公开(公告)号：AU2572802A

公开(公告)日：2002-06-11

申请号：AU2572802

申请日：2001-11-14

Applicant: ADVANCED TECH MATERIALS

Inventor： STAUF GREGORY T ,  CHEN PHILIP S ,  ROEDER JEFFREY F

IPC: C23C16/40 ,  H01L21/314 ,  H01L21/316

Abstract: A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1x10-3 A/cm2 under applied voltage of about ±3V or above and at temperature of about 100° C. or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature in the range from about 560° C. to 700° C.

公开(公告)号：AU8377498A

公开(公告)日：1999-01-19

申请号：AU8377498

申请日：1998-06-26

Applicant: ADVANCED TECH MATERIALS ,  SIEMENS AG

Inventor： HINTERMAIER FRANK S ,  DEHM CHRISTINE ,  HOENLEIN WOLFGANG ,  BUSKIRK PETER C VAN ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA A

IPC: B32B9/00 ,  C01G35/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  C23C16/00

Abstract: A low temperature CVD process using a tris (beta-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

公开(公告)号：AU2003301333A8

公开(公告)日：2004-05-04

申请号：AU2003301333

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： STAWASZ MICHELE ,  CHEN SHIN ING ,  NEUNER JEFFREY W ,  KING MACKENZIE E ,  ROEDER JEFFREY F ,  WELCH JAMES ,  DIMEO FRANK ,  BAUM THOMAS H ,  CHEN PHILIP S H

IPC: G01N33/00 ,  G01N9/00

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：AU2003301333A1

公开(公告)日：2004-05-04

申请号：AU2003301333

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN SHIN ING ,  ROEDER JEFFREY F ,  DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE

IPC: G01N33/00

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：AU2002367291A1

公开(公告)日：2003-07-24

申请号：AU2002367291

申请日：2002-12-13

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  MINSEK DAVID W ,  ROEDER JEFFREY F ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: B08B7/00 ,  C11D3/02 ,  C11D3/43 ,  C11D7/02 ,  C11D11/00 ,  G03F7/40 ,  G03F7/42 ,  C11D1/02 ,  C11D3/44 ,  D06L1/02 ,  C25F3/12 ,  C25F3/30

Abstract: Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

公开(公告)号：WO2007133837A3

公开(公告)日：2008-03-13

申请号：PCT/US2007063832

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Abstract translation: 一种用于在基板上形成相变记忆材料的系统和方法，其中，在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

公开(公告)号：WO2006101897A2

公开(公告)日：2006-09-28

申请号：PCT/US2006009330

申请日：2006-03-15

Applicant: ADVANCED TECH MATERIALS ,  CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

Inventor： CHEN ING-SHIN ,  NEUNER JEFFREY W ,  DIMEO FRANK JR ,  CHEN PHILIP S H ,  WELCH JAMES ,  ROEDER JEFFREY F

IPC: H01L21/302 ,  C23F1/00 ,  G01L21/30

CPC classification number: B81C1/00587 ,  B81C99/0065 ,  B81C2201/0138 ,  C23C16/4405 ,  G01N27/16 ,  H01J37/32935

Abstract: A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.

Abstract translation: 一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型 等离子体。 这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号 用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

公开(公告)号：WO2005081933A3

公开(公告)日：2006-09-08

申请号：PCT/US2005005609

申请日：2005-02-23

Applicant: ADVANCED TECH MATERIALS ,  HENDRIX BRYAN C ,  WELCH JAMES J ,  BILODEAU STEVEN M ,  ROEDER JEFFREY F ,  XU CHONGYING ,  BAUM THOMAS H

Inventor： HENDRIX BRYAN C ,  WELCH JAMES J ,  BILODEAU STEVEN M ,  ROEDER JEFFREY F ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C23C16/00 ,  C23C16/02 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/45557 ,  C23C16/0272 ,  C23C16/16 ,  C23C16/18

Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

Abstract translation: 描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。 该方法包括沉积钌成核层，随后沉积高度导电的钌上层。 使用低沉积速率的化学气相沉积（CVD）沉积两层。

公开(公告)号：WO2005019797A3

公开(公告)日：2005-09-22

申请号：PCT/US2004025339

申请日：2004-08-05

Applicant: ADVANCED TECH MATERIALS ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  TOM GLENN M ,  ARNO JOSE I ,  BAUM THOMAS H ,  ROEDER JEFFREY F ,  HILLS JAMES R

Inventor： MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  TOM GLENN M ,  ARNO JOSE I ,  BAUM THOMAS H ,  ROEDER JEFFREY F ,  HILLS JAMES R

IPC: G01N21/78 ,  G01N21/00 ,  B01L3/00 ,  B01L3/02 ,  B01L9/00 ,  B01L11/00 ,  G01N15/06 ,  G01N33/00 ,  G01N33/48

CPC classification number: G01N21/783

Abstract: A windowed chamber, e.g., a semiconductor manufacturing process chamber such as a scrubber, deposition chamber, thermal reactor, or the like, including a port with a radiation-transmissive window therein. Interiorly disposed within the chamber is (i) a disposable film on an interior surface of the window and/or (ii) a colorimetric medium disposed in viewable relationship to the window, so that a colorimetric change is perceivable through the window, e.g., visually or by optical sensing device, when the colorimetric medium is exposed to target gas species. Also disclosed is a gas detection article including a polymeric material that is colorimetrically responsive to the presence of at least one target gas species, in exposure thereto.

Abstract translation: 诸如洗涤器，沉积室，热反应器等半导体制造处理室的窗口化室，包括其中具有辐射透射窗口的端口。 内部设置在腔室内的是（i）窗口内表面上的一次性薄膜和/或（ii）以与窗口可视的关系设置的比色介质，使得可以通过窗口察觉比色变化，例如，视觉上 或通过光学感测装置，当比色介质暴露于目标气体种类时。 还公开了一种气体检测制品，其包括在暴露于其中时比色测定至少一种目标气体种类的存在的聚合物材料。

公开(公告)号：WO2004036175B1

公开(公告)日：2004-07-22

申请号：PCT/US0332521

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Abstract translation: 一种气体检测器（54）和用于检测含有它的气体中的含氟物质的方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的结构布置中的检测器采用微机电 基于系统（MEMS）的器件结构和/或独立的金属元件（8），当需要高温感测时，其用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。