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公开(公告)号：KR101306811B1
公开(公告)日：2013-09-10
申请号：KR1020120049229
申请日：2012-05-09
Applicant: 한국화학연구원
CPC classification number: C07F11/00 , C23C16/18 , C23C16/45553
Abstract: PURPOSE: A novel tungsten aminoamide halogen compound is provided to have thermal stability and high volatility, thereby simply manufacturing a thin film containing high quality tungsten. CONSTITUTION: A tungsten compound is denoted by chemical formula 1. A method for preparing the tungsten compound of chemical formula 1 comprises the step of making a compound of chemical formula 2 react with a compound of chemical formula 3. A thin film containing tungsten is grown by chemical vapor deposition (CVD) or atomic layer deposition (ALD) using the tungsten compound.
Abstract translation: 目的：提供新的钨氨基酰胺卤素化合物以具有热稳定性和高挥发性，从而简单地制造含有高质量钨的薄膜。 构成：化学式1表示钨化合物。化学式1的钨化合物的制备方法包括使化学式2的化合物与化学式3的化合物反应的步骤。生长含钨的薄膜 通过使用钨化合物的化学气相沉积（CVD）或原子层沉积（ALD）。
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公开(公告)号：KR101306810B1
公开(公告)日：2013-09-10
申请号：KR1020120049225
申请日：2012-05-09
Applicant: 한국화학연구원
CPC classification number: C07F11/00 , C23C16/18 , C23C16/45553
Abstract: PURPOSE: A novel tungsten aminoalkoxide compound is provided to have thermal stability and high volatility, thereby easily producing a thin film containing high quality tungsten. CONSTITUTION: A tungsten compound is denoted by chemical formula 1. A method for preparing the tungsten compound of chemical formula 1 comprises the step of reacting a compound of chemical formula 2 with a compound of chemical formula 3. A thin film containing tungsten is grown by chemical vapor deposition (CVD) or atomic layer deposition (ALD) using the tungsten compound.
Abstract translation: 目的：提供新的钨氨基烷氧基化合物以具有热稳定性和高挥发性，从而容易地生产含有高质量钨的薄膜。 构成：化学式1表示钨化合物。化学式1的钨化合物的制备方法包括使化学式2的化合物与化学式3的化合物反应的步骤。含有钨的薄膜通过 化学气相沉积（CVD）或原子层沉积（ALD）。
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公开(公告)号：KR1020130090151A
公开(公告)日：2013-08-13
申请号：KR1020120011260
申请日：2012-02-03
Applicant: 한국화학연구원
CPC classification number: Y02P20/544 , C30B29/38 , C01B21/00 , C30B7/10
Abstract: PURPOSE: A method for growing a III group nitride single crystal in supercritical ammonia by adding an inert gas is provided to improve purity and quality by preventing impurities from being inputted to the III group nitride single crystal. CONSTITUTION: A III group nitride seed crystal is inputted to a pressure container (10). A mineralizing agent is inputted to the pressure container. The pressure container is sealed (12). An inert gas and a solvent with nitrogen are inputted to the pressure container (14). A III group nitride single crystal is grown by heating the pressure container (18). [Reference numerals] (10) III group containing material, a III group nitride seed crystal, and mineralizing agent are inputted to a pressure container; (12) Pressure container is sealed; (14) Inert gas and a solvent with nitrogen are inputted; (16) Pressure container is heated; (18) III group nitride crystal is grown
Abstract translation: 目的：提供通过添加惰性气体在超临界氨中生长III族氮化物单晶的方法，以通过防止杂质输入到III族氮化物单晶中来提高纯度和质量。 构成：将III族氮化物晶种输入到压力容器（10）。 将矿化剂输入到压力容器。 将压力容器密封（12）。 将惰性气体和具有氮气的溶剂输入到压力容器（14）。 通过加压压力容器（18）生长III族氮化物单晶。 （10）含III族的材料，III族氮化物晶种和矿化剂输入到压力容器中; （12）压力容器密封; （14）输入惰性气体和具有氮气的溶剂; （16）加压压力容器; （18）III族氮化物晶体生长
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94.发明授权
公开(公告)号：KR101283993B1
公开(公告)日：2013-07-09
申请号：KR1020120135577
申请日：2012-11-27
Applicant: 한국화학연구원
IPC: H01L31/04 , H01L31/0224 , H01B1/14
CPC classification number: Y02E10/50
Abstract: 본 발명은 태양전지 전극 형성에 이용 가능한 비접촉 인쇄 공정용 전도성 잉크 조성물을 이용한 태양전지 전면 전극 형성 방법 및 상기 방법에 의해 제조된 전면 전극을 포함하는 태양전지에 관한 것으로, 특히 전면 전극을 형성하는 단계에 있어서 사용되는 전도성 잉크는 금속 나노 입자, 나노 사이즈의 유리 프릿 (glass frit) 및 유기 비히클을 포함한다. 본 발명은 기판에 물리적 손상을 주지 않는 비접촉 인쇄공정에 적용 가능하며, 추가적인 마스크 패터닝 공정 없이 양질의 태양전지 전면 전극을 형성 할 수 있다.
