公开(公告)号：US20230004095A1

公开(公告)日：2023-01-05

申请号：US17941378

申请日：2022-09-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Rizvi RAHMAN ,  Hakki Ergün CEKLI ,  Cédric Désiré GROUWSTRA

IPC: G03F7/20 ,  G05B19/418 ,  H01L21/66

Abstract: A device manufacturing method, the method comprising: obtaining a measurement data time series of a plurality of substrates on which an exposure step and a process step have been performed; obtaining a status data time series relating to conditions prevailing when the process step was performed on at least some of the plurality of substrates; applying a filter to the measurement data time series and the status data time series to obtain filtered data; and determining, using the filtered data, a correction to be applied in an exposure step performed on a subsequent substrate.

公开(公告)号：US20220011681A1

公开(公告)日：2022-01-13

申请号：US17482630

申请日：2021-09-23

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergün CEKLI ,  Xing Lan Liu ,  Stefan Cornelis Theodorus VAN DER SANDEN ,  Richard Johannes Franciscus VAN HAREN

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes exposing number of fields on a substrate, obtaining data about a field and correcting exposure of the field in subsequent exposures. The method includes defining one or more sub-fields of the field based on the obtained data. Data relating to each sub-field is processed to produce sub-field correction information. A subsequent exposure of the one or more sub-fields is corrected using the sub-field correction information. By controlling a lithographic apparatus by reference to data of a particular sub-field within a field, overlay error can be reduced or minimized for a critical feature, rather than being averaged over the whole field. By controlling a lithographic apparatus with reference to a sub-field rather than only the whole field, a residual error can be reduced in each sub-field.

公开(公告)号：US20210132508A1

公开(公告)日：2021-05-06

申请号：US16640088

申请日：2018-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Cyrus Emil TABERY ,  Hakki Ergün CEKLI ,  Simon, Hendreik Celine VAN GORP ,  Chenxi Lin

IPC: G03F7/20 ,  H01L21/66

Abstract: A method for determining a control parameter for an apparatus used in a semiconductor manufacturing process, the method including: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data including values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data Advantageously, the efficiency and/or accuracy of processes is improved by determining how to perform the processes in dependence on dies within specification.

公开(公告)号：US20200166854A1

公开(公告)日：2020-05-28

申请号：US16637792

申请日：2018-07-12

Applicant: ASML NETHERLANDS B.V

Inventor： Hadi YAGUBIZADE ,  Ahmet Koray ERDAMAR ,  Hakki Ergün CEKLI

IPC: G03F7/20

Abstract: A method for correcting values of one or more feed-forward parameters used in a process of patterning substrates, the method including: obtaining measured overlay and/or alignment error data of a patterned substrate; and calculating one or more correction values for the one or more feed-forward parameters in dependence on the measured overlay and/or alignment error data.

公开(公告)号：US20220035259A1

公开(公告)日：2022-02-03

申请号：US17501911

申请日：2021-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün CEKLI ,  Masashi ISHIBASHI ,  Wendy Johanna Martina VAN DE VEN ,  Willem Seine Christian ROELOFS ,  Elliott Gerard MC NAMARA ,  Rizvi RAHMAN ,  Michiel KUPERS ,  Emil Peter SCHMITT-WEAVER ,  Erik Henri Adriaan DELVIGNE

IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US20210325788A1

公开(公告)日：2021-10-21

申请号：US17363057

申请日：2021-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander YPMA ,  Cyrus Emil TABERY ,  Simon Hendrik Celine VAN GORP ,  Chenxi LIN ,  Dag SONNTAG ,  Hakki Ergün CEKLI ,  Ruben ALVAREZ SANCHEZ ,  Shih-Chin LIU ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Christiaan Theodoor DE RUITER ,  Peter TEN BERGE ,  Michael James LERCEL ,  Wei DUAN ,  Pierre-Yves Jerome Yvan GUITTET

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US20210157247A1

公开(公告)日：2021-05-27

申请号：US16493326

申请日：2018-04-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander YPMA ,  Vahid BASTANI ,  Dag SONNTAG ,  Jelle NIJE ,  Hakki Ergün CEKLI ,  Georgios TSIROGIANNIS ,  Robert Jan VAN WIJK

IPC: G03F7/20

Abstract: A method of maintaining a set of fingerprints representing variation of one or more process parameters across wafers subjected to a device manufacturing method, the method including: receiving measurement data of one or more parameters measured on wafers; updating the set of fingerprints based on an expected evolution of the one or more process parameters; and evaluation of the updated set of fingerprints based on decomposition of the received measurement data in terms of the updated set of fingerprints. Each fingerprint may have a stored likelihood of occurrence, and the decomposition may involve: estimating, based the received measurement data, likelihoods of occurrence of the set of fingerprints in the received measurement data; and updating the stored likelihoods of occurrence based on the estimated likelihoods.

公开(公告)号：US20200081356A1

公开(公告)日：2020-03-12

申请号：US16686418

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Sudharshanan RAGHUNATHAN ,  Boris MENCHTCHIKOV ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN'T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20190137892A1

公开(公告)日：2019-05-09

申请号：US16098165

申请日：2017-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün CEKLI ,  Masashi ISHIBASHI ,  Wendy Johanna Marthina VAN DE VEN ,  Willem Seine Christian ROELOFS ,  Elliott Gerard MC NAMARA ,  Rizvi RAHMAN ,  Michiel KUPERS ,  Emil Peter SCHMITT-WEAVER ,  Erilk Henri Adriaan DELVIGNE

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/956 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US20180314168A1

公开(公告)日：2018-11-01

申请号：US15769339

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Everhardus Cornelis MOS ,  Peter TEN BERGE ,  Peter Hanzen WARDENIER ,  Erik JENSEN ,  Hakki Ergün CEKLI

IPC: G03F7/20 ,  G05B19/418

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.