公开(公告)号：US20170263820A1

公开(公告)日：2017-09-14

申请号：US15066095

申请日：2016-03-10

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Rong-Ren LEE ,  Yu-Ren PENG ,  Ming-Siang HUANG ,  Ming-Ta CHIN ,  Yi-Ching LEE

IPC: H01L33/46 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt.

公开(公告)号：US20170047478A1

公开(公告)日：2017-02-16

申请号：US15335078

申请日：2016-10-26

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Wen-Luh LIAO ,  Shou-Lung CHEN ,  Chien-Fu HUANG

IPC: H01L33/08 ,  H01L33/00 ,  H01L33/50 ,  H01L33/62 ,  H01L33/10 ,  H01L33/56

CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a wavelength filter between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the wavelength filter and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

Abstract translation: 一种发光器件包括：第一发光半导体堆叠，包括第一有源层; 在第一发光半导体堆叠下面的第二发光半导体堆叠，其中第二发光半导体堆叠包括第二有源层; 第一发光半导体堆叠和第二发光半导体堆叠之间的波长滤波器; 所述波长滤波器和所述第二发光半导体叠层之间的保护层; 并且其中所述第一发光半导体堆叠还包括夹着所述第一有源层的第一半导体层和第二半导体层，所述第二发光半导体堆叠还包括夹持所述第二有源层的第三半导体层和第四半导体层， 其中所述第二半导体层具有第一带隙，所述第三半导体层具有第二带隙，并且所述保护层在所述第一带隙和所述第二带隙之间具有第三带隙。

公开(公告)号：US20160204316A1

公开(公告)日：2016-07-14

申请号：US15079812

申请日：2016-03-24

Applicant: Epistar Corporation

Inventor： Chiu-Lin YAO ,  Chih-Chiang LU

IPC: H01L33/46 ,  H01L33/64 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L25/075 ,  H01L25/0753 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/6609 ,  H01L29/66969 ,  H01L29/861 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2924/00

Abstract: The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.

Abstract translation: 本公开是提供一种光电器件。 该光电器件包括散热基板; 所述绝热保护层包含AlInGaN系列材料， 以及包括在所述绝缘保护层上包括多层的外延结构的光电单元，其中所述外延结构的至少一层包括不含氮化物的III-V族材料。

公开(公告)号：US20150222094A1

公开(公告)日：2015-08-06

申请号：US14173650

申请日：2014-02-05

Applicant: Epistar Corporation

Inventor： Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Hung LIN ,  Wu-Tsung LO ,  Ta-Chuan KUO

IPC: H01S5/42 ,  H01S5/343 ,  H01S5/183 ,  H01S5/042

CPC classification number: H01S5/423 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/1835

Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.

Abstract translation: 发光阵列包括多个发光元件，其中所述多个发光元件中的每一个包括第一半导体叠层; 以及连接到所述多个发光元件的多个桥结构，其中所述多个发光元件被所述多个桥结构间隔开，其中所述多个桥结构中的每一个包括第二半导体堆叠，所述第二半导体堆叠具有 与第一半导体堆叠相同的外延堆叠。

公开(公告)号：US20140021505A1

公开(公告)日：2014-01-23

申请号：US14038969

申请日：2013-09-27

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Shiuan-Leh LIN ,  Chih-Chiang LU ,  Chia-Liang HSU

IPC: H01L33/46

CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46 ,  H01L33/58 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 形成在所述基板上的中间层; 透明结合层; 通过透明结合层与半导体层接合的第一半导体窗口层; 以及形成在第一半导体窗口层上的发光叠层。 中间层具有基板的折射率与第一半导体窗口层的折射率之间的折射率。

公开(公告)号：US20200006595A1

公开(公告)日：2020-01-02

申请号：US16568546

申请日：2019-09-12

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh LIAO ,  Chih-Chiang LU ,  Shih-Chang LEE ,  Hung-Ta CHENG ,  Hsin-Chan CHUNG ,  Yi-Chieh LIN

IPC: H01L33/20

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

公开(公告)号：US20180269358A1

公开(公告)日：2018-09-20

申请号：US15983964

申请日：2018-05-18

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Rong-Ren LEE ,  Yu-Ren PENG ,  Ming-Siang HUANG ,  Ming-Ta CHIN ,  Yi-Ching LEE

IPC: H01L33/46 ,  H01L33/10 ,  H01L33/04 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

公开(公告)号：US20170256914A1

公开(公告)日：2017-09-07

申请号：US15062995

申请日：2016-03-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Yi-Hung LIN ,  Chih-Chiang LU

IPC: H01S5/187 ,  H01S5/343 ,  H01S5/22 ,  H01S5/183 ,  H01S5/042

CPC classification number: H01S5/187 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/343 ,  H01S5/423 ,  H01S2301/18

Abstract: A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

公开(公告)号：US20170170375A1

公开(公告)日：2017-06-15

申请号：US15438430

申请日：2017-02-21

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Yao-Ning CHAN ,  Tzu Chieh HSU ,  Yi Ming CHEN ,  Hsin-Chih CHIU ,  Chih-Chiang LU ,  Chia-Liang HSU ,  Chun-Hsien CHANG

IPC: H01L33/62 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US20170033259A1

公开(公告)日：2017-02-02

申请号：US15295226

申请日：2016-10-17

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract translation: 半导体器件包括衬底，衬底上的第一半导体单元以及衬底和第一半导体单元之间的第一粘附结构，并且直接接触第一半导体单元和衬底，其中第一粘附结构包括粘附层和 牺牲层，并且粘合层和牺牲层由不同的材料制成，并且其中第一半导体单元和粘附层之间的粘附力与第一半导体单元和牺牲层之间的粘合不同。