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公开(公告)号:DE102005005750B4
公开(公告)日:2009-06-04
申请号:DE102005005750
申请日:2005-02-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MAHLER JOACHIM , HAIMERL ALFRED , SCHOBER WOLFGANG , BAUER MICHAEL , KESSLER ANGELA
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公开(公告)号:DE102008051465A1
公开(公告)日:2009-05-20
申请号:DE102008051465
申请日:2008-10-13
Applicant: INFINEON TECHNOLOGIES AG
Inventor: RIEDL EDMUND , MAHLER JOACHIM , LODERMEYER JOHANNES , VAUPEL MATHIAS , JORDAN STEFFEN
Abstract: A semiconductor package includes a leadframe defining a die pad, a chip electrically coupled to the die pad, encapsulation material covering the chip and the die pad, and a plurality of lead ends exposed relative to the encapsulation material and configured for electrical communication with the chip, and a nitrogen-containing hydrocarbon coating disposed over at least the lead ends of the leadframe, where the hydrocarbon coating is free of metal particles.
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公开(公告)号:DE102008035911A1
公开(公告)日:2009-04-16
申请号:DE102008035911
申请日:2008-07-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor: LANDAU STEFAN , KOENIGSBERGER ALEXANDER , MAHLER JOACHIM , SCHIESS KLAUS
IPC: H01L25/065 , H01L21/78 , H01L25/07 , H01L25/16
Abstract: A method includes providing an integral array of first carriers, arranging first semiconductor chips on the first carriers, and arranging an integral array of second carriers over the semiconductor chips.
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公开(公告)号:DE102006056363A1
公开(公告)日:2008-06-05
申请号:DE102006056363
申请日:2006-11-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BAUER MICHAEL , KESSLER ANGELA , SCHOBER WOLFGANG , HAIMERL ALFRED , MAHLER JOACHIM
Abstract: A semiconductor module includes a module package including a first substrate having a first semiconductor device and a second substrate having a second semiconductor device. A first outer conductor extends from the module package and is connected to the first substrate and a second outer conductor extends from the module package and is connected to the second substrate. A method for producing the semiconductor module includes attaching first outer conductors of a leadframe to a first substrate, where the first substrate includes a first semiconductor device that is attached to the first substrate either before or after attaching the first outer conductors. A second substrate is provided including a signal processing circuit and the second substrate is fastening to second outer conductors of the leadframe.
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公开(公告)号:DE102006045415A1
公开(公告)日:2008-04-03
申请号:DE102006045415
申请日:2006-09-26
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BAUER MICHAEL , HAIMERL ALFRED , KESSLER ANGELA , MAHLER JOACHIM , SCHOBER WOLFGANG
Abstract: The assembly has a carrier (100) e.g. printed circuit board (PCB), and a component e.g. semiconductor component (200), in a housing. A molding material (400) completely surrounds the carrier and the component, and partially surrounds an electrical contact strip (300). The component is superimposed on the carrier that is provided with a hole (500). The electrical contact strip is directly connected with the carrier, and the holes are formed beneath the component. An independent claim is also included for a method for producing a component assembly.
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公开(公告)号:DE102006017668A1
公开(公告)日:2007-10-18
申请号:DE102006017668
申请日:2006-04-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MAHLER JOACHIM , LANDAU STEFAN
Abstract: A power semiconductor component and process for producing power semiconductor components is disclosed. In one embodiment, a power semiconductor component is produced, including applying a semiconductor ship to a substrate using a fluorescent marker substance.
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公开(公告)号:DE102006017115A1
公开(公告)日:2007-10-18
申请号:DE102006017115
申请日:2006-04-10
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRUNNBAUER MARKUS , MAHLER JOACHIM , FUERGUT EDWARD , BAUER MICHAEL
Abstract: A semiconductor device and a method for producing it is disclosed. In one embodiment, an adhesion-promoting layer having nanoparticles is arranged between a circuit carrier and a plastic housing composition for the purpose of enhanced adhesion.
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公开(公告)号:DE102005061248B4
公开(公告)日:2007-09-20
申请号:DE102005061248
申请日:2005-12-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MAHLER JOACHIM , WOMBACHER RALF , LACHMANN DIETER , BETZ BERND , PAULUS STEFAN , RIEDL EDMUND
IPC: H01L23/16 , C09D5/25 , C23C16/453 , H01L21/50 , H01L23/08
Abstract: A semiconductor device includes semiconductor device components, an adhesion promoter structure and a plastic housing composition. The semiconductor device components are embedded in the plastic housing composition with the adhesion promoter structure being disposed between the device components and the housing composition. The adhesion promoter structure includes first and second adhesion promoter layers. The first layer includes metal oxides. The metal oxides being silicates of a reactive compound composed of oxygen and organometallic molecules. The second layer includes at least one polymer.
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公开(公告)号:DE102005058654A1
公开(公告)日:2007-06-14
申请号:DE102005058654
申请日:2005-12-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HOSSEINI KHALIL , MAHLER JOACHIM , RIEDL EDMUND , GALESIC IVAN , ROESL KONRAD
IPC: H01L21/60
Abstract: A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.
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公开(公告)号:DE102005025083B4
公开(公告)日:2007-05-24
申请号:DE102005025083
申请日:2005-05-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: MAHLER JOACHIM , HAIMERL ALFRED , SCHOBER WOLFGANG , BAUER MICHAEL , KESSLER ANGELA
Abstract: Composite with a first part composed of a thermoset material and with a second part composed of a thermoplastic material, and with an adhesion-promoter layer located between these, where the first part has been bonded by way of the adhesion-promoter layer to the second part, and where the adhesion-promoter layer comprises pyrolytically deposited semiconductor oxides and/or pyrolytically deposited metal oxides.
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