公开(公告)号：KR1020130011218A

公开(公告)日：2013-01-30

申请号：KR1020110072210

申请日：2011-07-21

Applicant: 삼성전자주식회사

Inventor： 이태연 ,  박윤동 ,  이용제 ,  김승현 ,  공주영 ,  홍성권

IPC: H04N5/363 ,  H04N13/00 ,  H01L27/146 ,  H04N5/232

CPC classification number: H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/363 ,  H01L27/146 ,  H04N5/232 ,  H04N5/2625 ,  H04N13/00

Abstract: PURPOSE: A distance measuring method and a 3D image sensor performing the same are provided to improve the reliability of correlated double sampling by preparing a temporary storage area on a distance pixel and efficiently removing a noise. CONSTITUTION: A light sensing device emits modulated transmitting light to a subject(S100). The light sensing device stores a photocharge in a temporary storage area of a distance pixel(S200). The light sensing device supplies a reset voltage to a floating diffusion area of the distance pixel(S300). The light sensing device electrically connects the temporary storage area with the floating diffusion area after detecting a noise voltage(S400). The light sensing device detects a demodulation voltage(S500). The light sensing device determines an effective voltage from a difference between the noise voltage and the demodulation voltage(S600). [Reference numerals] (AA) Start; (BB) End; (S100) Emitting modulated transmitting light to a subject; (S200) Storing a photocharge in a temporary storage area by responding a demodulated signal; (S300) Detecting a noise voltage after applying a reset voltage to a floating diffusion area; (S400) Electrically connecting the temporary storage area and the floating diffusion area after detecting the noise voltage; (S500) Detecting the demodulated signal after electrically connecting the temporary storage area and the floating diffusion area; (S600) Determining an effective voltage from a difference between the noise voltage and the demodulation voltage

Abstract translation: 目的：提供一种距离测量方法和执行该距离测量方法的3D图像传感器，以通过准备距离像素上的临时存储区域并有效地消除噪声来提高相关双重采样的可靠性。 构成：光感测装置向被摄体发射调制的透射光（S100）。 感光装置将光电荷存储在距离像素的临时存储区域（S200）中。 光感测装置将复位电压提供给距离像素的浮动扩散区域（S300）。 光检测装置在检测到噪声电压之后将临时存储区域与浮动扩散区域电连接（S400）。 光检测装置检测解调电压（S500）。 光检测装置根据噪声电压和解调电压之间的差异确定有效电压（S600）。 （附图标记）（AA）开始; （BB）结束; （S100）向对象发射调制的发射光; （S200）通过对解调信号进行响应将光电荷存储在临时存储区域中; （S300）在向浮动扩散区域施加复位电压之后检测噪声电压; （S400）检测到噪声电压后，电气连接临时存储区域和浮动扩散区域; （S500）在电连接临时存储区域和浮动扩散区域之后检测解调信号; （S600）从噪声电压和解调电压之间的差确定有效电压

公开(公告)号：KR1020120119279A

公开(公告)日：2012-10-31

申请号：KR1020110037096

申请日：2011-04-21

Applicant: 삼성전자주식회사

Inventor： 김원주 ,  박윤동 ,  고형수

IPC: H01L27/146

CPC classification number: H04N5/3745 ,  H04N5/3696 ,  H04N9/045 ,  H04N13/254

Abstract: PURPOSE: A pixel array and a three dimensional image sensor including the same are provided to easily increase the size of distance pixels without damage to color pixels by forming the color pixels in a uniformly arranged color area and the distance pixels in a distance area. CONSTITUTION: A plurality of color pixels is formed in a color area(140). The color area is separated at first interval. The color area is separated at second interval. A plurality of distance pixels is formed in a distance area(160) in an empty area between the color areas.

