公开(公告)号：GB2488250B

公开(公告)日：2014-02-26

申请号：GB201203583

申请日：2010-11-26

Applicant: IBM

Inventor： CHENG JOY ,  HINSBERG WILLIAM ,  WALLRAFF GREGORY MICHAEL ,  TRUONG HOA ,  SUNDBERG LINDA KARIN ,  ITO HIROSHI ,  SANDERS DANIEL PAUL ,  KIM HO-CHEOL ,  NA YOUNG-HYE

IPC: G03F7/16 ,  B81C1/00 ,  G03F7/20 ,  G03F7/32

Abstract: A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

公开(公告)号：DE112015003339B4

公开(公告)日：2022-08-04

申请号：DE112015003339

申请日：2015-07-24

Applicant: IBM ,  SHINETSU CHEMICAL CO

Inventor： SOORIYAKUMARAN RATNAM ,  SUNDBERG LINDA KARIN ,  SANCHEZ MARTHA INEZ ,  BOZANO LUISA DOMINICA ,  SANDERS DANIEL PAUL ,  WATANABE SATOSHI ,  MASUNAGA KEIICHI ,  DOMON DAISUKE ,  KAWAI YOSHIO

IPC: G03F7/004 ,  C08F212/14 ,  G03F7/038

Abstract: Mit wässriger Base entwickelbare Negativresistzusammensetzung, frei von Vernetzungsmitteln und aufweisend:ein multifunktionelles Polymer, bestehend aus ersten Wiederholungseinheiten, welche Löslichkeit in wässrigem basischem Entwickler verleihen, zweiten Wiederholungseinheiten, welche eine Polaritätswechseleinheit enthalten, und dritten Wiederholungseinheiten, welche eine kovalent gebundene Photosäuregenerator-Gruppe enthalten,wobei die ersten Wiederholungseinheiten etwa 50 Mol-% bis etwa 80 Mol-% des multifunktionellen Polymers ausmachen, die zweiten Wiederholungseinheiten etwa 10 Mol-% bis etwa 40 Mol-% des multifunktionellen Polymers ausmachen und die dritten Wiederholungseinheiten etwa 1 Mol-% bis etwa 10 Mol-% des multifunktionellen Polymers ausmachen, undferner aufweisend freien Photosäuregenerator, wobei der freie Photosäuregenerator etwa 1 Gew.-% bis etwa 12,5 Gew.-% der Zusammensetzung ausmacht.

公开(公告)号：GB2512794B

公开(公告)日：2015-05-06

申请号：GB201413639

申请日：2013-02-12

Applicant: IBM

Inventor： BASS JOHN DAVID ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL ,  MILLER ROBERT DENNIS ,  KIM HO-CHEOL ,  SONG QING

IPC: G03F7/004 ,  C07F7/28 ,  C07F9/00 ,  G03F7/20

公开(公告)号：DE602006011049D1

公开(公告)日：2010-01-21

申请号：DE602006011049

申请日：2006-10-13

Applicant: IBM

Inventor： BROCK PHILIP JOE ,  CHA JENNIFER ,  GIL DARIO ,  LARSON CARL ERIC ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY

IPC: C09D129/00 ,  C09D131/04 ,  G03F7/00

Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.

公开(公告)号：GB2512794A

公开(公告)日：2014-10-08

申请号：GB201413639

申请日：2013-02-12

Applicant: IBM

Inventor： BASS JOHN DAVID ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL ,  MILLER ROBERT DENNIS ,  KIM HO-CHEOL ,  SONG QING

IPC: G03F7/004 ,  C07F7/28 ,  C07F9/00 ,  G03F7/20

Abstract: Compositions are disclosed having the formula (3): [C']k[Ta(O2)x(L')y] (3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L')y has a charge of 0 to -3, C' is a counterion having a charge of + 1 to +3, k is an integer of 0 to 3, L' is an oxidatively stable organic ligand having a charge of 0 to -4, and L' comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphme oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.

公开(公告)号：SG11201402450UA

公开(公告)日：2014-06-27

申请号：SG11201402450U

申请日：2013-02-12

Applicant: IBM

Inventor： BASS JOHN DAVID ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL ,  MILLER ROBERT DENNIS ,  KIM HO-CHEOL ,  SONG QING

IPC: G03F7/00 ,  G03F7/004