公开(公告)号：DE10223951B4

公开(公告)日：2009-09-24

申请号：DE10223951

申请日：2002-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KARTAL VELI ,  SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  FALCK ELMAR

IPC: H01L29/861 ,  H01L21/265 ,  H01L21/328 ,  H01L29/32 ,  H01L29/36

公开(公告)号：DE102005011967B4

公开(公告)日：2007-07-19

申请号：DE102005011967

申请日：2005-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/06 ,  H01C7/112 ,  H01L29/739 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861

公开(公告)号：DE102005047106A1

公开(公告)日：2007-04-19

申请号：DE102005047106

申请日：2005-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH ,  MAUDER ANTON

IPC: H01L23/498 ,  H01B3/10 ,  H01L21/48 ,  H01L21/50 ,  H01L23/14 ,  H01L25/07 ,  H05K1/02 ,  H05K1/11 ,  H05K1/14 ,  H05K1/18 ,  H05K7/20

Abstract: A power semiconductor module has a controllable semiconductor chip (50), a first printed circuit board (1), a second printed circuit board (2), and also has one or a plurality of passive components (13, 18). The first printed circuit board (1) may have a conductor track structure (12, 13, 14), and the second printed circuit board (2) may have a conductor track structure (21, 22, 23, 24). Furthermore, an opening (19) in which the semiconductor chip (50) is arranged can be provided in the first printed circuit board (1). Furthermore, at least one passive component (13, 18) can be arranged on the first printed circuit board (1) or on the second printed circuit board (2).

公开(公告)号：DE102005039331A1

公开(公告)日：2007-02-22

申请号：DE102005039331

申请日：2005-08-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLMEROTH ARMIN ,  MAUDER ANTON ,  SEDLMAIER STEFAN

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/861

Abstract: Component has a semiconductor body and a drift zone (2) having a conductivity type in the body. A drift control zone (3) is made of a semiconductor material and is arranged adjacent to the drift zone in the body. An accumulation dielectric is arranged between the zones. The control zone has a semiconductor section that is doped in such a manner that the section is smoothed in a direction perpendicular to the dielectric. An independent claim is also included for: a power transistor comprising a drift zone and a drift control zone.

公开(公告)号：DE102005021302A1

公开(公告)日：2006-11-23

申请号：DE102005021302

申请日：2005-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER

IPC: H01L21/263 ,  H01L21/324 ,  H01L29/30 ,  H01L29/739 ,  H01L29/74 ,  H01L29/861

Abstract: The method involves irradiating a semiconductor body with particles over one of surfaces (101, 102) of the body, so that defects are produced in the semiconductor body, where the particles are electrons, protons and helium ions. One of the areas of the semiconductor body is heated with laser light on a temperature more than 400 degree Celsius by irradiating the surface of the semiconductor body to heal the defects in the surface.

公开(公告)号：DE102005011967A1

公开(公告)日：2006-10-05

申请号：DE102005011967

申请日：2005-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/06 ,  H01C7/112 ,  H01L29/739 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861

Abstract: A ditch structure is formed between the electrodes (5,6) and at part of the drift distance (4) in the semiconductor body (3). Diodes or resistors (10) are arranged in alternating sections (11,12) that are stacked together in the ditch structure. The potential distribution on a diode pile or the resistors is based on the diode or resistor voltage. The drift distance enables the concentration of dopant to increase while keeping the maximum voltage unchanged. An independent claim is also included for a semiconductor component manufacturing method.

公开(公告)号：DE10330571B4

公开(公告)日：2006-08-17

申请号：DE10330571

申请日：2003-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  RUETHING HOLGER ,  MILLER GERHARD ,  SCHULZE HANS-JOACHIM

IPC: H01L29/739 ,  H01L21/331 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/861

Abstract: A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

公开(公告)号：DE10017922B4

公开(公告)日：2006-03-16

申请号：DE10017922

申请日：2000-04-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  RUPP ROLAND ,  GRIEBL ERICH ,  WILLMEROTH ARMIN

IPC: H01L29/861

Abstract: The table has a gutter (5) for return transport of goods separation bars (4). The gutter has an opening (6) in which a roller (7) is stationarily arranged. The roller is supported on an upper strand of a conveyor (2). The roller protrudes over a base of the gutter less than the height of the goods separation bars so that a stationary arrangement of the individual roller is removed from the beginning of gutter maximally equal to the length of the bar. The gutter has a filling device (9) for goods separation bars at the beginning.

公开(公告)号：DE102004007197A1

公开(公告)日：2005-09-01

申请号：DE102004007197

申请日：2004-02-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  HIRLER FRANZ ,  MAUDER ANTON

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872

Abstract: A semiconductor component having a drift path ( 2 ) which is formed in a semiconductor body ( 1 ), is composed of a semiconductor material of first conductance type. The drift path ( 2 ) is arranged between at least one first and one second electrode ( 3, 4 ) and has a trench structure in the form of at least one trench ( 18 ). A dielectric material which is referred to as a high-k material and has a relative dielectric constant epsilon r where epsilon r >=20 is arranged in the trench structure such that at least one high-k material region ( 5 ) and one semiconductor material region ( 6 ) of the first conductance type are arranged in the area of the drift path ( 2 ).

公开(公告)号：DE59909045D1

公开(公告)日：2004-05-06

申请号：DE59909045

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PORST ALFRED ,  STRACK HELMUT ,  MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  BRUNNER HEINRICH ,  BAUER JOSEF ,  BARTHELMESS REINER

IPC: H01L29/744 ,  H01L29/10 ,  H01L29/12 ,  H01L29/36 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.