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公开(公告)号:MY164859A
公开(公告)日:2018-01-30
申请号:MYPI2013000780
申请日:2011-09-06
Applicant: BASF SE
Inventor: LI YUZHUO , CHU JEA-JU , VENKATARAMAN SHYAM SUNDAR , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE
Abstract: AN AQUEOUS POLISHING COMPOSITION COMPRISING (A) ABRASIVE PARTICLES WHICH ARE POSITIVELY CHARGED WHEN DISPERSED IN AN AQUEOUS MEDIUM HAVING A PH IN THE RANGE OF FROM 3 TO 9 AS EVIDENCED BY THE ELECTROPHORETIC MOBILITY; (B) WATER-SOLUBLE AND WATER-DISPERSIBLE HYDROXY GROUP CONTAINING COMPONENTS SELECTED FROM (B1) ALIPHATIC AND CYCLOALIPHATIC HYDROXYCARBOXYLIC ACIDS, WHEREIN THE MOLAR RATIO OF HYDROXY GROUPS TO CARBOXYLIC ACID GROUPS IS AT LEAST 1; (B2) ESTERS AND LACTONES OF THE HYDROXYCARBOXYLIC ACIDS (B1) HAVING AT LEAST ONE HYDROXY GROUP; AND (B3) MIXTURES THEREOF; AND (C) WATER-SOLUBLE AND WATER-DISPERSIBLE POLYMER COMPONENTS SELECTED FROM (C1) LINEAR AND BRANCHED ALKYLENE OXIDE POLYMERS; (C2) LINEAR AND BRANCHED, ALIPHATIC AND CYCLOALIPHATIC POLY(N-VINYLAMIDE) POLYMERS; AND (C3) CATIONIC POLYMERIC FLOCCULANTS HAVING A WEIGHT AVERAGE MOLECULAR WEIGHT OF LESS THAN 100,000 DALTON.; AND A PROCESS FOR POLISHING SUBSTRATE MATERIALS FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES.
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公开(公告)号:SG10201506215WA
公开(公告)日:2015-09-29
申请号:SG10201506215W
申请日:2011-09-06
Applicant: BASF SE
Inventor: NOLLER BASTIAN , FRANZ DIANA , LI YUZHUO , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE , VENKATARAMAN SHYAM SUNDAR
Abstract: An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N'-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
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13.
公开(公告)号:MY176981A
公开(公告)日:2020-08-31
申请号:MYPI2015000013
申请日:2013-06-21
Applicant: BASF SE
Inventor: LAUTER MICHAEL , CHIU WEI LAN WILLIAM , REICHARDT ROBERT , LI YUZHUO
Abstract: A chemical mechanical polishing composition comprising: (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped, (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of a substrate used in the semiconductor industry in the presence of a CMP composition and the use of CMP composition thereof are also provided.
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公开(公告)号:MY175638A
公开(公告)日:2020-07-03
申请号:MYPI2015002194
申请日:2011-09-05
Applicant: BASF SE
Inventor: CHU JEA-JU , LI YUZHUO , VENKATARAMAN SHYAM SUNDAR , PINDER HARVEY WAYNE , CHIU WEI LAN WILLIAM
Abstract: An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility;(B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
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公开(公告)号:RU2643541C9
公开(公告)日:2018-03-16
申请号:RU2015103813
申请日:2013-06-21
Applicant: BASF SE
Inventor: RAJKHARDT ROBERT , LI YUZHUO , LAUTER MIKHAEL , CHIU VEJ LAN UILYAM
Abstract: Изобретениеотноситсяк композициидляхимико-механическойполировки (СМР). Композициясодержит (А) неорганическиечастицы, органическиечастицыилиихсмесь, илиихкомпозит, гдечастицынаходятсяв формекокона, (В) амфифильноенеионноеповерхностно-активноевеществонаосновеполиоксиэтилен-полиоксипропиленовогоалкиловогопростогоэфирав видесмесимолекул, содержащихв среднемалкильнуюгруппу, имеющуюот 10 до 16 атомовуглерода, от 5 до 20 оксиэтиленовыхмономерныхзвеньев (b21) иот 2 до 8 оксипропиленовыхмономерныхзвеньев (b22) вслучайномраспределении, (C) карбонатнуюилигидрокарбонатнуюсоль, (D) спирти (М) воднуюсреду. Такжеописаныспособполученияполупроводниковыхустройств, включающийхимико-механическуюполировкуподложки, применяемойв полупроводниковойпромышленности, вприсутствииСМРкомпозициии применениеСМРкомпозиции. 6 н. и 10 з.п. ф-лы, 4 ил., 2 табл., 2 пр.
