Abstract:
PROBLEM TO BE SOLVED: To provide an imaging device (a device according to an aberration correction device) for a charge particle beam device as an electron microscope or the like used for the inspection and measurement of a semiconductor, in which a small deviation beam with a high probe current is formed to improve the resolution and throughput in EDX analysis, WDX analysis, or defect inspection. SOLUTION: The high prove current imaging device has a first lens 1 and a second lens 3 respectively disposed in the upper stream of the first opening 6 and the lower stream of the second opening 7 of a Wien filter 2 provided with 2xm pole elements, the intermediate imaging plane Z 1 of the first lens 1 is placed between the first opening 6 and the first lens 1, and the intermediate object plane Z 3 of the second lens 3 is placed between the second opening 7 and the second lens 3, and an image formed in the Z 1 is transferred to the Z 3 by removing the dispersion with the Wien filter. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a secondary charged particle detection system for a charged particle beam device and a method of detection of secondary charged particles in the charged particle beam device.SOLUTION: A secondary charged particle detection system for a charged particle beam device is described. The detection system includes: a beam splitter for separating a primary beam and a secondary beam formed upon impact on a specimen; a beam bender for deflecting the secondary beam; a focusing lens for focusing the secondary beam; a detection element for detecting the secondary beam particles; and three deflectors. At least a first deflector of the three deflectors is provided between the beam bender and the focusing lens, at least a second deflector of the three deflectors is provided between the focusing lens and the detection element, and at least a third deflector of the three deflectors is provided between the beam splitter and the detection element.
Abstract:
PROBLEM TO BE SOLVED: To provide a high brightness, a small virtual size, low aberrations, and good alignment, in an electron beam system.SOLUTION: A condenser lens arrangement (320) for an electron beam system is disclosed. The condenser lens arrangement includes: a magnetic condenser lens (321) adapted for generating a magnetic condenser lens field, the condenser lens having a symmetry axis (350); and a magnetic deflector (322) adapted for generating a magnetic deflector field. The magnetic deflector is configured so that the superposition of the magnetic condenser lens field and the magnetic deflector field results in an optical axis of the condenser lens arrangement being movable relative to the symmetry axis (350). Further, an electron beam optical system including a condenser lens arrangement and a method for moving a condenser lens are disclosed.
Abstract:
PROBLEM TO BE SOLVED: To provide a charged beam device with improved contrast.SOLUTION: A charged particle beam device checking a sample has a charged particle beam source (5) for generating primary charged particle beam (7), objective lens devices (40, 45) for directing the primary charged particle beam on the sample (3), a deceleration field type device for accelerating secondary charged particles emitted from the sample, and first detector devices (15, 150) having a center opening (16) and including at least two orientation detector segments detecting secondary particles. The objective lens device is constituted so that particles having different angles, at which they are emitted from the sample, exhibit a crossover at a substantially identical distance from the sample between the objective lens and the detector device, and an aperture (100) provided between the objective lens and a crossover (90) has an opening smaller than a center opening of the detector device (15).
Abstract:
PROBLEM TO BE SOLVED: To obtain excellent resolution by compensating an asymmetric component in a method where a plurality of lenses are configured by common magnetic field for throughput improvement of charged particle beam.SOLUTION: A lens system 1 to configure a plurality of lenses comprises:a first pole piece; a second pole piece; a plurality of lens apertures 16 for each of charged particle beam; a common exciting coil 20 to supply a first flux to each of lens apertures; and a compensation coil 30 arranged between the lens apertures 16. The system supplies a second flux to at least a part of lens apertures to compensate asymmetry of the first flux.
Abstract:
PROBLEM TO BE SOLVED: To provide an ion beam device of a single column which enables observation and processing of a sample. SOLUTION: This focusing ion beam device focuses the ion beam drawn out from a gas electric field ion source and irradiates it to a sample 24, and processes and observes the sample. The ion source is equipped with an emitter chip 13 which forms an ion, a heating means 15 that heats the ion, gas introduction ports 110, 112 that introduce the first gas and at least one of the second gases, and a controller 172 that switches a first emitter chip temperature and a second emitter chip temperature in order to form the ion beam of either gas. The first gas is a light gas and used for an observation mode, and the second gas of at least one is a heavy gas (inert gas, reactive gas) and used for a sputtering mode (in case of the inert gas) or a reaction mode (in case of reactive gas). COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of achieving an ion beam microscope that has high resolution and can reduce a damage to a test piece as much as possible during imaging. SOLUTION: The method of achieving an ion beam microscope comprises: a step 202 of releasing ion beams from a gas field ion source; a step 302 of supplying an ion beam energy higher than a final beam energy into an ion beam column; a step 204 of decelerating the ion beams in order to supply the final beam energy of 1 keV-4 keV when the ion beams collide with the test piece; and a step 206 of imaging the test piece. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for operating a charged particle beam irradiating device including a cold cathode field emitter having an emitter surface, especially an electron beam irradiating device. SOLUTION: The method includes the steps of: (a) placing the cold cathode field emitter in a vacuum, the cold cathode field emitter exhibiting a high initial irradiation current and a lower stable mean irradiation current under a given electric extraction field; (b) applying the given electric extraction field to the cold cathode field emitter for irradiating electrons from the emitter surface so that the irradiating current of the cold cathode field emitter becomes higher than the stable mean irradiation current; (c) performing a cleaning process by applying at least one heating pulse for heating the emitter surface to a temperature , thereby the cleaning process is performed before the irradiation current of the cold cathode field emitter is declined to a lower stable mean irradiation value; and (d) repeating the cleaning process (c) to keep the irradiation current of the cold cathode field emitter continuously exceeding the substantially stable irradiation value. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a gas electric field ion source of a charged particle beam device having a charged particle beam column, capable of high resolution. SOLUTION: The gas electric field ion source includes an emitter unit (155), a cooling unit (146), and a thermal conductivity unit for thermal conductivity from the cooling unit to the emitter unit, wherein the thermal conductivity unit is adapted for reduction of vibration transfer from the cooling unit to the emitter unit. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electric field emitter arrangement and a method for cleaning an emission surface of an electric field emitter. SOLUTION: This electric field emitter arrangement 100 is provided with an electric field emitter chip 10 having the emission surface 11 generating a primary beam 15 of charged particles and at least one electron source 20 irradiating the emission surface 11 of the electric field emitter chip 10. COPYRIGHT: (C)2007,JPO&INPIT