18.
    发明专利
    未知

    公开(公告)号:DE2602825A1

    公开(公告)日:1976-08-05

    申请号:DE2602825

    申请日:1976-01-27

    Applicant: IBM

    Abstract: 1515330 Electron sensitive polymers INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1975 [29 Jan 1975] 49960/75 Heading G2C Positive resist masks are formed by exposing a supported film of a non-crosslinked polymeric material to electron beam radiation in a predetermined pattern so as to degrade the polymeric material in the exposed areas, and removing the degraded products in the exposed areas. The polymeric material used is selected from (1) polyalkyl methacrylates and copolymers of alkyl methacrylates with halogen - or cyano - containing monomers and (2) post halogenated derivatives of the polymers in (1). The coated polymers may be baked prior to exposure and also after development.

    20.
    发明专利
    未知

    公开(公告)号:DE2536300A1

    公开(公告)日:1976-04-08

    申请号:DE2536300

    申请日:1975-08-14

    Applicant: IBM

    Abstract: 1500403 Sensitized olefin-sulphone polymers INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [26 Sept 1974] 21838/75 Addition to 1421805 Heading G2C A radiation sensitive positive resist comprises an olefin-sulphone polymer sensitized by a charge transfer agent or a free radical source. The polymer is preferably poly (hexene-1-sulphone) and sensitizers include azulene, 2, 4, 7-trinitrofluorenone, fluorene, diphenylamine, p-nitroaniline, CCl4, CBr4, Cl4, phenyl disulphide, azobenzene, and poly(alpha-chloromethylacrylate). The resist is degraded on exposure to U.V., visible light, x-rays, gamma radiation and low energy electron beams of from 10 to 30 KeV. The exposed areas of the polymer are removed using a solvent such as 1,4- dichlorobutane.

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