公开(公告)号：DE69514171T2

公开(公告)日：2000-06-21

申请号：DE69514171

申请日：1995-07-13

Applicant: IBM

Inventor： FAHEY JAMES THOMAS ,  HERBST BRIAN WAYNE ,  LINEHAN LEO LAWRENCE ,  MOREAU WAYNE MARTIN ,  SPINILLO GARY THOMAS ,  WELSH KEVIN MICHAEL ,  WOOD ROBERT LAVIN

IPC: G03F7/004 ,  C08G65/40 ,  C08G67/00 ,  C09D171/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

Abstract: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

公开(公告)号：DE69227210D1

公开(公告)日：1998-11-12

申请号：DE69227210

申请日：1992-02-11

Applicant: IBM

Inventor： CORNETT KATHLEEN MARIE ,  HEFFERON GEORGE JOSEPH ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN

IPC: G03F7/004 ,  G03F7/022 ,  G03F7/16 ,  H01L21/027

公开(公告)号：DE69320567D1

公开(公告)日：1998-10-01

申请号：DE69320567

申请日：1993-06-15

Applicant: IBM

Inventor： KNORS CHRISTOPHER JOHN ,  MOREAU WAYNE MARTIN ,  MACY ELWOOD HERBERT

IPC: C08F8/32 ,  C09B69/10 ,  C09D5/00 ,  C09D133/02 ,  C09D133/26 ,  G02B1/11 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

公开(公告)号：DE69027799T2

公开(公告)日：1997-01-23

申请号：DE69027799

申请日：1990-02-02

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  KNORS CHRISTOPHER JOHN ,  KWONG RANEE WAI-LING ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SACHDEV HARBANS SINGH

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.

公开(公告)号：FR2286414A1

公开(公告)日：1976-04-23

申请号：FR7525147

申请日：1975-08-07

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED OMAR U III

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03C1/72 ,  G03F7/00

Abstract: Production of an image on a high-resolution radiation sensitive positive resist material, by comprises (1) applying a film of a poly-(alpha-lower-alkenyl ketone) on a substrate (2) irradiating in a pre-determined pattern, and (3) treating the film with a solvent for the breakdown product formed in the irradiated areas. Used in mfr. of integrated printed circuits, printing plates etc. Post hardening of the photo-resist image is not required. The image has a high resolution, below the film thickness e.g. 0.5 um lines with the same separation can be obtained in 1 um films.

公开(公告)号：DE68926019T2

公开(公告)日：1996-10-02

申请号：DE68926019

申请日：1989-10-10

Applicant: IBM

Inventor： MERRITT DAVID PAUL ,  WOOD ROBERT LAVIN ,  MOREAU WAYNE MARTIN

IPC: C09D11/10 ,  C08F8/14 ,  G03F7/039 ,  H01L21/027

公开(公告)号：DE68926019D1

公开(公告)日：1996-04-25

申请号：DE68926019

申请日：1989-10-10

Applicant: IBM

Inventor： MERRITT DAVID PAUL ,  WOOD ROBERT LAVIN ,  MOREAU WAYNE MARTIN

IPC: C09D11/10 ,  C08F8/14 ,  G03F7/039 ,  H01L21/027

公开(公告)号：DE2602825A1

公开(公告)日：1976-08-05

申请号：DE2602825

申请日：1976-01-27

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  NEED III OMAR U ,  MOREAU WAYNE MARTIN

IPC: H01L21/027 ,  B41C1/00 ,  C08J3/28 ,  G03F7/039 ,  G03F7/10

Abstract: 1515330 Electron sensitive polymers INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1975 [29 Jan 1975] 49960/75 Heading G2C Positive resist masks are formed by exposing a supported film of a non-crosslinked polymeric material to electron beam radiation in a predetermined pattern so as to degrade the polymeric material in the exposed areas, and removing the degraded products in the exposed areas. The polymeric material used is selected from (1) polyalkyl methacrylates and copolymers of alkyl methacrylates with halogen - or cyano - containing monomers and (2) post halogenated derivatives of the polymers in (1). The coated polymers may be baked prior to exposure and also after development.

公开(公告)号：DE2552582A1

公开(公告)日：1976-07-01

申请号：DE2552582

申请日：1975-11-24

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.

公开(公告)号：DE2536300A1

公开(公告)日：1976-04-08

申请号：DE2536300

申请日：1975-08-14

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: G03F7/039 ,  G03F7/10 ,  G03F1/00

Abstract: 1500403 Sensitized olefin-sulphone polymers INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [26 Sept 1974] 21838/75 Addition to 1421805 Heading G2C A radiation sensitive positive resist comprises an olefin-sulphone polymer sensitized by a charge transfer agent or a free radical source. The polymer is preferably poly (hexene-1-sulphone) and sensitizers include azulene, 2, 4, 7-trinitrofluorenone, fluorene, diphenylamine, p-nitroaniline, CCl4, CBr4, Cl4, phenyl disulphide, azobenzene, and poly(alpha-chloromethylacrylate). The resist is degraded on exposure to U.V., visible light, x-rays, gamma radiation and low energy electron beams of from 10 to 30 KeV. The exposed areas of the polymer are removed using a solvent such as 1,4- dichlorobutane.