公开(公告)号：AT287098T

公开(公告)日：2005-01-15

申请号：AT98952017

申请日：1998-09-28

Applicant: BREWER SCIENCE INC

Inventor： MEADOR JIM D ,  GUERRERO DOUGLAS J ,  SHAO XIE ,  KRISHNAMURTHY VANDANA

IPC: G03F7/11 ,  C08F8/00 ,  C08F220/32 ,  C08F283/10 ,  C09D133/06 ,  G03F7/09 ,  G03C1/492 ,  G03C1/815

Abstract: Anti-reflective coating compositions having improved etch rate, inter alia, are prepared from certain high molecular weight polymers and copolymers, particularly glycidyl methacrylate with grafted dyes.

公开(公告)号：WO2012092139A3

公开(公告)日：2012-10-18

申请号：PCT/US2011066910

申请日：2011-12-22

Applicant: BREWER SCIENCE INC ,  WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

Inventor： WASHBURN CARLTON ASHLEY ,  LAMB JAMES E III ,  BRAKENSIEK NICKOLAS L ,  LIN QIN ,  WANG YUBAO ,  KRISHNAMURTHY VANDANA ,  SCOTT CLAUDIA

IPC: H01L21/027

CPC classification number: H01L21/0337 ,  C09D5/00 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338 ,  Y10T428/24612

Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.

Abstract translation: 提供了形成微电子结构的方法。 该方法包括使用受控的底切过程形成T形结构，以及将可选择性蚀刻的组合物沉积到T形结构的底切区域中。 随后移除T形结构以产生非常小的底切形成的特征，其与T形结构的底切区域的宽度和可选地高度相符。 这些方法可以与其他常规图案化方法相结合，以创建具有非常小的特征尺寸的结构，而与用于图案化的光的波长无关。

公开(公告)号：WO2004001806A3

公开(公告)日：2004-09-16

申请号：PCT/US0319906

申请日：2003-06-24

Applicant: BREWER SCIENCE INC

Inventor： NEEF CHARLES J ,  KRISHNAMURTHY VANDANA

IPC: C08G79/00 ,  C08L85/00 ,  G02B1/11 ,  G03C1/492 ,  G03C5/00

CPC classification number: C08G79/00 ,  C08L85/00 ,  G02B1/111 ,  Y10S430/106 ,  C08L2666/02

Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers include a light-attenuating moiety having a structure selected from the group consisting of Formula (I) and (II), where each of X and Y is individually selected from the group consisting of electron withdrawing groups; R is selected from the group consisting of alkyls and aryls; and R is selected from the group consisting of hydrogen and alkyls. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

Abstract translation: 提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 在优选的实施方案中，聚合物包括具有选自式（I）和（II）的结构的光衰减部分，其中X 1和Y各自独立地选自吸电子 组; R 2选自烷基和芳基; 和R 3选自氢和烷基。 所得到的组合物是旋转碗相容的（即，它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联）是湿显影的并且具有优异的光学性能。

公开(公告)号：EP1546803A4

公开(公告)日：2009-03-11

申请号：EP03761298

申请日：2003-06-24

Applicant: BREWER SCIENCE INC

Inventor： NEEF CHARLES J ,  KRISHNAMURTHY VANDANA

IPC: G03C1/492 ,  C08G79/00 ,  C08L85/00 ,  G02B1/11 ,  G03C5/00 ,  H01L21/31 ,  H01L51/00

CPC classification number: C08G79/00 ,  C08L85/00 ,  G02B1/111 ,  Y10S430/106 ,  C08L2666/02

Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers include a light-attenuating moiety having a structure selected from the group consisting of Formula (I) and (II), where each of X1 and Y is individually selected from the group consisting of electron withdrawing groups; R2 is selected from the group consisting of alkyls and aryls; and R3 is selected from the group consisting of hydrogen and alkyls. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

Abstract translation: 提供了抗反射组合物和使用这些组合物形成电路的方法。 该组合物包含溶解或分散在溶剂体系中的聚合物。 在优选的实施方案中，聚合物包括具有选自式（I）和（II）的结构的光衰减部分，其中X 1和Y各自独立地选自吸电子基团; R2选自烷基和芳基; 并且R3选自氢和烷基。 所得组合物与旋转筒相容（即，它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联），湿润可显影并且具有优异的光学性质。

