公开(公告)号：DE3878060T2

公开(公告)日：1993-08-12

申请号：DE3878060

申请日：1988-07-01

Applicant: IBM

Inventor： BARBEE STEVEN GEORGE ,  HUANG HUNG-CHANG ,  HUNT DONALD JOHN ,  KIM JUNGIHL ,  PARK JAE MYUNG ,  PERRY CHARLES HAMPTON ,  SHIH DA-YUAN

IPC: B32B18/00 ,  C03C17/22 ,  C03C17/23 ,  C03C17/245 ,  C04B41/50 ,  C04B41/87 ,  H01L23/15 ,  H05K1/03 ,  H01L23/14 ,  H01L21/48 ,  C23C16/30 ,  C23C14/34

Abstract: The article comprises a sintered ceramic, and an adherent coating of a dielectric material on at least a part of the surface of said ceramic, said coating forming a compressive layer on said part of said ceramic surface. The method for forming e.g. such articles comprises, depositing onto at least a portion of said ceramic article an adherent layer of dielectric material, said layer forming a compressive layer on cooling.

公开(公告)号：DE3878060D1

公开(公告)日：1993-03-18

申请号：DE3878060

申请日：1988-07-01

Applicant: IBM

Inventor： BARBEE STEVEN GEORGE ,  HUANG HUNG-CHANG ,  HUNT DONALD JOHN ,  KIM JUNGIHL ,  PARK JAE MYUNG ,  PERRY CHARLES HAMPTON ,  SHIH DA-YUAN

IPC: B32B18/00 ,  C03C17/22 ,  C03C17/23 ,  C03C17/245 ,  C04B41/50 ,  C04B41/87 ,  H01L23/15 ,  H05K1/03 ,  H01L23/14 ,  H01L21/48 ,  C23C16/30 ,  C23C14/34

Abstract: The article comprises a sintered ceramic, and an adherent coating of a dielectric material on at least a part of the surface of said ceramic, said coating forming a compressive layer on said part of said ceramic surface. The method for forming e.g. such articles comprises, depositing onto at least a portion of said ceramic article an adherent layer of dielectric material, said layer forming a compressive layer on cooling.

公开(公告)号：DE69737599T2

公开(公告)日：2007-12-20

申请号：DE69737599

申请日：1997-09-12

Applicant: IBM

Inventor： BEAMAN BRIAN SAMUEL ,  FOGEL KEITH EDWARD ,  LAURO PAUL ALFRED ,  SHIH DA-YUAN

IPC: G01R1/073 ,  G01R1/067 ,  H01L21/66

Abstract: The present invention is directed to a structure comprising a substrate having a surface; a plurality of elongated electrical conductors extending away from the surface; each of said elongated electrical conductors having a first end affixed to the surface and a second end projecting away from the surface; there being a plurality of second ends; and a means for maintaining the plurality of the second ends in substantially fixed positions with respect to each other. The structure is useful as a probe for testing and burning in integrated circuit chips at the wafer level.

公开(公告)号：DE69737599D1

公开(公告)日：2007-05-24

申请号：DE69737599

申请日：1997-09-12

Applicant: IBM

Inventor： BEAMAN BRIAN SAMUEL ,  FOGEL KEITH EDWARD ,  LAURO PAUL ALFRED ,  SHIH DA-YUAN

IPC: G01R1/073 ,  G01R1/067 ,  H01L21/66

Abstract: The present invention is directed to a structure comprising a substrate having a surface; a plurality of elongated electrical conductors extending away from the surface; each of said elongated electrical conductors having a first end affixed to the surface and a second end projecting away from the surface; there being a plurality of second ends; and a means for maintaining the plurality of the second ends in substantially fixed positions with respect to each other. The structure is useful as a probe for testing and burning in integrated circuit chips at the wafer level.

公开(公告)号：BR0307719A

公开(公告)日：2005-04-26

申请号：BR0307719

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  SHIH DA-YUAN ,  PUTTLITZ KARL SR

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34 ,  H01L23/488

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling deltaT relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.

公开(公告)号：CA1286791C

公开(公告)日：1991-07-23

申请号：CA589395

申请日：1989-01-27

Applicant: IBM

Inventor： BOSS DAVID W ,  CARR TIMOTHY W ,  DUBETSKY DERRY J ,  GREENSTEIN GEORGE M ,  GROBMAN WARREN D ,  HAYUNGA CARL P ,  KUMAR ANANDA H ,  LANGE WALTER F ,  MASSEY ROBERT H ,  PALMATEER PAUL H ,  ROMANO JOHN A ,  SHIH DA-YUAN

IPC: H05K9/00 ,  H01L23/498 ,  H05K3/46 ,  H01L23/485

Abstract: Sealing and stress relief are provided to a low-fracture strength glass-ceramic substrate. Hermeticity is addressed through the use of capture pads in alignment with vias and through polymeric overlayers with interconnection between the underlying via or pad metallurgy and the device, chip, wire or pin bonded to the surface of the layer. Multilevel structures are taught along with a self-aligned sealing and wiring process.

公开(公告)号：CA2475491C

公开(公告)日：2012-03-27

申请号：CA2475491

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

IPC: B23K1/00 ,  C22C13/00 ,  B23K35/26 ,  B23K101/42 ,  H01L21/60 ,  H01L23/12 ,  H01L23/488 ,  H05K3/34

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90 %. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates (57, 58) is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling .delta.T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0 % or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate (57, 58) formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5 %.

公开(公告)号：AU2003209129A8

公开(公告)日：2003-09-09

申请号：AU2003209129

申请日：2003-02-11

Applicant: IBM

Inventor： KANG SUNG K ,  GOSSELIN TIMOTHY A ,  CHOI WON K ,  PUTTLITZ KARL SR ,  HENDERSON DONALD W ,  GOLDSMITH CHARLES C ,  SHIH DA-YUAN

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34 ,  H01L23/488

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling deltaT relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.

公开(公告)号：AU2003209129A1

公开(公告)日：2003-09-09

申请号：AU2003209129

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling deltaT relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.

公开(公告)号：DE69417640T2

公开(公告)日：1999-12-02

申请号：DE69417640

申请日：1994-06-28

Applicant: IBM

Inventor： AYALA-ESQUILIN JUAN ,  BEAMAN BRIAN SAMUEL ,  HARING RUDOLF ADRIAAN ,  HEDRICK JAMES LUPTON ,  SHIH DA-YUAN ,  WALKER GEORGE FREDERICK

IPC: H01R11/01 ,  H01B3/46 ,  H01B5/16 ,  H01L23/14 ,  H01L23/538 ,  H01R43/00

Abstract: The present invention relates to an improved pinless connector for use in microelectronics having an elastomer resin comprising polysiloxane and filler. In particular the elastomer resin has a tensile strength greater than 170 psi and comprises (i) a crosslinked polysiloxane comprising about 70 to 90 weight % of a crosslinked random copolymer of dimethylsiloxane and diphenylsiloxane and (ii) about 10 to 30 weight % of filler comprising zinc oxide and a lanthanide oxide.