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    플라즈마 성막 장치 및 플라즈마 성막 방법
    13.
    发明公开
    플라즈마 성막 장치 및 플라즈마 성막 방법 有权
    等离子体膜形成装置和等离子体膜形成方法

    公开(公告)号：KR1020090057095A

    公开(公告)日：2009-06-03

    申请号：KR1020097007085

    申请日：2007-09-11

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 우에다히로카즈 ,  호리고메마사히로

    IPC: H01L21/205

    CPC classification number: C23C16/511 ,  C23C16/402 ,  C23C16/45565 ,  C23C16/4558 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01L21/31608

    Abstract: Provided is a plasma filming apparatus, which can keep high not only a filming rate but also an in-plane homogeneity of a film thickness. The plasma filming apparatus comprises a treating container (44) made evacuative, a placing bed (46) for placing a treatment object (W) thereon, a ceiling plate (88) mounted in the ceiling and made of a dielectric material for transmitting microwaves, gas introducing means (54) for introducing a treating gas containing a filming raw gas and a support gas, and microwave introducing means (92) having a plain antenna member disposed on the ceiling side for introducing the microwaves. The introducing means includes central gas injection holes (112A) for the raw gas positioned above the central portion of the treatment object, and a plurality of peripheral gas injection holes (114A) for the raw gas arrayed above the peripheral portion of the treatment object and along the peripheral direction of the same. Above the treatment object and between the central gas injection holes (112A) and the peripheral gas injection holes (114A), there are disposed plasma shielding portions (130) for shielding the plasma along the peripheral direction.

    Abstract translation: 提供了一种等离子体成膜装置，其不仅可以保持高的成膜速率，而且可以保持膜厚度的面内均匀性。 等离子体成膜装置包括制成排气的处理容器（44），用于放置处理对象（W）的放置床（46），安装在天花板中并由用于传送微波的电介质材料制成的顶板（88） 用于引入含有成膜原料气体和载体气体的处理气体的气体引入装置（54）以及设置在天花板侧的用于引入微波的平面天线构件的微波引入装置（92）。 引入装置包括用于处理对象中心部分上方的原料气体的中心气体注入孔（112A）和排列在处理对象周边部分上方的原料气体的多个周边气体注入孔（114A）， 沿其周边方向。 在处理对象之上和中心气体喷射孔（112A）和周边气体喷射孔（114A）之间，设置有用于沿着周向屏蔽等离子体的等离子体屏蔽部分（130）。

    도핑 방법 및 반도체 소자의 제조 방법
    15.
    发明公开
    도핑 방법 및 반도체 소자의 제조 방법 审中-实审
    抛光方法和半导体器件制造方法

    公开(公告)号：KR1020160078880A

    公开(公告)日：2016-07-05

    申请号：KR1020150179284

    申请日：2015-12-15

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 우에다히로카즈 ,  오카마사히로 ,  고바야시유우키 ,  스기모토야스히로

    IPC: H01L21/223 ,  H01L21/265 ,  H01J37/32 ,  H01L21/225 ,  H01L29/78 ,  H01L21/8234

    CPC classification number: H01L21/2236 ,  H01L21/2256

    Abstract: 본발명은도핑직후에피처리기판의열처리를할 수없는경우라도, 컨포멀도핑을실현하는것을그 과제로한다. 본발명에따른도핑방법은피처리기판에도펀트를주입하여도핑을행하는도핑방법이다. 우선, 산화막형성공정에있어서, 도핑처리를실시하기전에, 피처리기판상에산화막을형성한다. 그리고, 피처리기판상에산화막을형성한후에, 해당산화막의위로부터플라즈마도핑처리를행한다.

