公开(公告)号：DE50111463D1

公开(公告)日：2006-12-28

申请号：DE50111463

申请日：2001-09-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  TIMME HANS-JOERG

IPC: H03H9/17

Abstract: The resonator comprises a first electrode (E1), a second electrode (E2) and a piezoelectric layer (P) arranged between the above. A first acoustic compression layer (V1) is arranged between the piezoelectric layer (E1) and the first electrode (E1) with a higher acoustic impedance than the first electrode (E1).

公开(公告)号：DE10392971D2

公开(公告)日：2005-07-21

申请号：DE10392971

申请日：2003-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ELLAE JUHA SAKARI ,  TIMME HANS-JOERG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H7/42 ,  H01F17/00 ,  H03H7/38 ,  H03H9/00 ,  H03H9/58 ,  H03H9/70

Abstract: The filter circuit has a symmetrical gate (204), an unsymmetrical gate (202), a series circuit filter stage (206) and a symmetry component (208) between the symmetrical gate and the unsymmetrical gate, the symmetry component and the filter stage provided on a common substrate (S). The filter stage can have at least one series bulk acoustic wave resonator and at least one parallel bulk acoustic wave resonator.

公开(公告)号：AT297068T

公开(公告)日：2005-06-15

申请号：AT00964249

申请日：2000-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  SAENGER ANNETTE ,  TIMME HANS-JOERG

IPC: A61B8/00 ,  G10K11/20 ,  H03H3/02

Abstract: An acoustic mirror is described which is formed of at least one first insulating layer, a first metal layer disposed thereon, a second insulating layer disposed thereon and a second metal layer disposed thereon. An auxiliary layer is produced on the first insulating layer whereby a recess extending as far as the first insulating layer is created therein. The first metal layer is substantially deposited and removed by chemical/mechanical polishing until the parts of the first metal layer disposed outside the recess are no longer present. The second metal layer is also produced in a recess with the aid of chemical/mechanical polishing. More than two insulating layers and two metal layers can be provided. The first metal layer and the second metal layer can be produced in the same recess.

公开(公告)号：DE69630501T2

公开(公告)日：2004-08-05

申请号：DE69630501

申请日：1996-08-09

Applicant: INFINEON TECHNOLOGIES AG ,  IBM ,  TOSHIBA KK

Inventor： HASEGAWA ISAHIRO ,  MULLER KARL PAUL ,  POSCHENRIEDER BERNHARD L ,  TIMME HANS-JOERG ,  VAN KESSEL THEODORE

IPC: C23C16/52 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L35/28

Abstract: A temperature control apparatus for single wafer etching tools comprising a cathode electrode, an isolation layer, and chuck means, respectfully, which are vertically stacked to support a wafer to be etched. A layer of thermoelectric elements is disposed between the isolation layer and the chuck means. The layer of thermoelectric elements comprises a center area closed loop of connected Peltier elements and an outer area closed loop of connected Peltier elements. The center area closed loop is coupled to a power source and is arranged to correspond to the center area of the wafer. The outer area closed loop is coupled to a power source and is arranged to correspond to the outer area of the wafer. Accordingly, the temperatures associated with each of the specific areas of the wafer are individually controlled by one of the closed loops.

公开(公告)号：DE10162580A1

公开(公告)日：2003-07-17

申请号：DE10162580

申请日：2001-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  NESSLER WINFRIED ,  MARKSTEINER STEPHAN ,  HANDTMANN MARTIN ,  ELBRECHT LUEDER ,  TIMME HANS-JOERG

IPC: H03H3/04 ,  H03H9/17 ,  H03H3/02 ,  H03H9/54 ,  H01L41/22

Abstract: In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.

公开(公告)号：DE10127655A1

公开(公告)日：2003-01-02

申请号：DE10127655

申请日：2001-06-07

Applicant: INFINEON TECHNOLOGIES AG ,  NOKIA MOBILE PHONES LTD

Inventor： ELLA JUHA ,  TIMME HANS-JOERG ,  AIGNER ROBERT ,  TIKKA PASI

IPC: H03H9/10 ,  H03H9/58 ,  H03H9/60 ,  H03H9/64

Abstract: A bulk acoustic wave (BAW) filter arrangement has a BAW-filter (100) with a first BAW-resonator (R1) and a second BAW-resonator (R3) formed on a substrate. The first BAW-resonator is placed in a series branch of the BAW-filter, while the second BAW-resonator is placed in a parallel branch of the same filter and has an inductive component whose inductance is selected in order to adjust a given property of the second BAW-resonator. A housing (102) accommodates the substrate of the BAW-filter and the inductive component of the second BAW-resonator is formed by an electrical connection (116) between the second BAW-resonator and a grounding pad (110) in the housing.

公开(公告)号：DE19750131C2

公开(公告)日：2002-06-13

申请号：DE19750131

申请日：1997-11-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  TIMME HANS-JOERG

IPC: G01L13/00 ,  G01L9/00 ,  G01L9/12 ,  G01L13/06 ,  H01L49/00 ,  G01L15/00

Abstract: A micromechanical differential pressure sensor device for measuring a pressure difference between two mutually separated spaces or media, in which two absolute pressure measuring devices are monolithically integrated on a single support substrate, in particular on a semiconductor chip. The absolute pressure measuring devices are preferably fabricated by surface micromachining.

公开(公告)号：DE102013101935A1

公开(公告)日：2013-09-05

申请号：DE102013101935

申请日：2013-02-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGL REIMUND ,  HENNECK STEPHAN ,  MAIS NORBERT ,  MEINHOLD DIRK ,  TIMME HANS-JOERG ,  URBANSKY NORBERT ,  VATER ALFRED

IPC: H01L23/50 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/482 ,  H01L23/52

Abstract: Bei einer Ausführungsform beinhaltet ein Verfahren zum Ausbilden eines Halbleiterbauelements das Ausbilden einer Metallleitung (230) über einem Substrat (10) und Abscheiden einer legierenden Materialschicht über einer oberen Oberfläche der Metallleitung (230). Das Verfahren beinhaltet weiterhin das Ausbilden einer Schutzschicht (270) durch Kombinieren der legierenden Materialschicht mit der Metallleitung (230).

公开(公告)号：AT555056T

公开(公告)日：2012-05-15

申请号：AT99952247

申请日：1999-08-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  BEVER THOMAS ,  TIMME HANS-JOERG

IPC: B81B3/00 ,  G01L9/12 ,  B81C1/00 ,  H01L29/84 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.

公开(公告)号：DE102011054377A1

公开(公告)日：2012-04-12

申请号：DE102011054377

申请日：2011-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIMME HANS-JOERG ,  NIKITIN IVAN

IPC: H01L21/56 ,  H01L23/29 ,  H01L23/34 ,  H01L23/48

Abstract: Ein Verfahren umfasst das Bereitstellen eines Halbleiterchips (10) mit einer ersten Hauptoberfläche (11) und einer der ersten Hauptoberflächen (11) gegenüber liegenden zweiten Hauptoberfläche (12). Ein elektrisch isolierendes Material (13) wird auf der ersten Hauptoberfläche (11) des Halbleiterchips (10) unter Verwendung eines Plasmaabscheidungsverfahrens abgeschieden. Ein erstes elektrisch leitfähiges Material (14) wird auf der zweiten Hauptoberfläche (12) des Halbleiterchips (10) unter Verwendung eines Plasmaabscheidungsverfahrens abgeschieden.