公开(公告)号：EP2766920A4

公开(公告)日：2015-05-27

申请号：EP12840652

申请日：2012-10-10

Applicant: BREWER SCIENCE INC

Inventor： KRISHNAMURTHY VANDANA ,  SULLIVAN DANIEL M ,  WANG YUBAO ,  LIN QIN ,  SIMMONS SEAN

IPC: H01L21/20 ,  H01L21/027 ,  H01L21/205

CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化的表面。 有利的是，使用碳氟化合物蚀刻在材料图案转移到硅衬底期间材料表现出摆动阻力。

公开(公告)号：EP2783389A4

公开(公告)日：2015-07-01

申请号：EP12851678

申请日：2012-11-20

Applicant: BREWER SCIENCE INC

Inventor： OUATTARA TANTIBORO ,  WASHBURN CARLTON ,  KRISHNAMURTHY VANDANA ,  GUERRERO DOUGLAS ,  COLLIN ALINE

IPC: H01L21/027 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/092 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/11 ,  G03F7/2004 ,  Y10S977/755 ,  Y10T428/24917

公开(公告)号：EP1023634A4

公开(公告)日：2002-02-13

申请号：EP98952017

申请日：1998-09-28

Applicant: BREWER SCIENCE INC

Inventor： MEADOR JIM D ,  GUERRERO DOUGLAS J ,  SHAO XIE ,  KRISHNAMURTHY VANDANA

IPC: G03F7/11 ,  C08F8/00 ,  C08F220/32 ,  C08F283/10 ,  C09D133/06 ,  G03F7/09 ,  G03C1/492 ,  G03C1/815

CPC classification number: G03F7/091 ,  C08F8/18 ,  C08F283/10 ,  C08F2800/10 ,  C08F2800/20 ,  C08F2810/20 ,  C09D133/062 ,  C08L2666/14 ,  C08L2666/28 ,  C08F120/32 ,  C08F8/14 ,  C08F20/32 ,  C08F8/00

Abstract: Anti-reflective coating compositions having improved etchrate, inter alia, are prepared from certain high molecular weight polymers and copolymers, particularly glycidyl methacrylate.

公开(公告)号：EP2839341A4

公开(公告)日：2015-11-25

申请号：EP13778282

申请日：2013-04-15

Applicant: BREWER SCIENCE INC

Inventor： WANG YUBAO ,  HOCKEY MARY ANN ,  GUERRERO DOUGLAS J ,  KRISHNAMURTHY VANDANA ,  COX ROBERT C

IPC: H01L21/033 ,  B81C1/00 ,  G03F7/00 ,  H01L21/311

CPC classification number: B81C1/0038 ,  B81B1/00 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/26 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.

公开(公告)号：EP1516226A4

公开(公告)日：2010-02-17

申请号：EP03739224

申请日：2003-06-18

Applicant: BREWER SCIENCE INC

Inventor： KRISHNAMURTHY VANDANA ,  NEEF CHARLES J ,  SNOOK JULIET A M

IPC: G03F7/11 ,  C08G79/00 ,  C08G79/10 ,  C08L85/00 ,  G03F7/09 ,  H01L21/027 ,  G03C1/735 ,  G03C1/825 ,  G03C1/835 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

CPC classification number: C08G79/10 ,  C08G79/00 ,  C08L85/00 ,  G03F7/091 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/151

公开(公告)号：EP1392508A4

公开(公告)日：2006-06-07

申请号：EP02762137

申请日：2002-04-15

Applicant: BREWER SCIENCE INC

Inventor： SHAO XIE ,  MEADOR JIM D ,  BHAVE MANDAR ,  KRISHNAMURTHY VANDANA ,  NOWAK KELLY A ,  FOWLER MICHELLE ,  DESHPANDE SHREERAM V

IPC: G03F7/11 ,  B32B7/02 ,  C08J3/24 ,  C09D5/00 ,  C09D7/12 ,  C09D105/00 ,  C09D133/00 ,  C09D161/20 ,  C09D163/00 ,  C09D167/00 ,  C09D171/00 ,  C09D179/08 ,  C09D201/00 ,  G03F7/004 ,  G03F7/09 ,  H01L21/027 ,  B32B27/36 ,  G03C1/492

CPC classification number: C08J3/241 ,  G03F7/091 ,  Y10S430/151

Abstract: Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, alpha-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).