-
公开(公告)号：KR1020120021253A
公开(公告)日：2012-03-08
申请号：KR1020110086939
申请日：2011-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/0274 , G03F1/80 , H01L21/32139
Abstract: PURPOSE: A method for forming a micro-pattern is provided to control the inclination of a sidewall part by heating a wafer which forms a silicon oxide layer in the high temperatures. CONSTITUTION: A resist film(104) formed on an organic film(103) is patterned. A silicon dioxide film(105) is piled on a substrate in the room temperature in order to cover the organic film and the patterned resist film. Tensile stress is created on the silicon dioxide film by heating the substrate in which the silicon dioxide film is piled. A silicon nitride film is piled on the heated silicon dioxide film. A sidewall part(105a) is formed by etching the silicon dioxide film. The patterned resist film is eliminated.
Abstract translation: 目的：提供一种用于形成微图案的方法，以通过在高温下加热形成氧化硅层的晶片来控制侧壁部分的倾斜。 构成：形成在有机膜（103）上的抗蚀剂膜（104）被图案化。 在室温下将二氧化硅膜（105）堆叠在基板上，以覆盖有机膜和图案化的抗蚀剂膜。 通过加热二氧化硅膜堆叠的基板，在二氧化硅膜上产生拉伸应力。 将氮化硅膜堆叠在加热的二氧化硅膜上。 通过蚀刻二氧化硅膜形成侧壁部（105a）。 去除图案化的抗蚀剂膜。
-
公开(公告)号：KR1020060047371A
公开(公告)日：2006-05-18
申请号：KR1020050033359
申请日：2005-04-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: B08B7/0035 , C23C16/4405 , Y10S438/90
Abstract: 본 발명의 과제는 반도체 처리용 성막 장치의 사용 방법은 상기 성막 장치의 반응실 내면에 부착하는 부생성물막을 제거하는 공정을 포함하는 것이다. 여기서 상기 반응실 내에 불화수소를 포함하는 클리닝 가스를 공급하는 동시에, 상기 반응실 내를 물이 액막으로서 존재할 수 있는『제1 환경』으로 설정한다.
클리닝 가스, 성막 장치, 반응실, 히터, 배기계, 웨이퍼 보트-
公开(公告)号：KR101423019B1
公开(公告)日：2014-07-28
申请号：KR1020140008361
申请日：2014-01-23
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
Abstract: 본 발명의 과제는 측벽부의 형성의 기초가 되는 패턴을 레지스트에 의해 형성하는 경우라도, 측벽부의 기울어짐을 억제할 수 있는 미세 패턴의 형성 방법을 제공하는 것이다.
기판 상에 형성된 에칭 대상층 상에 유기막을 형성하는 유기막 형성 스텝과, 유기막 상에 레지스트막을 형성하여, 이 레지스트막을 패터닝하는 패터닝 스텝과, 패터닝된 레지스트막으로부터 노출되는 유기막과, 패터닝된 레지스트막을 덮도록 산화실리콘막을 상온에서 퇴적하는 퇴적 스텝과, 기판을 가열하여 산화실리콘막에 인장 응력을 발생시키는 가열 스텝과, 처리 스텝 후에, 패터닝된 레지스트막의 측벽에 산화실리콘막이 남도록 당해 산화실리콘막을 에칭하는 제1 에칭 스텝과, 패터닝된 레지스트막을 제거하는 제거 스텝을 포함하는 미세 패턴의 형성 방법이 개시된다.-
Patent Agency Ranking
公开(公告)号：KR101201632B1
公开(公告)日：2012-11-14
申请号：KR1020070105427
申请日：2007-10-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C8/10 , H01L21/316
CPC classification number: H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
Abstract: 본 발명의 반도체 처리용 산화 장치는, 처리 용기의 처리 영역의 한쪽측에서 피처리 기판에 근접하는 가스 공급구로부터 처리 영역에 산화성 가스 및 환원성 가스를 공급하는 가스 공급계를 포함한다. 가스 공급구는 처리 영역에 대응하는 상하 방향의 길이에 걸쳐 배열된 복수의 가스 분사 구멍을 포함한다. 처리 용기의 주위에 처리 영역을 가열하는 히터가 배치된다. 제어부는, 산화성 가스 및 환원성 가스를 반응시켜 처리 영역 내에서 산소 활성종과 수산기 활성종을 발생시키고, 산소 활성종과 수산기 활성종을 사용하여 피처리 기판의 표면에 대해 산화 처리를 행하도록 미리 설정된다.
산화 장치, 처리 영역, 처리 용기, 가스 분사 구멍, 히터-
公开(公告)号：KR101141891B1
公开(公告)日：2012-05-03
申请号：KR1020070088269
申请日：2007-08-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/20
CPC classification number: C30B33/005 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01L21/02238 , H01L21/02252 , H01L21/31662
Abstract: In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.
