中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

58 records (took 0.032 seconds)

    반도체 웨이퍼 보호용 백그라인딩 보호 필름
    11.
    发明公开
    반도체 웨이퍼 보호용 백그라인딩 보호 필름 无效
    用于半导体波形的保护膜在背景中

    公开(公告)号：KR1020140118378A

    公开(公告)日：2014-10-08

    申请号：KR1020130034162

    申请日：2013-03-29

    Applicant: 제일모직주식회사

    Inventor： 김지호 ,  양승용 ,  유용식 ,  조경래 ,  최재원

    IPC: H01L21/304 ,  H01L21/301

    Abstract: A back grinding protection film for protecting a semiconductor wafer is disclosed. The back grinding protection film for protecting a semiconductor wafer, as a back grinding protection film for protecting a semiconductor wafer where a buffer layer and an adhesive layer are stacked on a base material film, features that elastic modulus of indentation of the buffer layer at 25°C can be increased four to eighty times by ultraviolet irradiation.

    Abstract translation: 公开了一种用于保护半导体晶片的背面磨削保护膜。 用于保护半导体晶片的背面磨削保护膜作为用于保护半导体晶片的背面研磨保护膜，其中缓冲层和粘合剂层堆叠在基材膜上，其特征在于缓冲层的压缩弹性模量为25 通过紫外线照射可以提高四至八十次。

    반도체용 접착 조성물 및 이를 포함하는 접착 필름
    13.
    发明公开
    반도체용 접착 조성물 및 이를 포함하는 접착 필름 无效
    用于半导体的粘合组合物，包括其的粘合膜

    公开(公告)号：KR1020140076785A

    公开(公告)日：2014-06-23

    申请号：KR1020120145220

    申请日：2012-12-13

    Applicant: 제일모직주식회사

    Inventor： 이준우 ,  김성민 ,  김진만 ,  김혜진 ,  위경태 ,  최재원

    IPC: C09J7/02 ,  C09J163/00 ,  H01L21/02

    CPC classification number: C09J7/22 ,  C09J7/30 ,  C09J163/00 ,  C09J2201/60 ,  C09J2203/326 ,  H01L21/02002 ,  H01L21/6836

    Abstract: The present invention relates to an adhesive composition for a semiconductor and an adhesive film including the same, and more specifically, to an adhesive composition for a semiconductor with viscosity of 7000 Pa·s or less at 80 deg. C and 5000 Pa·s or less at 100 deg. C. According to one embodiment of the present invention, the adhesive composition for a semiconductor with a 0-10% of void area is obtained by bonding the film at 100-130 deg. C for 1-60 seconds and hardening the film at 125-150 deg. C for 10-60 minutes.

    Abstract translation: 本发明涉及一种半导体用粘合剂组合物及其粘合膜，更具体地说，涉及在80度下粘度为7000Pa·s以下的半导体用粘合剂组合物。 C和5000Pa·s以下。 C.根据本发明的一个实施方案，通过在100-130度粘合该膜，获得具有0-10％空隙面积的半导体用粘合剂组合物。 C，持续1-60秒，并在125-150度硬化该膜。 C 10-60分钟。

    반도체용 접착 필름
    18.
    发明公开
    반도체용 접착 필름 无效
    半导体贴膜

    公开(公告)号：KR1020120065892A

    公开(公告)日：2012-06-21

    申请号：KR1020100127234

    申请日：2010-12-13

    Applicant: 제일모직주식회사

    Inventor： 박정범 ,  어동선 ,  송기태 ,  최재원 ,  박백성 ,  김인환

    IPC: C09J7/02 ,  C09J11/04 ,  H01L21/58 ,  H01L21/683

    CPC classification number: C09J7/22 ,  C09J7/26 ,  C09J11/04 ,  C09J2201/36 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/102 ,  H01L21/6836 ,  H01L2221/68327

    Abstract: PURPOSE: An adhesive film for semiconductor is provided to have double-layered structure which have different physical properties from each other, thereby having excellent separation properties in dicing process and excellent wire penetration performance in packaging process, and capable of remarkably reducing foamable void. CONSTITUTION: An adhesive film for semiconductor comprises a first adhesive layer(102) in which silica(112) with first average diameter is contained, a second adhesive layer(104) in which silica(114) with second average diameter larger than the first average diameter, laminated on the first adhesive layer. The modulus ratio of the first adhesive layer to the second adhesive layer at 150°C is 1-5. The silica is spherical silica. The first average diameter is 0.01-1.0 micron. The second average diameter is 0.1-5.0 micron. The silica content of the first adhesive layer is 20-40 weight% based on the whole first adhesive layer.

    Abstract translation: 目的：提供一种用于半导体的粘合膜以具有彼此具有不同物理性质的双层结构，从而在切割过程中具有优异的分离性能和优异的包装工艺中的丝穿透性能，并且能够显着降低发泡性空隙。 构成：用于半导体的粘合膜包括其中包含第一平均直径的二氧化硅（112）的第一粘合剂层（102），第二粘合剂层（104），其中第二平均直径大于第一平均直径的二氧化硅（114） 直径，层压在第一粘合剂层上。 第一粘合剂层与第二粘合层在150℃下的模量比为1-5。 二氧化硅是球形二氧化硅。 第一个平均直径为0.01-1.0微米。 第二平均直径为0.1-5.0微米。 第一粘合剂层的二氧化硅含量相对于整个第一粘合剂层为20-40重量％。

    반도체 소자 언더필용 액상 에폭시 수지 조성물 및 이를이용한 반도체 소자
    19.
    发明授权
    반도체 소자 언더필용 액상 에폭시 수지 조성물 및 이를이용한 반도체 소자 有权
    用于不充分的半导体器件的液体环氧树脂组合物和使用其的半导体器件

    公开(公告)号：KR100823073B1

    公开(公告)日：2008-04-18

    申请号：KR1020060139233

    申请日：2006-12-31

    Applicant: 제일모직주식회사

    Inventor： 최재원 ,  김진모

    IPC: C08L63/00 ,  C08K9/00

    Abstract: A liquid epoxy resin composition for underfilling a semiconductor device, and a semiconductor device prepared by using the composition are provided to improve adhesive strength, reliance and workability. A liquid epoxy resin composition comprises 5-50 wt% of an epoxy resin having at least two epoxy groups in a molecule; 5-50 wt% of a curing agent which reacts with the epoxy resin to form a cured product; 0.5-10 wt% of a curing accelerator which promotes the reaction of the curing agent; 20-80 wt% of an inorganic filler; and 1-10 wt% of a nitrobutadiene rubber-based additive represented by the formula, wherein R1 to R5 are independently H, a C1-C20 alkyl group or an aryl group; n and m are an integer of 0-10, but n and m cannot be 0 simultaneously; and x is an integer of 1-10.

    Abstract translation: 提供用于底部填充半导体器件的液体环氧树脂组合物和使用该组合物制备的半导体器件，以提高粘合强度，依赖性和可加工性。 液体环氧树脂组合物包含5-50重量％的在分子中具有至少两个环氧基团的环氧树脂; 5-50重量％的与环氧树脂反应形成固化产物的固化剂; 0.5-10重量％的促进固化剂反应的固化促进剂; 20-80重量％的无机填料; 和1-10重量％的由下式表示的硝基丁二烯橡胶基添加剂，其中R1至R5独立地为H，C1-C20烷基或芳基; n和m是0-10的整数，但n和m不能同时为0; x为1-10的整数。

Patent Agency Ranking