having a vinyl functional group as part of the structure. The molar ratio of the anhydride to the total diamines is about 0.95/1 to 1.05/1, and an excess molar amount of the reactants are capped with a monohydride or a monoamine compound. This composition is polymerized to obtain a siloxane-containing polyimide adhesive. The seal band width is below 4mm.

    BONDING AGENT OF SOLVENT-LESS EPOXY BASE FOR ATTACHING SEMICONDUCTOR CHIP AND ITS METHOD
    2.
    发明专利
    BONDING AGENT OF SOLVENT-LESS EPOXY BASE FOR ATTACHING SEMICONDUCTOR CHIP AND ITS METHOD 失效

    公开(公告)号：JPH1064929A

    公开(公告)日：1998-03-06

    申请号：JP16762597

    申请日：1997-06-24

    Applicant: IBM

    Inventor： MICHAEL BERGER ,  MARK S CHACE ,  SACHDEV KRISHNA GANDHI

    IPC: C08G59/30 ,  C08G59/62 ,  C09J163/00 ,  H01L21/52 ,  H01L21/58

    Abstract: PROBLEM TO BE SOLVED: To endure the condition of exposure to the stress used for product reliability test, with no problem of resin bleeding, and to allow re-working without damaging a device and package material, by employing a resin composition containing a siloxane-contained polyepoxide, a curing additive soluble in it and a curing medium. SOLUTION: A composition which is curable with no solvent is employed which contains a siloxane-containing polyepoxide, curing additive which is soluble in it without a medium, and a curing medium. As the polyepoxide, the one expressed by a general equation, with x being 2-8, n being 1-10 is preferable. For example, a mixture of 1.3-bis(glycidoxypropyl) tetramethyldisiloxane 3.66g and 2,2',4,4'-tetrahydroxybenzophenon 1.2g is heated while agitated at 50-60 deg.C to generate a transparent solution. Then, the solution is cooled down to a room temperature, and mixed with di-n-butyl-dilauphosphate-tin 0.1g and liquid-like dicyanate aryl 0.2g, and then a silver flake 14.5g is added, to obtain a homogeneous disperse system.

    5.
    发明专利
    未知

    公开(公告)号：DE68926143D1

    公开(公告)日：1996-05-09

    申请号：DE68926143

    申请日：1989-09-16

    Applicant: IBM

    Inventor： BRUCE JAMES ALLEN ,  KERBAUGH MICHAEL LYNN ,  KWONG RANEE WAI-LING ,  LEE TANYA NINA ,  LINDE HAROLD GEORGE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI

    IPC: H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

    Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.

    7.
    发明专利
    未知

    公开(公告)号：DE3854113T2

    公开(公告)日：1996-02-29

    申请号：DE3854113

    申请日：1988-09-27

    Applicant: IBM

    Inventor： DESILETS BRIAN HENRY ,  KAPLAN RICHARD DEAN ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI ,  SANCHEZ SUZAN ANN

    IPC: H01L21/302 ,  G03F7/09 ,  H01B13/00 ,  H01L21/3065

    Abstract: A method of image transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The resist is image wise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

    8.
    发明专利
    未知

    公开(公告)号：DE3854113D1

    公开(公告)日：1995-08-10

    申请号：DE3854113

    申请日：1988-09-27

    Applicant: IBM

    Inventor： DESILETS BRIAN HENRY ,  KAPLAN RICHARD DEAN ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI ,  SANCHEZ SUZAN ANN

    IPC: H01L21/302 ,  G03F7/09 ,  H01B13/00 ,  H01L21/3065

    Abstract: A method of image transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The resist is image wise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.

    9.
    发明专利
    未知

    公开(公告)号：BR8502757A

    公开(公告)日：1986-02-18

    申请号：BR8502757

    申请日：1985-06-11

    Applicant: IBM

    Inventor： ANDERSON HERBERT RUDOLF JR ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI

    IPC: H01L21/3205 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H05K3/04 ,  H01L21/312 ,  H01L21/443

    Abstract: An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.

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