公开(公告)号：WO2010120954A3

公开(公告)日：2011-03-24

申请号：PCT/US2010031125

申请日：2010-04-14

Applicant: ADVANCED TECH MATERIALS ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  STAUF GREGORY T ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  XU CHONGYING

Inventor： ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  STAUF GREGORY T ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  XU CHONGYING

IPC: H01G4/018

CPC classification number: H01G4/1209 ,  C04B35/49 ,  C04B35/491 ,  C04B35/6325 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/441 ,  C04B2235/449 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/1254 ,  H01G4/20 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/3142 ,  H01L28/40 ,  Y10T428/12493 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/1284

Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.

Abstract translation: 包括早期过渡金属或金属氧化物基材以及选自Nb，Ge，Ta，La，Y，Ce，Pr，Nd，Gd，Dy中的掺杂剂，共沉积，合金化或分层次级材料的复合电介质材料 ，Sr，Ba，Ca和Mg，以及这些金属的氧化物，以及作为掺杂剂或合金化二次材料的氧化铝。 这种复合电介质材料可以通过使用合适的前体的气相沉积工艺（例如ALD）形成微电子器件，例如铁电高k电容器，栅极结构，DRAM等。

公开(公告)号：WO2009059237A3

公开(公告)日：2009-09-24

申请号：PCT/US2008082134

申请日：2008-10-31

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

IPC: C07F9/94

CPC classification number: C07F9/94

Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (

Abstract translation: 具有用于通过低温（<300℃）气相沉积方法如CVD和ALD形成高保形含铋膜的铋前体，包括氨基铋，胍铋酸盐，异钌酸铋，氨基甲酸铋和硫代氨基甲酸铋，β-二酮铋酸铋 铋铋，二酮铋，铋铋，铋基铋，烷氧基铋，铋配合物，铋甲硅烷基酰胺，铋螯合酰胺和铋二碲酰亚胺二磷酸铋。 还描述了制备这种前体的方法，以及适用于制造微电子器件产品的这种前体的包装形式。 这些铋前体有利地用于形成含铋的膜，例如GBT，Bi2Te3，Bi4Ti3O12，SrBi2Ta2O9，Bi-Ta-O，BiP和含热电铋膜的膜。

公开(公告)号：WO2008128141A3

公开(公告)日：2009-01-08

申请号：PCT/US2008060162

申请日：2008-04-13

Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  ROEDER JEFFREY F ,  CHEN TIANNIU ,  HENDRIX BRYAN C ,  BENAC BRIAN ,  CAMERON THOMAS M ,  PETERS DAVID W ,  STAUF GREGORY T ,  MAYLOTT LEAH

Inventor： XU CHONGYING ,  ROEDER JEFFREY F ,  CHEN TIANNIU ,  HENDRIX BRYAN C ,  BENAC BRIAN ,  CAMERON THOMAS M ,  PETERS DAVID W ,  STAUF GREGORY T ,  MAYLOTT LEAH

IPC: C23C16/30 ,  C07F7/00 ,  C23C16/00

CPC classification number: C07F7/006 ,  C07C211/65 ,  C07F17/00 ,  C23C16/18 ,  C23C16/405

Abstract: Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium- containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.

Abstract translation: 分别用于相应的含锆，含铪，含钛和含硅膜的原子层沉积（ALD）和化学气相沉积（CVD）的锆，铪，钛和硅前体。 所公开的前体实现了以最小碳掺入为特征的高度保形的沉积膜。

公开(公告)号：EP2018642A4

公开(公告)日：2009-05-27

申请号：EP07758385

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00 ,  C23C16/30

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：EP2021528A4

公开(公告)日：2011-03-23

申请号：EP07761374

申请日：2007-04-26

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

IPC: C25B7/00

CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

公开(公告)号：EP2078102A4

公开(公告)日：2010-11-24

申请号：EP07758383

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C07F7/30 ,  C23C16/22 ,  H01L45/00

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683