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    11.
    发明专利
    未知

    公开(公告)号：FR2357067A1

    公开(公告)日：1978-01-27

    申请号：FR7716061

    申请日：1977-05-18

    Applicant: IBM

    Inventor： DEINES JOHN L ,  KU SAN-MEI ,  POPONIAK MICHAEL R ,  TSANG PAUL J

    IPC: C30B25/02 ,  C30B29/36 ,  H01L21/04 ,  H01L21/205 ,  H01L21/762 ,  H01L29/267 ,  H01L21/314

    Abstract: A method for forming monocrystalline silicon carbide on a silicon substrate by converting a portion of the monocrystalline silicon substrate into a porous silicon substance by anodic treatment carried out in an aqueous solution of hydrofluoric acid, heating the resultant substrate to a temperature in the range of 1050 DEG C to 1250 DEG C in an atmosphere that includes a hydrocarbon gas for a time sufficient to react the porous silicon and the gas, thereby forming a layer of monocrystalline silicon carbide on the silicon substrate.

    12.
    发明专利
    未知

    公开(公告)号：FR2308202A1

    公开(公告)日：1976-11-12

    申请号：FR7605144

    申请日：1976-02-17

    Applicant: IBM

    Inventor： ABBAS SHAKIR A ,  DOCKERTY ROBERT C ,  POPONIAK MICHAEL R

    IPC: H01L21/306 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/322 ,  H01L29/06 ,  B41J3/04

    Abstract: 1515031 Electrolytic etching of silicon INTERNATIONAL BUSINESS MACHINES CORP 3 Feb 1976 [14 April 1975] 4111/76 Heading C7B [Also in Division H1] A hole is made in a monocrystalline silicon body by providing masking with aligned apertures on parallel opposed faces of the body, providing a conductor in contact with the body through one of the openings and using this as anode in an anodic treatment to convert the entire region between the apertures to porous silicon which is then etched out to leave a hole. Typically a plurality of holes are simultaneously formed in a 100 oriented wafer which may have integrated circuitry formed on one or both faces. The masking may consist of silicon dioxide or nitride with an optical overlayer of chromium, or of silicon oxynitride or nitride-onoxide. After photoetching to form the apertures heavily doped surface regions may be formed below the apertures on one or both faces by impurity diffusion or implantation of helium ions or protons and a chromium anode layer deposited on one face. After anodic treatment in a 1:2 mixture of 49% hydrofluoric acid and distilled water the anode is removed and the porous silicon etched out.

    13.
    发明专利
    未知

    公开(公告)号：FR2305853A1

    公开(公告)日：1976-10-22

    申请号：FR7603001

    申请日：1976-01-29

    Applicant: IBM

    Inventor： KU SAN-MEI ,  PILLUS CHARLES A ,  POPONIAK MICHAEL R ,  SCHWENKER ROBERT O

    IPC: C30B31/22 ,  H01L21/22 ,  H01L21/265 ,  H01L21/761

    Abstract: In integrated circuit fabrication, a method is provided for simultaneously forming two regions of the same conductivity-type such as the base and isolation regions. In one embodiment, an epitaxial layer of one conductivity-type is formed on a substrate of opposite conductivity-type, after which dopant ions of the opposite conductivity-type are introduced into the epitaxial surface areas which are to provide the base and isolation regions, and in addition, the isolation regions are bombarded with non-dopant ions having a maximum atomic number of two, e.g., hydrogen or helium ion while the base regions are appropriately masked and remain umbombarded, said bombardment is carried out at temperatures below 300 DEG C, preferably room temperature. The bombardment is preferably carried out so that the non-dopant ions are implanted primarily in regions below the isolation regions. Next, the wafer is heated at a temperature at a range of from 600 DEG - 900 DEG C which is substantially below normal drive-in diffusion temperatures for unbombarded doped regions. The heating to be maintained for a period sufficient to drive-in diffuse the bombarded isolation regions through the epitaxial layer into contact with the substrate but is insufficient to drive-in the unbombarded base regions to such a depth.

    COMBUSTION MONITORING AND CONTROL SYSTEM
    15.
    发明专利
    COMBUSTION MONITORING AND CONTROL SYSTEM 未知

    公开(公告)号：CA1090442A

    公开(公告)日：1980-11-25

    申请号：CA282607

    申请日：1977-07-13

    Applicant: IBM

    Inventor： GULITZ LOUIS ,  KWAP THEODORE W ,  LISLE WALTER I ,  O'KANE DANIEL F ,  POPONIAK MICHAEL R

    IPC: F23N1/02 ,  F23N5/08 ,  G05D7/06 ,  G05D11/13

    Abstract: COMBUSTION MONITORING AND CONTROL SYSTEM A real time monitoring and control system for single or multi-fired combustion systems which permits adjustment of the air fuel ratio in the system for optimized efficiency and minimized pollution content in the exhaust gas, while providing safety control of the combustion process. The system includes a high sensitivity light sensor which is utilized to monitor the combustion flame and provide an electrical output proportional to flame temperature, that is utilized to control the air fuel ratio of the system. The wavelength sensitivity of the sensor is capable of selection, for example by selection of sensor type and/or use of appropriate filters, to monitor a predetermined range of region of the flame emission spectrum in order to enable correlation of the intensity of the emission spectrum of the type of fuel being utilized, i.e., oil or natural gas, with temperature and combustion efficiency. A sensor having a defined field of view is utilized and means are provided to sample signals from selected portions of the field of view of the sensor to enable temperature monitoring of a multi-flame system. The output of the sensor is provided to a computer which in turn is electrically connected to control a valve that individually adjusts the air fuel ratio of each flame of the system to permit real time adjustment of the combustion process. The system enables control of combustion at or near optimum burning efficiency, i.e., in the range of 1/2 to 1 percent excess oxygen.

    16.
    发明专利
    未知

    公开(公告)号：FR2357065A1

    公开(公告)日：1978-01-27

    申请号：FR7717613

    申请日：1977-06-02

    Applicant: IBM

    Inventor： BEYER KLAUS D ,  DAS GOBINDA ,  POPONIAK MICHAEL R ,  YEH TSU-HSING

    IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331

    Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

    19.
    发明专利
    未知

    公开(公告)号：FR2316732A1

    公开(公告)日：1977-01-28

    申请号：FR7616133

    申请日：1976-05-21

    Applicant: IBM

    Inventor： POPONIAK MICHAEL R ,  SCHWENKER ROBERT O

    IPC: H01L21/316 ,  H01L21/762 ,  H01L21/76

    Abstract: In the fabrication of integrated circuits, a method is provided for forming dielectrically isolated regions in a semiconductor substrate comprising forming over the semiconductor substrate surface an electrically insulating layer of dielectric material having a plurality of openings therethrough and etching to form recesses in the semiconductor substrate exposed in the openings. Then, aluminum is deposited over the substrate so that an aluminum layer is formed on said layer of dielectric material as well as in said recesses. Next, the aluminum in the recesses is selectively anodized to form aluminum oxide, and the remaining aluminum on said layer of dielectric material is removed either by selectively etching away the aluminum layer or by a "lift-off" technique wherein the insulating layer of dielectric material under the aluminum is etched away thereby "lifting-off" and removing the aluminum.

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