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公开(公告)号：KR1020130127023A
公开(公告)日：2013-11-22
申请号：KR1020120048230
申请日：2012-05-07
Applicant: 한국화학연구원
CPC classification number: C07F7/2284 , C07F7/2268 , C23C16/305 , C23C16/45525
Abstract: The present invention relates to a tin precursor represented by chemical formula 1. The tin precursor has an advantage that the addition of separate sulfur is not needed in the process of manufacturing a thin film and can form a high quality tin sulfide thin film by improving the thermal stability and volatility. In chemical formula 1, each of R1 and R2 is independently a C1-C10 linear or branched alkyl group; each of R3 and R4 is independently a C1-C10 linear or branched alkyl group or a C1-C10 alkyl fluoride group; and n is 1-3.
Abstract translation: 本发明涉及由化学式1表示的锡前体。锡前体具有以下优点：在制造薄膜的过程中不需要添加单独的硫，并且可以通过改进形成高质量的硫化锡薄膜 热稳定性和挥发性。 在化学式1中，R 1和R 2各自独立地为C 1 -C 10直链或支链烷基; R 3和R 4各自独立地为C 1 -C 10直链或支链烷基或C 1 -C 10烷基氟基; n为1-3。
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公开(公告)号：KR1020130125594A
公开(公告)日：2013-11-19
申请号：KR1020120049237
申请日：2012-05-09
Applicant: 한국화학연구원
CPC classification number: C23C16/403
Abstract: The present invention relates to a magnesium oxide precursor which is denoted by chemical formula 1. The magnesium oxide precursor is thermally stable and highly volatile to obtain a thin film which contains high quality magnesium oxide.
Abstract translation: 本发明涉及由化学式1表示的氧化镁前体。氧化镁前体是热稳定且高挥发性的，以获得含有高质量氧化镁的薄膜。
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公开(公告)号：KR1020130124814A
公开(公告)日：2013-11-15
申请号：KR1020120048238
申请日：2012-05-07
Applicant: 한국화학연구원
CPC classification number: C07D487/22 , H01L51/0091 , H01L51/0545
Abstract: The present invention relates to a novel preparation method of a benzoporphyrin derivative and the fabrication of an organic thin-film transistor thereby. The novel preparation method of the benzoporphyrin derivative by the present invention remarkably reduces the number of production processes compare to existing preparation method of the benzoporphyrin derivative for economically obtaining the benzoporphyrin derivative which is a target compound. The process is simplified and the facility and production costs for applying the printing method are reduced by dissolving the benzoporphyrin derivative in more than two kinds of mixed organic solvent with different boiling points, and fabricating the organic thin-film transistor using the printing method.
Abstract translation: 本发明涉及一种苯并卟啉衍生物的新型制备方法及其制造有机薄膜晶体管。 本发明的苯并卟啉衍生物的新型制备方法与用于经济地获得作为目标化合物的苯并卟啉衍生物的苯并卟啉衍生物的现有制备方法相比，显着降低了制备方法的数量。 该方法简化，通过将苯并卟啉衍生物溶解在两种以上沸点不同的混合有机溶剂中，并且使用印刷方法制造有机薄膜晶体管来降低印刷方法的设备和生产成本。
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公开(公告)号：KR1020130104627A
公开(公告)日：2013-09-25
申请号：KR1020120026274
申请日：2012-03-14
Applicant: 한국화학연구원
IPC: H01L21/205
Abstract: PURPOSE: A method for forming a thin film including Sb with an atomic layer deposition method is provided to improve productivity by forming the thin film including Sb at low temperatures through an atomic layer deposition process using a Sb precursor. CONSTITUTION: A substrate is prepared in a vacuum chamber. A Sb precursor material is prepared. A source gas is prepared by the Sb precursor material. A reactive gas including a hydrogen gas is prepared. A purge gas is prepared. A metal precursor gas is prepared by a metal precursor material. A thin film of a Sb-metal monolayer is formed on the substrate by successively supplying the source gas, the reactive gas, the purge gas, and the metal precursor gas to the vacuum chamber.