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公开(公告)号:SG11201600360YA
公开(公告)日:2016-02-26
申请号:SG11201600360Y
申请日:2014-07-08
Applicant: BASF SE
Inventor: LAUTER MICHAEL , LI YUZHUO , NOLLER BASTIAN MARTEN , LANGE ROLAND , REICHARDT ROBERT , LAN YONGQING , BOYKO VOLODYMYR , KRAUS ALEXANDER , SEYERL JOACHIM VON , USMAN IBRAHIM SHEIK ANSAR , SIEBERT MAX , HARTNAGEL KRISTINE , DENGLER JOACHIM , HILLESHEIM NINA SUSANNE
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.
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公开(公告)号:SG10201506220PA
公开(公告)日:2015-09-29
申请号:SG10201506220P
申请日:2011-09-06
Applicant: BASF SE
Inventor: LI YUZHUO , CHU JEA-JU , VENKATARAMAN SHYAM SUNDAR , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE
Abstract: An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices.
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公开(公告)号:MY171165A
公开(公告)日:2019-09-28
申请号:MYPI2014002274
申请日:2013-01-24
Applicant: BASF SE
Inventor: VENKATARAMAN SHYAM SUNDAR , LI YUZHUO , ZHONG MINGJIE
Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (?SH), thioether (?SR1 )or thiocarbonyl (>C=S) group, wherein R1 is alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (?OH) groups and does not comprise any carboxylic acid (?COOH) or carboxylate (?COO -) groups, and (C)an aqueous medium. (No suitable figure)
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19.
公开(公告)号:MY166785A
公开(公告)日:2018-07-23
申请号:MYPI2014001795
申请日:2011-12-21
Applicant: BASF SE
Inventor: RAMAN VIJAY IMMANUEL , LI YUZHUO , SCHADE CHRISTIAN , VENKATARAMAN SHYAM SUNDAR , YU-SHEN EASON SU , USMAN IBRAHIM SHEIK ANSAR
IPC: H01L21/302 , C09G1/00 , C09G1/02 , C09G1/04 , C09K3/14 , C09K13/00 , H01L21/306 , H01L21/3105 , H01L21/461
Abstract: A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (-P(=O)(OR1)(OR2) ) or phosphoric acid (-P(=O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkyl aryl, or aryl alkyl, R2 is h, alkyl, aryl, alkyl aryl, or aryl alkyl, and (C) an aqueous medium. (no suitable figure)
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公开(公告)号:RU2631870C2
公开(公告)日:2017-09-28
申请号:RU2014136176
申请日:2013-01-24
Applicant: BASF SE
Inventor: LI YUZHUO , VENKATARAMAN SHIAM SUNDAR , ZHONG MINGZHE
Abstract: Очищающаякомпозицияпослехимико-механическогополирования (после-СМР), содержащая: (А) соединение, представляющеесобойцистеин, N-ацетилцистеин, тиомочевинуилиихпроизводное, (В) эритрит, (С) воднуюсредуи (Е) поменьшеймереодноповерхностно-активноевещество, иееприменениедляудаленияостаткови загрязненийс поверхностиполупроводниковыхподложек, содержащихэлектропроводящиеслои (такиекакмедныеслои), электроизолирующиедиэлектроизолирующиедиэлектрическиеслои (такиекакслоидиэлектриковс низкойилисверхнизкойдиэлектрическойпроницаемостью) ибарьерныеслои (такиекакслоитантала, нитридатантала, нитридатитанаилирутения), т.е. изобретениеотноситсяк применениюочищающейкомпозициипослеСМРдляудаленияостаткови загрязнений, содержащихбензотриазолпослеСМР. 6 н. и 20 з.п. ф-лы, 5 табл., 3 ил.
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