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    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    11.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20190296186A1

    公开(公告)日：2019-09-26

    申请号：US16436544

    申请日：2019-06-10

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

    IPC: H01L33/02 ,  H01L23/00 ,  H01L25/075 ,  H01L33/62 ,  H01L21/66

    Abstract: The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    13.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20170271548A1

    公开(公告)日：2017-09-21

    申请号：US15609795

    申请日：2017-05-31

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

    IPC: H01L33/02 ,  H01L25/075 ,  H01L33/62 ,  H01L21/66

    Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface of the permanent substrate; wherein the third block of semiconductor stack is separated from the first substrate, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of the semiconductor stack comprise different optical characteristic value or an electrical characteristic value.

    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE
    14.
    发明申请
    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE 有权
    选择性传输半导体器件的方法

    公开(公告)号：US20160163917A1

    公开(公告)日：2016-06-09

    申请号：US14908886

    申请日：2013-07-29

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

    IPC: H01L33/00 ,  H01L33/62 ,  H01L21/683

    CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

    Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

    Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

    LIGHT-EMITTING DEVICE
    15.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20230014825A1

    公开(公告)日：2023-01-19

    申请号：US17947526

    申请日：2022-09-19

    Applicant: EPISTAR CORPORATION

    Inventor： Chung-Hao WANG ,  Yu-Chi WANG ,  Yi-Ming CHEN ,  Yi-Yang CHIU ,  Chun-Yu LIN

    IPC: H01L33/20 ,  H01L33/46 ,  H01L33/38 ,  H01L33/22

    Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

    LIGHT-EMITTING DEVICE
    16.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20200287075A1

    公开(公告)日：2020-09-10

    申请号：US16883742

    申请日：2020-05-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

    IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62 ,  H01L25/075 ,  H01L23/00

    Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

    LIGHT EMITTING DEVICE
    17.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20200105975A1

    公开(公告)日：2020-04-02

    申请号：US16700614

    申请日：2019-12-02

    Applicant: EPISTAR CORPORATION

    Inventor： Yao-Ru CHANG ,  Wen-Luh LIAO ,  Chun-Yu LIN ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG

    IPC: H01L33/44 ,  H01L33/38 ,  H01L33/24 ,  H01L33/30 ,  H01L33/62

    Abstract: The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

    LIGHT-EMITTING DEVICE
    20.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20240421253A1

    公开(公告)日：2024-12-19

    申请号：US18815298

    申请日：2024-08-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chung-Hao WANG ,  Yu-Chi WANG ,  Yi-Ming CHEN ,  Yi-Yang CHIU ,  Chun-Yu LIN

    IPC: H01L33/20 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/46

    Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.

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