公开(公告)号：WO03038875A2

公开(公告)日：2003-05-08

申请号：PCT/DE0204034

申请日：2002-10-29

Applicant: INFINEON TECHNOLOGIES AG ,  CZECH GUENTHER ,  FUELBER CARSTEN ,  KIRCHHOFF MARKUS ,  STEGEMANN MAIK ,  VOGT MIRKO ,  WEGE STEPHAN

Inventor： CZECH GUENTHER ,  FUELBER CARSTEN ,  KIRCHHOFF MARKUS ,  STEGEMANN MAIK ,  VOGT MIRKO ,  WEGE STEPHAN

IPC: G03F7/36 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/027 ,  C23C16/26 ,  C23C16/27 ,  G03F7/09 ,  G03F7/11

CPC classification number: H01L21/3146 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144

Abstract: According to the invention, a carbon hard mask layer (2) is applied to a substrate to be structured (1) by means of a plasma-enhanced deposition method in such a way that it has a diamond-like hardness in at least one vertical section of a layer. During the production of said diamond-type vertical section of a layer, the deposition parameters are adjusted in such a way that certain diamond-type growth regions are removed in situ by means of subsequent etching processes, and other diamond-type regions remain.

Abstract translation: 碳硬掩模层（2）以这样的方式通过等离子辅助沉积到基底上要被图案化（1）施加，使得其具有在金刚石的至少一个层厚度部分类似的硬度。 在这种类金刚石层厚度部分的产生，用于沉积的参数被设定为使得其它生长区域形成类金刚石原位通过随后的蚀刻工艺被去除，并且保持在该金刚石状形成的部分。

公开(公告)号：DE102004024886A1

公开(公告)日：2005-12-15

申请号：DE102004024886

申请日：2004-05-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTMANN STEPHAN ,  VOGT MIRKO ,  HELLER MARCEL ,  VOELKL LARS ,  SACHSE HERMANN

IPC: G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316

Abstract: Method for applying photoactive multilayer coatings (6) to substrates (3) for transfer of structures from a photomask into the substrate comprises applying a nitrogen-free dielectric anti-reflection layer (1) to the substrate. This consists of non-stoichiometric silicon oxide and has a surface (4) to which a photoactive resist layer (2) can be applied. An independent claim is included for multilayer coating systems as described.

公开(公告)号：DE102004008497A1

公开(公告)日：2005-09-08

申请号：DE102004008497

申请日：2004-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OFFENBERG DIRK ,  VOGT MIRKO ,  HARTMANN STEPHAN

IPC: G03F1/08 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8242

Abstract: The present invention provides a fabrication method for a semiconductor structure in a substrate, the semiconductor structure having at least two regions that are to be patterned differently. A fabrication of a patterned first region in the substrate, so that the semiconductor structure has a non-patterned second region and the patterned first region, is followed by a deposition of a cover layer that grows over the patterned first region, so that the cover layer above the patterned first region forms a closure, which covers over the patterned first region. This is followed by a fabrication of the patterned second region, the patterned first region remaining protected at least by the closure of the cover layer. The final step effected is a removal of the cover layer above the semiconductor structure, which now has two differently patterned regions.

公开(公告)号：DE10330795A1

公开(公告)日：2005-02-17

申请号：DE10330795

申请日：2003-07-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOGT MIRKO

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/768 ,  B81C1/00 ,  C23C16/22 ,  G03F1/00

Abstract: The present invention relates to a carbon hard mask having a carbon layer and a bonding layer for bonding to metal. The present invention also relates to a process for producing this carbon hard mask, and to its use in the patterning of metallic layers, in particular in semiconductor fabrication.

公开(公告)号：DE10218955A1

公开(公告)日：2003-11-13

申请号：DE10218955

申请日：2002-04-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOGT MIRKO ,  HAUSMANN ALEXANDER

IPC: G03F7/09

Abstract: Production of a structured layer on a semiconductor substrate comprises forming an N-containing dielectric antireflection layer (3) on the layer (2) to be structured on the substrate (1), forming an N-free SiOx layer (4) on the antireflection layer, forming a photolacquer layer on the SiOx layer, exposing the photolacquer (5) to form a prescribed structure on the photolacquer, developing the photolacquer layer to form a photolacquer structure, and transferring the photolacquer structure to the layer lying underneath to structure the layer. An Independent claim is also included for an alternative process for the production of a structured layer on a semiconductor substrate.

公开(公告)号：DE102015212669B4

公开(公告)日：2018-05-03

申请号：DE102015212669

申请日：2015-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAUTZSCH THORALF ,  FROEHLICH HEIKO ,  VOGT MIRKO ,  STEGEMANN MAIK ,  WINKLER BERNHARD ,  RÖTH ANDRE ,  BIESELT STEFFEN

IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/125

Abstract: Eine schematische Veranschaulichung einer kapazitiven mikroelektromechanischen Vorrichtung 2 wird gezeigt. Die kapazitive mikroelektromechanische Vorrichtung 2 umfasst ein Halbleitersubstrat 4, eine Stützstruktur 6, ein Elektrodenelement 8, ein Federelement 10 und eine seismische Masse 12. Die Stützstruktur 6, beispielsweise eine Stange, eine Aufhängung oder ein Pfosten, ist fest mit dem Halbleitersubstrat 4 verbunden, welches Silizium umfassen kann. Das Elektrodenelement 8 ist fest mit der Stützstruktur 6 verbunden. Darüber hinaus ist die seismische Masse 12 über das Federelement 10 mit der Stützstruktur 6 verbunden, so dass die seismische Masse 12 in Bezug auf das Elektrodenelement 8 verschiebbar, auslenkbar oder beweglich ist. Darüber hinaus bilden die seismische Masse und das Elektrodenelement einen Kondensator mit einer Kapazität aus, welche von einer Verschiebung zwischen der seismischen Masse und dem Elektrodenelement abhängt.