    Abstract translation: 本发明的目的是进行适形掺杂，即使在掺杂后不能立即对待处理的基板进行热处理。 根据本发明，掺杂方法通过将掺杂剂注入待处理的基板来进行掺杂。 首先，在氧化膜形成工序中，在掺杂处理前的基板上形成氧化膜。 此外，在待处理的基板上形成氧化膜之后，从相应的氧化膜的顶部进行等离子体掺杂处理。

    플라즈마 도핑 장치 및 플라즈마 도핑 방법
    16.
    发明授权
    플라즈마 도핑 장치 및 플라즈마 도핑 방법 有权
    等离子喷涂装置和等离子喷涂方法

    公开(公告)号：KR101544938B1

    公开(公告)日：2015-08-17

    申请号：KR1020130159409

    申请日：2013-12-19

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 우에다히로카즈 ,  오카마사히로 ,  호리고메마사히로 ,  고바야시유우키

    IPC: H01L21/265

    CPC classification number: H01J37/32192 ,  H01J21/22 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/22

    Abstract: 본발명은피처리기판에대한안정된도핑을행할수 있고, 피처리기판에대한도우즈량의면내균일성을높일수 있는플라즈마도핑장치를제공하는것을과제로한다. 이러한플라즈마도핑장치(31)에구비되는플라즈마발생기구(39)는, 플라즈마여기용의마이크로파를발생시키는마이크로파발생기(35)와, 마이크로파발생기(35)에의해발생시킨마이크로파를처리용기(32) 내에투과시키는유전체창(36)과, 복수의슬롯이마련되어있고, 마이크로파를유전체창(36)에방사하는레이디얼라인슬롯안테나(37)를포함한다. 제어부(28)는, 유지대(34) 상에피처리기판(W)을배치시킨상태로, 처리용기(32) 내에가스공급부(33)에의해도핑가스및 플라즈마여기용의가스를공급하고, 가스공급부(33)에의해도핑가스및 플라즈마여기용의가스를공급한후에플라즈마발생기구(39)에의해플라즈마를발생시켜피처리기판(W)에도핑을행하며, 피처리기판(W)에주입되는도펀트의농도가 1×10atoms/㎠미만이되도록제어한다.

    플라즈마 도핑 장치, 플라즈마 도핑 방법, 및 반도체 소자의 제조 방법
    17.
    发明公开
    플라즈마 도핑 장치, 플라즈마 도핑 방법, 및 반도체 소자의 제조 방법 审中-实审
    等离子喷涂装置，等离子喷涂方法和制造半导体装置的方法

    公开(公告)号：KR1020140043677A

    公开(公告)日：2014-04-10

    申请号：KR1020130115028

    申请日：2013-09-27

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 오카마사히로 ,  고바야시유우키 ,  우에다히로카즈 ,  호리고메마사히로

    IPC: H01J37/317 ,  H01L21/265

    CPC classification number: H01L21/22 ,  H01L21/2236 ,  H01L21/67011 ,  H01L21/67109 ,  H01L21/6831 ,  H01L29/66803

    Abstract: Provided is a plasma doping apparatus which performs doping without deforming a substrate before and after the doping with good conformaility, and makes the injected dopants be not separated in a process of cleaning after the doping. A control unit (28), which is formed to the plasma doping apparatus, controls a pressure control unit to make the pressure in a processing container (32) be a first pressure, controls a bias power supply unit to make a bias power which is supplied to a maintenance unit (34) be a first bias power; performs a first plasma processing on a substrate (W) which is to be processed by the plasma generated by a plasma generation unit (39); controls the pressure control unit to make the pressure within the processing container be a second pressure which is higher than the first pressure after the first plasma processing; controls the bias power supply unit to make the bias power supplied to the maintenance unit to be a second bias power which is lower than the first bias power; and performs a second plasma processing on the target substrate by the plasma generated by the plasma generation unit.

    Abstract translation: 提供了一种等离子体掺杂装置，其在良好的适形性下，在掺杂前后进行掺杂而不使基板发生变形，并且使得注入的掺杂剂在掺杂后的清洗过程中不分离。 形成在等离子体掺杂装置上的控制单元（28）控制压力控制单元使处理容器（32）中的压力为第一压力，控制偏压供电单元以产生偏压功率 提供给维护单元（34）的是第一偏置功率; 对由等离子体产生单元（39）产生的等离子体进行处理的基板（W）进行第一等离子体处理。 控制所述压力控制单元使得所述处理容器内的压力为所述第一等离子体处理之后的所述第一压力以上的第二压力; 控制所述偏置电源单元，使提供给所述维护单元的偏置功率为低于所述第一偏置功率的第二偏置功率; 并且通过由等离子体产生单元产生的等离子体对目标衬底进行第二等离子体处理。

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