Abstract translation: 目的：提供像素阵列和包括该像素阵列的三维图像传感器，以通过在均匀排列的颜色区域和距离区域中的距离像素形成彩色像素来容易地增加距离像素的尺寸而不损害彩色像素。 构成：在颜色区域（140）中形成多个彩色像素。 颜色区域以第一个间隔分开。 颜色区域以第二间隔分开。 在颜色区域之间的空白区域中的距离区域（160）中形成多个距离像素。

公开(公告)号：KR1020120110614A

公开(公告)日：2012-10-10

申请号：KR1020110028579

申请日：2011-03-30

Applicant: 삼성전자주식회사

Inventor： 이태연 ,  이준호 ,  박윤동 ,  하경호 ,  이용제

IPC: H04N5/225 ,  H01L27/146

CPC classification number: H04N5/2254 ,  H01L27/14603 ,  H04N5/369

Abstract: PURPOSE: A 3D image sensor is provided to polarize received light reflected from a subject, thereby reducing interference effects due to external light. CONSTITUTION: A light source module(300) irradiates transmitting light onto a subject. A lens module(400) polarizes the received light, which is reflected from the subject, by the transmitting light. The lens module provides the polarized received light. A sensing unit(100) converts the polarized received light into electrical signals.

Abstract translation: 目的：提供3D图像传感器，用于偏振从被摄体反射的接收光，从而减少由外部光引起的干扰影响。 构成：光源模块（300）将透射光照射到被摄体上。 透镜模块（400）通过透射光将从受检者反射的接收光偏振。 透镜模块提供偏振的接收光。 感测单元（100）将偏振的接收光转换成电信号。

公开(公告)号：KR1020120105169A

公开(公告)日：2012-09-25

申请号：KR1020110022816

申请日：2011-03-15

Applicant: 삼성전자주식회사

Inventor： 박윤동 ,  포썸,에릭알.

IPC: H04N13/02 ,  H04N13/00 ,  G06T15/00

CPC classification number: H04N13/271 ,  H04N13/254 ,  H04N13/00 ,  G06T15/00

Abstract: PURPOSE: An operation method for a three dimensional image sensor including a plurality of distance pixels is provided to maintain an S/N(Signal to Noise) ratio by grouping the distance pixels. CONSTITUTION: A light source module emits modulated light(S210). A three dimensional image sensor detects the modulated light using a plurality of distance pixels(S230). A DSP(Digital Signal Processor) unit groups the distance pixels as a plurality of pixel groups. The DSP unit creates a plurality of pixel group outputs corresponding to the pixel groups(S250). [Reference numerals] (AA) Start; (BB) End; (S210) Modulation light emission; (S230) Modulation light is detected using a plurality of distance pixels; (S250) A plurality of distance pixel outputs is created by grouping a plurality of pixels including a size which is determined by a distance

Abstract translation: 目的：提供一种包括多个距离像素的三维图像传感器的操作方法，以通过对距离像素进行分组来维持S / N（信噪比）。 构成：光源模块发射调制光（S210）。 三维图像传感器使用多个距离像素来检测调制光（S230）。 DSP（数字信号处理器）单元将距离像素分组为多个像素组。 DSP单元产生对应于像素组的多个像素组输出（S250）。 （附图标记）（AA）开始; （BB）结束; （S210）调制发光; （S230）使用多个距离像素来检测调制光; （S250）通过对包括由距离确定的尺寸的多个像素进行分组来创建多个距离像素输出

公开(公告)号：KR1020120069833A

公开(公告)日：2012-06-29

申请号：KR1020100131147

申请日：2010-12-21

Applicant: 삼성전자주식회사

Inventor： 장승혁 ,  박윤동 ,  이용제

IPC: H04N5/232

CPC classification number: H04N5/351 ,  G01S7/4811 ,  G01S17/06 ,  H04N5/2256 ,  H04N13/254 ,  H04N13/271 ,  H04N5/232

Abstract: PURPOSE: An operation method of a three-dimensional image sensor is provided to accurately obtain distance information and to reduce power consumption. CONSTITUTION: The distance of a subject from a three-dimensional image sensor is measured through a light(S310). The light is emitted from a light source module. A diffusion angle of the light is controlled from the light source module(S330). The diffusion angle of the light is reduced from the three-dimensional image sensor. The light source module includes light source and a lens.