-
公开(公告)号：KR1020080035984A
公开(公告)日：2008-04-24
申请号：KR1020070105427
申请日：2007-10-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C8/10 , H01L21/316
CPC classification number: H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
Abstract: An oxidation apparatus and an oxidation method for a semiconductor process are provided to improve film forming ratio and in-plane uniformity, and highly maintain thickness uniformity of a film on a wafer while making it not necessary to adjust gas flow rates. An oxidation apparatus(32) for a semiconductor process comprises: a process container(34) having a process region(35) for accommodating a plurality of target substrates(W) in a state that the target substrates are vertically stacked with being spaced from one another; a gas supply system for supplying an oxidative gas and a reductive gas to the process region from a gas supply port formed adjacently to the target substrates at one side of the process region; a heater(82) disposed around the process container to heat the process region; an exhaust system(84) for exhausting gas from the process region through an exhaust port(74) formed oppositely to the gas supply port with the process region interposed between the exhaust port and the gas supply port; and a control part(92) for controlling an optional operation of the apparatus, wherein the gas supply port includes a plurality of gas ejection holes(62A,64A) arranged along a length in a vertical direction corresponding to the process region, and wherein the control part is preset to generate oxygen radicals and hydroxyl group radicals within the process region by reacting the oxidative gas and the reductive gas with each other, and to perform an oxidation process on the surfaces of the target substrates by using the oxygen radicals and the hydroxyl group radicals.
Abstract translation: 提供氧化装置和半导体工艺的氧化方法，以提高成膜比和面内均匀性，并且高度保持晶片上的膜的厚度均匀性，同时不需要调节气体流速。 一种用于半导体工艺的氧化设备（32）包括：处理容器（34），其具有处理区域（35），用于在目标衬底垂直堆叠的状态下容纳多个目标衬底（W） 另一个; 气体供给系统，用于从处理区域一侧的与靶基板相邻形成的气体供给口向工艺区域供给氧化性气体和还原性气体; 设置在处理容器周围以加热处理区域的加热器（82）; 排气系统（84），用于通过与排气口和气体供给口之间插入的处理区域与气体供给口相对地形成从排出口（74）排出来自处理区域的气体; 以及用于控制装置的可选操作的控制部分（92），其中气体供给口包括沿着对应于处理区域的垂直方向上的长度布置的多个气体喷射孔（62A，64A），并且其中 控制部分被预设为通过使氧化气体和还原气体彼此反应而在工艺区域内产生氧自由基和羟基自由基，并且通过使用氧自由基和羟基在目标衬底的表面上进行氧化过程 群体激进。
-
公开(公告)号：KR1020080022518A
公开(公告)日：2008-03-11
申请号：KR1020070089845
申请日：2007-09-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45544
Abstract: A film formation method and apparatus for a semiconductor process are provided to form a silicon oxide layer with good thickness uniformity by repeating a series of cycles of preliminary process step, an absorption step and an oxidation step. In a process region in which a first process gas comprising a film source element and not an amino group, a second process gas comprising an oxidation gas, and a third process gas comprising a preliminary process gas are selectively supplied, an oxide layer is formed on a substrate through chemical vapor deposition. A first process includes an excitation period in which the third process gas excited by an excitation device is supplied. In a second process, the first process gas is supplied, and thus the film source element is absorbed on a surface of the substrate. A third process includes an excitation period in which the second process gas excited by the excitation device is supplied, and thus the film source element absorbed on the surface of the substrate is oxidized by a radical of the generated oxidation gas.
Abstract translation: 提供半导体工艺的成膜方法和装置，通过重复一系列预处理步骤，吸收步骤和氧化步骤的循环来形成具有良好厚度均匀性的氧化硅层。 在其中选择性地提供包含膜源元件而不是氨基的第一处理气体，包括氧化气体的第二处理气体和包括预处理气体的第三处理气体的处理区域中，在 通过化学气相沉积的衬底。 第一工序包括供给由励磁装置激励的第三工艺气体的励磁时段。 在第二工序中，供给第一工艺气体，因此膜源元件被吸收在衬底的表面上。 第三工艺包括激发周期，其中由激发装置激发的第二工艺气体被供应，因此吸收在衬底表面上的膜源元件被产生的氧化气体的基团氧化。
-
公开(公告)号：KR1020060076698A
公开(公告)日：2006-07-04
申请号：KR1020050130286
申请日：2005-12-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/31 , H01L21/3065 , C23C16/44
CPC classification number: C23C16/4405 , B08B7/0035 , C23C16/401 , H01L21/31641 , H01L21/31645 , Y10S438/905
Abstract: A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.
Abstract translation: 使用用于半导体加工的成膜装置的方法包括通过清洁气体处理附着在成膜装置的反应室的内表面上的含有高介电常数材料的副产物膜作为主要成分的步骤。 这里，将清洁气体供应到反应室中并且将反应室的内部设定为第一温度和第一压力。 清洁气体不含氟，也含有氯气。 第一温度和第一压力被设定为使得清洁气体中的氯被激活。
-
-
-
-
-
-
-
Search Results
18
records
(took 0.028 seconds)