Abstract translation: 目的：提供一种通过原子层沉积法形成包含Sb的薄膜的方法，以通过使用Sb前体的原子层沉积工艺在低温下形成包含Sb的薄膜来提高生产率。 构成：在真空室中制备基材。 制备Sb前体材料。 源气体由Sb前体材料制备。 制备包括氢气的反应气体。 准备吹扫气体。 通过金属前体材料制备金属前体气体。 通过将源气体，反应气体，吹扫气体和金属前体气体依次供给到真空室，在基板上形成Sb-金属单层薄膜。
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Patent Agency Ranking
公开(公告)号：KR1020130092053A
公开(公告)日：2013-08-20
申请号：KR1020120013515
申请日：2012-02-10
Applicant: 한국화학연구원
Abstract: PURPOSE: A method for fabricating an Sb-Te-based thermoelectric thin film is provided to obtain an Sb-Te-based thermoelectric material having an excellent ZT value by using a low temperature chemical deposition method without a thermal process or a post process. CONSTITUTION: An Sb deposition layer is formed on the upper part of a substrate. An Sb precursor is supplied to a chamber. The inside of the chamber is purged by using a purge gas. A reaction gas is supplied to the purged chamber. The inside of the chamber is purged by using the purge gas.
Abstract translation: 目的：提供一种制造Sb-Te类热电薄膜的方法，通过使用不具有热处理或后处理的低温化学沉积方法来获得具有优异ZT值的Sb-Te系热电材料。 构成：在基板的上部形成Sb沉积层。 将Sb前体供应到室。 通过使用吹扫气体清洗室的内部。 反应气体被供应到清洗室。 通过使用吹扫气体清洗室的内部。
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公开(公告)号：KR101282047B1
公开(公告)日：2013-07-04
申请号：KR1020110082479
申请日：2011-08-18
Applicant: 한국화학연구원
IPC: H01L31/0445 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본 발명은 수계 용매를 이용한 CuInSe
2 입자의 제조방법에 관한 것으로, 상세하게, 본 발명에 따른 제조방법은 물 및 초산(CH
3 COOH)의 혼합 용매에 구리 분말, 인듐 분말 및 셀레늄 분말을 포함하는 금속분말 원료를 혼합하여 반응액을 제조하고, 오토클레이브를 이용하여 상기 반응액을 반응시켜 CuInSe
2 입자를 제조하는 방법에 관한 것이다.-
公开(公告)号：KR1020130057790A
公开(公告)日：2013-06-03
申请号：KR1020110123712
申请日：2011-11-24
Applicant: 한국화학연구원
IPC: C09D11/52 , H01B1/14 , H01B1/20 , H01L31/042
CPC classification number: Y02E10/50 , C09D11/52 , C09D11/30 , H01B1/16 , H01L31/042
Abstract: PURPOSE: A manufacturing method of a nano-sized glass frit is provided to obtain high producibility in low costs by using a solution method, and to easily control the size and composition for a solar cell electrode. CONSTITUTION: A manufacturing method of a nano-sized glass frit comprises: a step of manufacturing glass frit nanoparticles by using a sol-gel synthesis method; and a step of mixing the glass frit nanoparticles, metallic nanoparticles, and organic vehicles. An electrode for a solar cell comprises a semiconductor substrate, an antireflection film formed on the substrate, a first conductive layer which is formed by spreading the conductive ink on the antireflective film, and a second conductive film formed of a conductive metal, on the first conductive layer. [Reference numerals] (AA) Raw material; (BB) Basic catalyst; (CC) React; (DD) Wash; (EE) Glass frit nanoparticles
Abstract translation: 目的：提供一种纳米尺寸玻璃料的制造方法，通过使用溶液法以低成本获得高可生产性，并且容易地控制太阳能电池电极的尺寸和组成。 构成：纳米尺寸玻璃料的制造方法包括：通过使用溶胶 - 凝胶合成法制造玻璃料纳米粒子的步骤; 以及混合玻璃料纳米颗粒，金属纳米颗粒和有机载体的步骤。 用于太阳能电池的电极包括半导体衬底，形成在衬底上的抗反射膜，通过在导电金属上形成导电油墨而形成的第一导电层和由导电金属形成的第二导电膜 导电层。 （附图标记）（AA）原料; （BB）碱性催化剂; （CC）反应; （DD）洗涤; （EE）玻璃料纳米粒子
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公开(公告)号：KR101255850B1
公开(公告)日：2013-04-17
申请号：KR1020100094200
申请日：2010-09-29
Applicant: 한국화학연구원
Abstract: 본 발명은 변형된 글리콜레이트를 사용한 신규의 갈륨 글리콜레이트 화합물 및 그 제조 방법에 관한 것으로, 하기 화학식 1로 표시되는 갈륨 글리콜레이트 화합물에 관한 것이며, 본 발명에 따른 갈륨 글리콜레이트 화합물은 금속 산화물 박막 및 금속 산화물 나노입자 형성을 위한 전구체로 사용되며, 수분에 덜 민감하고 보관이 용이하며 열적 안정성이 우수한 특성이 있다.
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