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104 records (took 0.05 seconds)

    96.
    发明专利
    未知

    公开(公告)号：DE69831075D1

    公开(公告)日：2005-09-08

    申请号：DE69831075

    申请日：1998-10-21

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  MASTROMATTEO UBALDO

    IPC: H01L21/28 ,  H01L23/482 ,  H01L23/522 ,  H01L29/84 ,  H01L21/60

    Abstract: The integrated device comprises an epitaxial layer (22) forming a first and a second region (23, 45) separated by at least one air gap (24). The first region (23) forms, for example, a suspended mass of an accelerometer. A bridge element (26) extends on the air gap (24) and has a suspended electrical connection line (28) electrically connecting the first and the second region (23, 45) and a protective structure (29) of etch-resistant material, which surrounds the electrical connection line (28) on all sides. The protective structure (29) is formed by a lower portion (31a) of silicon nitride and an upper portion (32a) of silicon carbide, the silicon carbide surrounding the electrical connection line (28) at the upper and lateral sides.

    97.
    发明专利
    未知

    公开(公告)号：DE69918551D1

    公开(公告)日：2004-08-12

    申请号：DE69918551

    申请日：1999-09-17

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MURARI BRUNO ,  MASTROMATTEO UBALDO ,  VIGNA BENEDETTO

    IPC: G11B21/10 ,  G11B5/60 ,  H01L21/60 ,  H01L23/34 ,  H01R4/02 ,  H01R43/02

    Abstract: A method for the electrical and/or mechanical interconnection of components of a microelectronic system comprising at least one first component (5a, 5b; 50a-50d, 51a-51d; 70) and one second component (2; 71), provides for the formation of at least one local Joule-effect micro-heater (R) incorporated in one of the first and second components at a respective soldering point between the first component and the second component, and for the supply of electrical energy (V, 13a, 13b) to the micro-heater so as to utilize the heat produced by the micro-heater by the Joule effect to solder the first and second components at the soldering point.

    98.
    发明专利
    未知

    公开(公告)号：DE69630292D1

    公开(公告)日：2003-11-13

    申请号：DE69630292

    申请日：1996-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VILLA FLAVIO ,  FERRARI PAOLO ,  VIGNA BENEDETTO

    IPC: B81B1/00 ,  B81C1/00 ,  G01N27/12 ,  H01L21/764 ,  H01L21/00 ,  H01L21/762 ,  G01L9/00

    Abstract: The chemoresistive gas sensor comprises a heating element (12) integrated in a dedicated SOI substrate (100) having an air gap (3) in the intermediate oxide layer (2) between two wafers (1, 4) of monocrystalline silicon; the sensitive element (25) of tin oxide is formed over the heating element and separated from it by a dielectric insulating and protective layer. A trench (28), formed at the end of the fabrication of the device, extends from the surface (6) of the wafer (4) in which the heating element (12) is integrated, up to the air gap (3) to mechanically separate and insulate the sensitive element (25) from the rest of the chip, and so improve the mechanical characteristics, sensitivity and response of the sensor.

    100.
    发明专利
    未知

    公开(公告)号：ITTO20011038A1

    公开(公告)日：2003-04-30

    申请号：ITTO20011038

    申请日：2001-10-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  VISALLI GIUSEPPE ,  COMBI CHANTAL ,  FIORITO MATTEO ,  MOTTURA MARTA

    IPC: H01L21/762 ,  H01L21/764 ,  H01L27/08

    Abstract: A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.

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