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公开(公告)号：KR1020120117587A
公开(公告)日：2012-10-24
申请号：KR1020110035415
申请日：2011-04-15
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/18 , H01L31/0216
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0445 , H01L31/0216 , H01L31/18
Abstract: PURPOSE: A method for manufacturing a Cl(G)S thin film by a Se low temperature deposition heat treatment is provided to obtain a high electric property by densifying the Cl(G)S thin film. CONSTITUTION: Se is deposited on a thin film including Cl(G)S sample heated at 60 to 150 degrees centigrade. A thin film including the Cl(G)S sample with Se is thermally treated at 300 to 600 degrees centigrade. The Cl(G)S sample includes a precursor which is transformed into Cl(G)S materials or Cl(G)S. [Reference numerals] (AA) Depositing Se vapor on the surface and the inner side of Cl(G)S sample including a precursor which is transformed into Cl(G)S materials or Cl(G)S at 60°C~150°C; (BB) Additionally thermally processing Se deposited Cl(G)S sample at 300°C~600°C by controlling steam pressure; (CC) Cooling at room temperature
Abstract translation: 目的：提供通过Se低温沉积热处理制造Cl（G）S薄膜的方法，以通过使Cl（G）S薄膜致密化来获得高电性能。 构成：Se沉积在包括在60至150摄氏度加热的Cl（G）S样品的薄膜上。 包括具有Se的Cl（G）S样品的薄膜在300至600摄氏度下进行热处理。 Cl（G）S样品包括转化为Cl（G）S材料或Cl（G）S的前体。 （AA）在包含前体的Cl（G）S样品的表面和内侧上沉积Se蒸气，其在60℃〜150℃下转化为Cl（G）S材料或Cl（G）S C; （BB）另外通过控制蒸汽压力在300℃〜600℃热处理Se沉积的Cl（G）S样品; （CC）在室温下冷却
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Patent Agency Ranking
公开(公告)号：KR101174670B1
公开(公告)日：2012-08-17
申请号：KR1020110045313
申请日：2011-05-13
Applicant: 한국화학연구원
IPC: H01L21/027 , H01L29/786
CPC classification number: H01L21/0273 , H01L21/0274 , H01L29/786 , H01L29/78606
Abstract: PURPOSE: A method for manufacturing a patterned graphene applied to a graphene based device is provided to manufacture a single-multilayered graphene with a desirable pattern by using a patterned metal catalyst layer. CONSTITUTION: A substrate is prepared. A mask is fixed to the substrate. A patterned metal catalyst layer is formed on the substrate. A graphene layer is grown on the metal catalyst layer. The grown graphene layer is transferred to the insulation layer.