Abstract translation: 目的：提供三维图像传感器的操作方法，以准确地获取距离信息并降低功耗。 构成：通过光测量被摄体与三维图像传感器的距离（S310）。 光从光源模块发射。 从光源模块控制光的扩散角（S330）。 光的扩散角从三维图像传感器减小。 光源模块包括光源和透镜。

公开(公告)号：KR1020110050351A

公开(公告)日：2011-05-13

申请号：KR1020100083681

申请日：2010-08-27

Applicant: 삼성전자주식회사

Inventor： 구준모 ,  이하라히사노리 ,  박윤동 ,  오훈상 ,  최상준 ,  배형진 ,  윤태응 ,  홍성권

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1461 ,  H01L27/14689

Abstract: PURPOSE: An image sensor is provided to improve the transfer speed of signal charge by forming a transfer transistor to have a surface channel, a side channel, and a buried channel. CONSTITUTION: In an image sensor, a deep well is provided in a semiconductor substrate(10). An element isolation region(15) includes an element isolation film made of an insulating material and also includes an element isolation impurity region. A photoelectric conversion unit is provided in the active region of the semiconductor substrate. A first photoelectric conversion unit(23) includes a first N-type impurity area(22). A second photoelectric conversion unit includes a second N-type impurity region(25).

Abstract translation: 目的：提供一种图像传感器，通过形成具有表面通道，侧通道和埋入通道的转移晶体管来提高信号电荷的传输速度。 构成：在图像传感器中，在半导体衬底（10）中提供深阱。 元件隔离区域（15）包括由绝缘材料制成的元件隔离膜，并且还包括元件隔离杂质区域。 在半导体基板的有源区域设置有光电转换单元。 第一光电转换单元（23）包括第一N型杂质区（22）。 第二光电转换单元包括第二N型杂质区（25）。

公开(公告)号：KR1020110049002A

公开(公告)日：2011-05-12

申请号：KR1020090105800

申请日：2009-11-04

Applicant: 삼성전자주식회사

Inventor： 설상철 ,  정원철 ,  박윤동 ,  이명복 ,  진영구

IPC: H01L27/146 ,  H01L31/0216 ,  H04N13/02

CPC classification number: H01L31/02162 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14645 ,  H04N13/254

Abstract: PURPOSE: An image sensor and for manufacturing the same are provided to be applied to an image device such as a filter structure and a camera module by passing light of various wavelengths on each region adjacent to a filter structure. CONSTITUTION: In an image sensor and for manufacturing the same, a cubic color image sensor(100) comprises a color pixel sensor(110) and a distance pixel sensor(120). The color pixel sensor comprises a first photo diode(104) which receives visible light and generates photocharge. An image sensor(160) is formed on the substrate(102) including the sensor region. The image sensor has the color pixel sensor and the distance pixel sensor which have different filters respectively. A cut-off filer(150) is separated from the image sensor.

Abstract translation: 目的：提供一种图像传感器及其制造方法，其通过使各种波长的光通过与滤波器结构相邻的各区域而被应用于诸如滤波器结构和相机模块的图像装置。 构成：在图像传感器中，为了制造图像传感器，立体彩色图像传感器（100）包括彩色像素传感器（110）和距离像素传感器（120）。 彩色像素传感器包括接收可见光并产生光电荷的第一光电二极管（104）。 在包括传感器区域的基板（102）上形成图像传感器（160）。 图像传感器具有分别具有不同滤光片的彩色像素传感器和距离像素传感器。 截止滤光片（150）与图像传感器分离。

公开(公告)号：KR1020110043867A

公开(公告)日：2011-04-28

申请号：KR1020090100581

申请日：2009-10-22

Applicant: 삼성전자주식회사

Inventor： 최상준 ,  구준모 ,  문창록 ,  박윤동 ,  배대록 ,  안정착 ,  홍성권 ,  김석필 ,  오훈상

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: PURPOSE: An image sensor and a manufacturing method thereof are provided to obtain high performance and reduce the height of a structure by using a copper wire with low resistance. CONSTITUTION: A driving device is arranged on a first substrate. A first silicon oxide layer is formed on the first substrate and covers the driving device. A photoelectric conversion device is arranged on a second substrate(200a). A second silicon oxide layer covers the photoelectric conversion device and the surface of the second silicon oxide layer is bonded with the upper side of the first silicon oxide layer. A connection unit passes through the second substrate, the second silicon oxide layer, and the silicon oxide layer. An anti-reflection layer(238) is formed on the second surface of the second substrate.

