公开(公告)号：WO2019233738A1

公开(公告)日：2019-12-12

申请号：PCT/EP2019/062767

申请日：2019-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TRIPODI, Lorenzo ,  WARNAAR, Patrick ,  GRZELA, Grzegorz ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad ,  TINNEMANS, Patricius, Aloysius Jacobus ,  MIDDLEBROOKS, Scott, Anderson ,  KOOPMAN, Adrianus, Cornelis, Matheus ,  STAALS, Frank ,  PETERSON, Brennan ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

公开(公告)号：WO2019063206A1

公开(公告)日：2019-04-04

申请号：PCT/EP2018/072605

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick ,  SLACHTER, Abraham ,  ANUNCIADO, Roy ,  VAN GORP, Simon, Hendrik, Celine ,  STAALS, Frank ,  JOCHEMSEN, Marinus

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image -related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：WO2017102327A1

公开(公告)日：2017-06-22

申请号：PCT/EP2016/079219

申请日：2016-11-30

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  ZHANG, Youping ,  DEN BOEF, Arie, Jeffrey ,  XIAO, Feng ,  EBERT, Martin

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70633 ,  G01N21/956

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

Abstract translation: 一种方法包括将照射的照射束投射到衬底上的度量目标上，检测从衬底上的度量目标反射的辐射，并且基于检测到的确定衬底上的特征的特征 辐射，其中检测到的辐射的偏振状态被可控地选择以优化检测到的辐射的质量。

公开(公告)号：WO2021160380A1

公开(公告)日：2021-08-19

申请号：PCT/EP2021/051002

申请日：2021-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： HUBAUX, Arnaud ,  WARNAAR, Patrick ,  MIDDLEBROOKS, Scott, Anderson ,  COLLIGNON, Tijmen, Pieter ,  LI, Chung-Hsun ,  TSIROGIANNIS, Georgios ,  SHAKERI, Sayyed, Mojtaba

IPC: G03F7/20

Abstract: A method of determining matching performance between tools used in semiconductor manufacture and associated tools is described. The method comprises obtaining a plurality of data sets related to a plurality of tools and a representation of said data sets in a reduced space having a reduced dimensionality. A matching metric and/or matching correction is determined based on matching said reduced data sets in the reduced space.

公开(公告)号：WO2021104718A1

公开(公告)日：2021-06-03

申请号：PCT/EP2020/077115

申请日：2020-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： MIDDLEBROOKS, Scott, Anderson ,  WARNAAR, Patrick ,  HELFENSTEIN, Patrick, Philipp ,  KONIJNENBERG, Alexander, Prasetya ,  PISARENCO, Maxim ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria

IPC: G03F7/20 ,  G06K9/36 ,  G06N3/02 ,  G06N3/04 ,  G06N20/00 ,  G06T7/00

Abstract: A method and system for predicting complex electric field images with a parameterized model are described. A latent space representation of a complex electric field image is determined based on dimensional data in a latent space of the parameterized model for a given input to the parameterized model. The given input may be a measured amplitude (e.g., intensity) associated with the complex electric field image. The complex electric field image is predicted based on the latent space representation of the complex electric field image. The predicted complex electric field image includes an amplitude and a phase. The parameterized model comprises encoder-decoder architecture. In some embodiments, determining the latent space representation of the electric field image comprises minimizing a function constrained by a set of electric field images that could be predicted by the parameterized model based on the dimensional data in the latent space and the given input.

公开(公告)号：WO2021052772A1

公开(公告)日：2021-03-25

申请号：PCT/EP2020/074621

申请日：2020-09-03

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V. ,  STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN ,  STICHTING VU ,  UNIVERSITEIT VAN AMSTERDAM

Inventor： KOOLEN, Armand, Eugene, Albert ,  KREUZER, Justin ,  MEHTA, Nikhil ,  WARNAAR, Patrick ,  TENNER, Vasco, Tomas ,  TINNEMANS, Patricius, Aloysius Jacobus ,  CRAMER, Hugo

IPC: G03F7/20 ,  G01N21/956

Abstract: Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.

公开(公告)号：WO2020025231A1

公开(公告)日：2020-02-06

申请号：PCT/EP2019/067533

申请日：2019-07-01

Applicant: STICHTING VU ,  STICHTING NEDERLANDSE WETENSCHAPPELIJK ONDERZOEK INSTITUTEN ,  UNIVERSITEIT VAN AMSTERDAM ,  ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  WARNAAR, Patrick ,  TENNER, Vasco, Tomas ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20

Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

公开(公告)号：WO2018010979A1

公开(公告)日：2018-01-18

申请号：PCT/EP2017/066297

申请日：2017-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  BOZKURT, Murat ,  WARNAAR, Patrick ,  VAN DER SANDEN, Stefan, Cornelis, Theodorus

IPC: G03F7/20

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.

Abstract translation: 描述了一种方法和装置，用于提供光刻特性或测量参数的准确且稳健的测量。 该方法包括为度量衡目标的多个度量衡参数中的每一个提供一个或多个值，为多个度量衡参数中的每一个提供约束，并且由处理器计算以优化/修改 导致多个具有满足约束的度量参数的度量目标设计。

公开(公告)号：WO2017144270A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/052680

申请日：2017-02-08

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  HASTINGS, Simon, Philip, Spencer ,  DA COSTA ASSAFRAO, Alberto ,  MACHT, Lukasz, Jerzy

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70616

Abstract: An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1-, p1, p1+; λ1-, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.

Abstract translation: 检验装置（140）测量由衬底上的光刻工艺形成的目标结构（T）的不对称性或其他性质。 对于给定的一组照明条件，所述测量的准确度受整个衬底和/或衬底之间的工艺变化的强烈影响。 该设备被布置为在所述照射条件（p1-，p1，p1 +;λ1-，λ1，λ1+）的两个或更多个变体下收集由多个结构散射的辐射。 处理系统（PU）被布置为使用针对所述结构中的不同结构在所述变体的不同选择或组合下收集的辐射来导出对所述性质的测量。 变体例如可以是波长，或角度分布，或者照明条件的任何特性。 参考在不同变体中观察到的信号质量（302，Q，A）进行变体的选择和/或组合。

公开(公告)号：WO2012062501A1

公开(公告)日：2012-05-18

申请号：PCT/EP2011/066038

申请日：2011-09-15

Applicant: ASML NETHERLANDS B.V. ,  SMILDE, Hendrik ,  WARNAAR, Patrick

Inventor： SMILDE, Hendrik ,  WARNAAR, Patrick

IPC: G03F7/20

CPC classification number: G03F9/00 ,  G03F7/70483 ,  G03F7/70633

Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.

Abstract translation: 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅或其他结构小于测量光学系统的照明点和视场。 组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。 可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。 测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。 可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如允许在半导体器件制造过程中更准确地过度测量。