Abstract translation: 目的：提供一种用于制造施加到基于石墨烯的器件的图案化石墨烯的方法，以通过使用图案化的金属催化剂层制造具有所需图案的单层多层石墨烯。 构成：制备底物。 掩模固定在基板上。 在基板上形成图案化的金属催化剂层。 在金属催化剂层上生长石墨烯层。 生长的石墨烯层被转移到绝缘层。
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公开(公告)号：KR101124226B1
公开(公告)日：2012-03-27
申请号：KR1020110013259
申请日：2011-02-15
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/0216
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/0216
Abstract: PURPOSE: A method for manufacturing a CIS thin film is provided to mass-produce a CuInSe2 photoactive layer with a solution process. CONSTITUTION: A CuInSe2 nano particle is made by using copper amino alkoxide, indium amino alkoxide and selenium powder. A coating layer is formed by coating a molybdenum film of a glass substrate with coating solutions including CuInSe2 nano particles. A CuInSe2 thin film is formed by thermally processing the glass substrate with the coating layer between 300 and 600 degrees centigrade.
Abstract translation: 目的：提供一种用于制造CIS薄膜的方法，以大量生产具有溶液工艺的CuInSe 2光敏层。 构成：使用铜氨基醇盐，铟氨基醇盐和硒粉制成CuInSe2纳米颗粒。 通过用包括CuInSe 2纳米颗粒的涂布溶液涂覆玻璃基板的钼膜来形成涂层。 CuInSe 2薄膜是通过在300〜600摄氏度的涂层之间热处理玻璃基板而形成的。
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98.发明授权
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公开(公告)号：KR101039442B1
公开(公告)日：2011-06-08
申请号：KR1020080106983
申请日：2008-10-30
Applicant: 한국화학연구원
Abstract: 본 발명은 신규의 스트론튬 아미노 알콕사이드 화합물 및 그 제조 방법에 관한 것으로, 구체적으로는 하기 화학식 1로 표시되는 스트론튬 아미노 알콕사이드 화합물에 관한 것으로 스트론튬을 포함하는 화합물을 형성하기 위한 전구체로서 열적으로 안정하고 휘발성이 증가된 신규한 스트론튬 아미노 알콕사이드 화합물 및 그 제조방법에 관한 것이다.
[화학식 1]
Sr[OA-NR
1 R
2 ]
2
상기 식에서 A는 할로겐으로 치환되거나 치환되지 않은 선형 또는 분지형의 (C2-C10)알킬렌기이고; R
1 및 R
2 는 서로 독립적으로 할로겐, 산소, 질소로 치환되거나 치환되지 않은 선형 또는 분지형의 (C1-C7)알킬기이다.
스트론튬 아미노알콕사이드, 전구체, 스트론튬 산화물, 박막, MOCVD-
100.发明公开
公开(公告)号：KR1020110024157A
公开(公告)日：2011-03-09
申请号：KR1020090082043
申请日：2009-09-01
Applicant: 한국화학연구원
Abstract: PURPOSE: A method for manufacturing low temperature water-based copper-indium-(gallium-)selenide(CuIn_xGa_1-xSe_2) nano particles is provided to use carboxylic acid derivative in order to be eco-friendly implemented. CONSTITUTION: A copper complex is prepared by reacting a copper compound and carboxylic acid derivative, represented by chemical formula 1, in an aqueous solvent. A selenium compound is introduced into the copper complex solution, and a copper-selenium complex is prepared. An indium compound is introduced into a copper-selenium complex solution. Copper-indium-(gallium-)selenium nano particles are prepared.
Abstract translation: 目的：提供一种制造低温水性铜铟 - （ - 硒化镓）（CuIn_xGa_1-xSe_2）纳米颗粒的方法，以使用羧酸衍生物进行环保实施。 构成：通过将化合物1表示的铜化合物和羧酸衍生物在水性溶剂中反应制备铜络合物。 将硒化合物引入铜络合物溶液中，并制备铜 - 硒络合物。 将铟化合物引入铜 - 硒络合物溶液中。 制备了铜 - 铟 - （镓）硒纳米颗粒。
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