Abstract translation: 目的：提供一种图像传感器及其制造方法，以通过使用具有低电阻的铜线来获得高性能并降低结构的高度。 构成：驱动装置布置在第一基板上。 第一氧化硅层形成在第一基板上并覆盖驱动装置。 光电转换装置设置在第二基板（200a）上。 第二氧化硅层覆盖光电转换元件，第二氧化硅层的表面与第一氧化硅层的上侧接合。 连接单元通过第二基板，第二氧化硅层和氧化硅层。 在第二基板的第二表面上形成防反射层（238）。

公开(公告)号：KR1020100065434A

公开(公告)日：2010-06-17

申请号：KR1020080123762

申请日：2008-12-08

Applicant: 삼성전자주식회사

Inventor： 에릭로이.포썸 ,  진영구 ,  황수정 ,  차대길 ,  박윤동 ,  안정착 ,  문경식

IPC: H01L27/14

CPC classification number: H01L27/14812 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/37452

Abstract: PURPOSE: A pixel array and a three dimensional image sensor including the same are provided to store photo-charges in a well using a pixel unit which includes a junction gate structure. CONSTITUTION: A photo-charge storing area(10) is prepared. A gating area(20) is formed on one side of the photo-charge storing area. A photo-charge generating area(30) absorbs light in order to generate photo-charges and selectively provides the photo-charges to the photo-charge storing area in response to a voltage applied to the gating area. The photo-charge storing area and the photo-charge generating area are doped into a first type.

Abstract translation: 目的：提供像素阵列和包括其的三维图像传感器，以使用包括结门结构的像素单元将光电荷存储在阱中。 规定：准备光电储存区（10）。 门光区域（20）形成在光电荷存储区域的一侧。 光电荷产生区域（30）吸收光以产生光电荷，并且响应于施加到选通区域的电压而选择性地将光电荷提供给光电荷存储区域。 光电荷存储区域和光电荷产生区域被掺杂成第一类型。

公开(公告)号：KR1020100053205A

公开(公告)日：2010-05-20

申请号：KR1020080112221

申请日：2008-11-12

Applicant: 삼성전자주식회사

Inventor： 김덕기 ,  구준모 ,  박주철 ,  나경원 ,  서동석 ,  서범석 ,  박윤동

IPC: H01L27/115 ,  H01L21/8247 ,  H01L23/62

CPC classification number: G11C13/0004 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/71 ,  H01L27/101 ,  H01L27/249 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1666 ,  H01L23/5252

Abstract: PURPOSE: A non-volatile memory device is provided to increase the stability of a data storage layer by forming a reaction preventive layer between the data story layer and electrodes. CONSTITUTION: At least one vertical electrode(20) is arranged to cross at least one horizontal electrode(10). At least one data storage layer(30) is interposed in the area where the vertical electrode and the horizontal electrode cross each other. The data storage layer stores changes in resistance. At least one reaction preventive layer(40) is interposed in the area where the vertical electrode and the horizontal electrode cross each other. The reaction preventive layer includes a first reaction preventive layer(40a) and a second reaction preventive layer(40b). The first reaction preventive layer is interposed between the horizontal electrode and the data storage layer. The second reaction preventive layer is interposed between the vertical electrode and the data storage layer.

Abstract translation: 目的：提供一种非易失性存储器件，通过在数据故事层和电极之间形成反应预防层来提高数据存储层的稳定性。 构成：至少一个垂直电极（20）布置成与至少一个水平电极（10）交叉。 在垂直电极和水平电极彼此交叉的区域中插入至少一个数据存储层（30）。 数据存储层存储电阻变化。 在垂直电极和水平电极交叉的区域中插入至少一个反应防止层（40）。 反应防止层包括第一防反应层（40a）和第二防反应层（40b）。 第一反应防止层介于水平电极和数据存储层之间。 第二反应防止层介于垂直电极和数据存储层之间。