公开(公告)号：DE10051134A1

公开(公告)日：2002-05-02

申请号：DE10051134

申请日：2000-10-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD

IPC: G03F1/00 ,  G03F9/00

Abstract: A method for eliminating phase conflicts that occur in the layout of a phase mask in a localized and automated manner. The method includes a first step in which a set of phase conflicts is completely determined exclusively by using the technical requirements of the design. The first step is an optimum starting point for the following second step for automatically handling and eliminating such conflicts.

公开(公告)号：NL1019180C2

公开(公告)日：2009-05-20

申请号：NL1019180

申请日：2001-10-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LUDWIG BURKHARD ,  MOUKARA MOLELA

IPC: G03F1/00

公开(公告)号：DE10118409B4

公开(公告)日：2006-03-30

申请号：DE10118409

申请日：2001-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHRENS MARCO ,  LUDWIG BURKHARD ,  HUG MARCO

IPC: G03F7/20 ,  G03F1/00 ,  H01L21/312

公开(公告)号：DE10118409A1

公开(公告)日：2002-11-07

申请号：DE10118409

申请日：2001-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AHRENS MARCO ,  LUDWIG BURKHARD ,  HUG MARCO

IPC: G03F1/00 ,  G03F7/20 ,  H01L21/312

Abstract: A process for structuring a resist for field effect transistor gates uses a base mask to leave unexposed regions of the resist as lines (102a,104a,106a) followed by a trimming mask (116) having transparent auxiliary structures (118,120) between the lines. A process for structuring a resist having removable exposed regions and whose unexposed regions define neighboring lines (102a,104a,106a) comprises illuminating through a base mask having transmissive regions (108,110,112,114)along either side of the lines and then through a trimmer mask (116) having a transparent auxiliary structure (118,120) between the lines and extending to their ends.

公开(公告)号：DE10129202C1

公开(公告)日：2002-09-26

申请号：DE10129202

申请日：2001-06-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  HEISMEIER MICHAEL ,  HOFSAES MARKUS ,  NOELSCHER CHRISTOPH

IPC: G03F1/00 ,  G03F1/14

Abstract: The mask has a T-shaped structure (10) with first and second opaque segments (O1,O2). The second segment abuts the middle of a long side of the rectangular first segment to form a T-shape. Transparent segments (T1,T2) lie adjacent to the long sides of the opaque T-shape. A narrow slit (S) at an angle (alpha) of 45 degrees separates first and second transparent segments at one of the 90 degree angles of the opaque T-shape. The top of the T is bordered by a first transparent segment, followed by a third opaque segment (O3), followed by a second transparent segment. Light passing through the two transparent segments leaves with a phase difference of 180 degrees.

公开(公告)号：DE19957542A1

公开(公告)日：2001-07-05

申请号：DE19957542

申请日：1999-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  FRIEDRICH CHRISTOPH ,  HEISSMEIER MICHAEL ,  MOUKARA MOLELA ,  GRIESINGER UWE ,  LUDWIG BURKHARD

IPC: G03F1/30 ,  G03F1/00 ,  H01L21/027 ,  G03F1/14

Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±Delta alpha, whereby Delta alpha a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

公开(公告)号：DE19941400A1

公开(公告)日：2001-03-08

申请号：DE19941400

申请日：1999-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER DIRK ,  LUDWIG BURKHARD ,  JUNGMANN ANGELIKA

IPC: G06F17/50 ,  G03F1/00

Abstract: Data pertaining to a layout is described in a hierarchical form by cells and cell instances and is located in a first grid structure. Data for the mask is generated in a second grid structure. For each cell instance, the context is determined in the second grid structure. Cell variants are determined for cell instances with different contexts by rounding and scaling. Said cell variants contain the data for the mask in the second grid structure whereby rounding and scaling are context-dependent.

公开(公告)号：DE102005005591B3

公开(公告)日：2006-07-20

申请号：DE102005005591

申请日：2005-02-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  MEYER DIRK ,  KOEHLE RODERICK ,  NOELSCHER CHRISTOPH ,  HEISMEIER MICHAEL ,  THIELE JOERG ,  LUDWIG BURKHARD

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

Abstract: The method involves dividing a pattern of a circuit design iteratively, into corresponding base patterns, to classify the parts of the pattern into the structural components which complies with the base patterns. Further base patterns are provided for the parts which are not classified. The geometries of the structural components are optimized and the optimized base patterns are inserted into the circuit design. An independent claim is also included for a use of a structural component geometry optimizing method for the production of a photomask.

公开(公告)号：DE10340611A1

公开(公告)日：2005-03-24

申请号：DE10340611

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00 ,  G03F1/14

Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.

公开(公告)号：DE59812336D1

公开(公告)日：2005-01-05

申请号：DE59812336

申请日：1998-05-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHWALKE UDO ,  LUDWIG BURKHARD

IPC: H01L21/768 ,  H01L23/485

Abstract: A doped region is provided on a substrate. A plane with conductive useful structures and a conductive filler structure is arranged at the surface of the substrate. The conductive filler structure is conductively connected to the doped region. In this way, charging of the conductive filler structure, which is provided for improving the planarity of the circuit arrangement and has no circuit-oriented function, is avoided.