公开(公告)号：DE10050076C2

公开(公告)日：2003-09-18

申请号：DE10050076

申请日：2000-10-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWARZL SIEGFRIED ,  KERSCH ALFRED ,  MIETHANER STEFAN ,  WENDT HERMANN

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/15 ,  G11C11/16

公开(公告)号：DE10143718A1

公开(公告)日：2003-03-27

申请号：DE10143718

申请日：2001-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SABISCH WINFRIED ,  KERSCH ALFRED

IPC: H01L21/00 ,  H01L21/687 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/68

Abstract: The wafer (1) is held in position by an electrostatic chuck (4) against an electrode (3). A focus ring (2) surrounds the wafer. To compensate for inaccurate positioning by the wafer handling system free space is left below the section of the wafer which projects outside the chuck. This space is filled with an electrically conducting sealant (10), e.g. a silicon insert.

公开(公告)号：DE10137570A1

公开(公告)日：2003-02-27

申请号：DE10137570

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERSCH ALFRED ,  SABISCH WINFRIED

IPC: H01L21/3065 ,  H01L21/8242

Abstract: A method and an apparatus for implementing the method produces at least one depression as a microstructure, in particular, a deep trench, in a semiconductor material, in particular, during the production of DRAMs and heats an area of at least one depression in the semiconductor material during an etching step, at least from time to time and/or locally. Such a configuration makes it possible to produce depressions in semiconductor materials efficiently, in particular, those with a high aspect ratio.

公开(公告)号：NL1025104C2

公开(公告)日：2005-10-25

申请号：NL1025104

申请日：2003-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUHL GUENTHER ,  PRECHTL GERHARD ,  SABISCH WINFRIED ,  KERSCH ALFRED ,  NESLADEK PAVEL ,  GANS FRITZ ,  ANDERSON REX

IPC: G03F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/687

公开(公告)号：DE10260645B3

公开(公告)日：2004-09-16

申请号：DE10260645

申请日：2002-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUHL GUENTHER ,  PRECHTL GERHARD DR ,  SABISCH WINFRIED ,  KERSCH ALFRED ,  NESLADEK PAVEL ,  GANS FRITZ ,  ANDERSON REX

IPC: G03F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/687 ,  H01L21/68 ,  H01L21/306

Abstract: The frame (2) has an inner contour for holding a substrate (1), a region (3a) of an upper main surface at a defined height above the substrate in the frame and a further region (3b) at essentially the same height as the plane of the upper main surface (1a) of the substrate in the frame. The inner profile is polygonal for accommodating the substrate and the further area of the upper main surface of the frame has different widths at different points.

公开(公告)号：DE10245636A1

公开(公告)日：2003-09-25

申请号：DE10245636

申请日：2002-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERSCH ALFRED ,  BAUMGARTL JOHANNES ,  DELAGE STEPHANIE

IPC: B24B37/04 ,  H01L21/302

Abstract: A chemical mechanical polishing process rotates a wafer having an alignment mark at a wafer rotation rate and a polishing surface at an off-matched rotation rate. The wafer rotation rate and the off-matched rotation rate are not equal. The wafer rotating at the wafer rotation rate and the polishing surface rotating at the off-matched rotation rate touch to polish a plurality of points on the wafer. The rotation of the wafer rotating at the wafer rotation rate is adjusted with respect to the polishing surface rotating at the off-matched rotation rate to achieve an approximately zero averaged rotation rate velocity for each of the points on the wafer with respect to the polishing surface polishing the wafer upon a completion of the total polishing time.

公开(公告)号：DE10102745C2

公开(公告)日：2003-06-12

申请号：DE10102745

申请日：2001-01-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE-ICKING GEORG ,  STEINHOEGL WERNER ,  KERSCH ALFRED

IPC: C23C16/44 ,  C23F4/00 ,  C23C16/00

公开(公告)号：DE10143650A1

公开(公告)日：2003-03-13

申请号：DE10143650

申请日：2001-09-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOEBEL BERND ,  STEINHOEGL WERNER ,  KERSCH ALFRED ,  GUTSCHE MARTIN ,  SEIDL HARALD ,  LUETZEN JOERN ,  POPP MARTIN ,  SCHUMANN DIRK

IPC: H01L21/8242 ,  H01L27/108

Abstract: A semiconductor memory cell has trenches (25,50) in a substrate (15) having a capacitor (30) and long trenches having spacer wordlines with an active region between them having a vertical select transistor. Conductive bridges between wordlines in a trench are less than half as thick as the trench width. An Independent claim is also included for a process for making the above memory.

公开(公告)号：DE10137569A1

公开(公告)日：2003-02-27

申请号：DE10137569

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERSCH ALFRED ,  JACOBS WERNER ,  SCHULZE ICKING GEORG

IPC: H01L21/3065 ,  H01L21/8242

Abstract: Production of a trench (10) in a semiconductor material comprises forming a reactive substance outside the reaction chamber (1) in a reaction space (3) from a precursor. An Independent claim is also included for a device for carrying out the process. Preferred Features: The reactive substance is produced by a plasma source. A precursor of the reactive substance is fed to the reaction chamber. The reactive substance is a reactive radical, especially an atomic halogen or halogen-containing radical. The trench is formed by reactive ion etching.

公开(公告)号：NL1025104A1

公开(公告)日：2004-06-24

申请号：NL1025104

申请日：2003-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUHL GUENTHER ,  PRECHTL GERHARD ,  SABISCH WINFRIED ,  KERSCH ALFRED ,  NESLADEK PAVEL ,  GANS FRITZ ,  ANDERSON REX

IPC: G03F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/687