公开(公告)号：DE102015212669A1

公开(公告)日：2017-01-12

申请号：DE102015212669

申请日：2015-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAUTZSCH THORALF ,  FROEHLICH HEIKO ,  VOGT MIRKO ,  STEGEMANN MAIK ,  WINKLER BERNHARD ,  RÖTH ANDRE ,  BIESELT STEFFEN

IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00 ,  G01P15/125

Abstract: Eine schematische Veranschaulichung einer kapazitiven mikroelektromechanischen Vorrichtung 2 wird gezeigt. Die kapazitive mikroelektromechanische Vorrichtung 2 umfasst ein Halbleitersubstrat 4, eine Stützstruktur 6, ein Elektrodenelement 8, ein Federelement 10 und eine seismische Masse 12. Die Stützstruktur 6, beispielsweise eine Stange, eine Aufhängung oder ein Pfosten, ist fest mit dem Halbleitersubstrat 4 verbunden, welches Silizium umfassen kann. Das Elektrodenelement 8 ist fest mit der Stützstruktur 6 verbunden. Darüber hinaus ist die seismische Masse 12 über das Federelement 10 mit der Stützstruktur 6 verbunden, so dass die seismische Masse 12 in Bezug auf das Elektrodenelement 8 verschiebbar, auslenkbar oder beweglich ist. Darüber hinaus bilden die seismische Masse und das Elektrodenelement einen Kondensator mit einer Kapazität aus, welche von einer Verschiebung zwischen der seismischen Masse und dem Elektrodenelement abhängt.

公开(公告)号：DE10224215A1

公开(公告)日：2003-12-18

申请号：DE10224215

申请日：2002-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KIRCHHOFF MARKUS ,  KURTENBACH ANDREAS ,  DRESCHER DIRK ,  VOGT MIRKO

IPC: C23C16/26 ,  C23C16/27 ,  C23C16/34 ,  C23C16/56 ,  H01L21/033 ,  H01L21/265 ,  H01L21/308 ,  H01L21/311 ,  H01L21/314 ,  H01L21/318 ,  C23C14/48

Abstract: Following carbonaceous covering layer (2) deposition (e.g. by PCVD), ion implantation is carried out. Ionized carbon (4) or -nitrogen (4) is implanted into the covering layer. This converts the carbonaceous layer into diamond or a carbon nitride of the composition CxNy.

公开(公告)号：DE10223954A1

公开(公告)日：2003-12-11

申请号：DE10223954

申请日：2002-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOGT MIRKO

IPC: C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/505 ,  H01L21/02 ,  H01L21/314 ,  H01L21/318 ,  H01L21/8242

Abstract: A plasma-enhanced chemical vapor deposition process for depositing relatively high dielectric constant silicon nitride or oxynitride to form an MIM capacitor is described. The flow rate ratios for the silicon nitride layer are: silane-to-ammonia between 1:20 and 6:5 and silane-to-nitrogen flow between 1:40 and 3:5. A pressure in the process chamber is between 260 Pa and 530 Pa. The flow rate ratios for the silicon oxynitride layer are: silane-to-dinitrogen monoxide between 1:2 and 25:4 and silane-to-nitrogen between 1:100 and 1:10. A larger, non-stoichiometric amount of silicon is incorporated in the layers as the flow rate of the silicon precursor is increased. The layers are deposited in substeps in which the deposition is interrupted between successive substeps. The layer is exposed to an oxygen-containing plasma such that electrically conductive regions of the layer are converted into electrically insulating regions as a result of interaction with the plasma.

公开(公告)号：DE10142683A1

公开(公告)日：2003-04-03

申请号：DE10142683

申请日：2001-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOGT MIRKO

IPC: G03F7/16 ,  G03F7/00

Abstract: A structured layer on semiconductor substrate is produced by modifying the layer surface, forming an acid-forming photoresist layer, exposing the photoresist layer to light for embodying an acid-containing layer in the photoresist layer in accordance with a specified structure of a photoexposure mask, and selectively removing the acid-containing region with a lye. Production of a structured layer on a semiconductor substrate involves forming the layer on the substrate (1), modifying the layer surface to form a chemically neutral surface, forming an acid-forming photoresist layer (3) on the layer on the substrate, exposing the photoresist layer to light for embodying an acid-containing layer in the photoresist layer in accordance with a specified structure of a photoexposure mask, and selectively removing the acid-containing region of the photoresist layer with a lye.