公开(公告)号：DE10116875A1

公开(公告)日：2002-10-17

申请号：DE10116875

申请日：2001-04-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  KROENKE MATTHIAS ,  WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507 ,  H01L21/8239

Abstract: Production of an integrated ferroelectric storage device comprises depositing an intermediate oxide (2); forming a ferroelectric capacitor module (1) on the intermediate oxide; structuring; and depositing a hydrogen diffusion barrier (10) on the structured module. Preferred Features: An oxygen barrier lying between the lower capacitor electrode (4) and the plug (8) of the module is formed during the structuring of the capacitor. The hydrogen diffusion barrier is made from a non-conducting material.

公开(公告)号：DE10131491B4

公开(公告)日：2006-06-29

申请号：DE10131491

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRUCHHAUS RAINER ,  ENDERS GERHARD ,  HARTNER WALTER ,  KASKO IGOR ,  KROENKE MATTHIAS ,  MIKOLAJICK THOMAS ,  NAGEL NICOLAS ,  ROEHNER MICHAEL ,  WEINRICH VOLKER

IPC: H01L21/8239 ,  H01L21/02 ,  H01L21/8242

Abstract: A method of fabricating semiconductor memory devices is simplified by providing at least some plug regions, which are provided for contacting storage capacitor devices of a capacitor configuration, such that the plug regions have in each case a region that is elevated above the surface region of a passivation region.

公开(公告)号：DE59813289D1

公开(公告)日：2006-01-26

申请号：DE59813289

申请日：1998-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  ENGELHARDT MANFRED

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108

Abstract: After structuring of a layer using a mask, re-deposited material of the structured layer is removed, after or together with mask removal, by mechanical or chemical-mechanical polishing. Preferred Features: The layer consists of (a) copper, iron, cobalt, nickel, a 4d or 5d transition metal, especially a platinum group metal or platinum group metal oxide; or (b) a ferroelectric material, a high permittivity dielectric material, a perovskite or their precursors. The mask consists of silicon, a silicon oxide (especially SiO2), a metal (especially aluminium or tungsten), a metal nitride (especially TiNx, where x = 0.8 to 1.2 exclusive) or a metal silicide.

公开(公告)号：DE10131491A1

公开(公告)日：2003-01-16

申请号：DE10131491

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BRUCHHAUS RAINER ,  ENDERS GERHARD ,  HARTNER WALTER ,  KASKO IGOR ,  KROENKE MATTHIAS ,  MIKOLAJICK THOMAS ,  NAGEL NICOLAS ,  ROEHNER MICHAEL ,  WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/8242 ,  H01L21/8239

Abstract: Production of a semiconductor storage device comprises: forming a semiconductor substrate (20), a passivating region (21) and/or a surface region (20a, 21a) with a complementary metal oxide semiconductor (CMOS) structure; forming capacitor arrangements (10-1,..., 10-4); and contacting the capacitor arrangements with the CMOS structure using contact regions or plug regions (P1, P2). At least one part of the contact regions or plug regions are formed with a region raised above the surface region of the passivating region. Preferred Features: The contact regions or plug regions are formed in a common process step, preferably after forming the passivating region.

公开(公告)号：DE10105686A1

公开(公告)日：2002-09-05

申请号：DE10105686

申请日：2001-02-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  WEINRICH VOLKER ,  SCHINDLER GUENTHER

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/8242 ,  H01L27/115 ,  H01L27/11502 ,  H01L21/8239

Abstract: The aim of the invention is to provide protection against the oxidation of plug regions (22) in a semiconductor memory device with high integration densities. To achieve this, during a method for producing memory capacitors (10), the thickness of a sub-layer (14) in a sequence of layers (12, 14, 16, 18) is reduced in the vicinity of the plug regions (22) by an intermediate etching process, to obtain a 3D structure during the conventional 2D deposition of the subsequent layers (16, 18).

公开(公告)号：DE10025550A1

公开(公告)日：2001-11-29

申请号：DE10025550

申请日：2000-05-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  ENGELHARDT MANFRED ,  MAZURE-ESPEJO CARLOS

IPC: C23F4/00 ,  H01L21/3213 ,  H01L21/306

Abstract: Plasma etching at temperatures of above 100 deg C comprises applying a polyimide mask before the structure is etched. Preferred Features: The polyimide contains fluorine. The polyimide is formed on the wafer by crosslinking.

公开(公告)号：DE10022656A1

公开(公告)日：2001-11-08

申请号：DE10022656

申请日：2000-04-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  AHLSTEDT MATTIAS ,  SCHINDLER GUENTHER ,  KASTNER MARCUS ,  BEITEL GERHARD ,  WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8246 ,  H01L27/108 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/8242

Abstract: Removing structures from a substrate comprises preparing a substrate with the structures to be removed; applying a sacrificial layer; and removing the structures and the sacrificial layer by polishing. An Independent claim is also included for a process for removing one or more structured layers from a substrate. Preferred Features: The structures are made from a precious metal, especially Pt or Ir, an oxide of a precious metal, a dielectric material or a ferroelectric material. The sacrificial layer is a silicon oxide or silicon nitride layer.

公开(公告)号：DE10022656B4

公开(公告)日：2006-07-06

申请号：DE10022656

申请日：2000-04-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  AHLSTEDT MATTIAS ,  SCHINDLER GUENTHER ,  KASTNER MARCUS ,  BEITEL GERHARD ,  WEINRICH VOLKER

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108

Abstract: A method for removing structures from a substrate is described. The method includes providing a substrate that has the structures that must be removed, applying a sacrifice layer, and removing the structures and the sacrifice layer in a polishing step. The method has the advantage that the sacrifice layer surrounds the structures that must be removed and stabilizes them, so that the structures can be eroded slowly and successively in the subsequent polishing step without breaking off. This prevents a smearing of the material of the structures such as occurs given direct polishing without a sacrifice layer.

公开(公告)号：DE19860084B4

公开(公告)日：2005-12-22

申请号：DE19860084

申请日：1998-12-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  ENGELHARDT MANFRED ,  KREUPL FRANZ ,  SCHIELE MANUELA ,  SAENGER ANNETTE ,  HARTNER WALTER

IPC: H01L21/00 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/304

公开(公告)号：DE10125370C1

公开(公告)日：2002-11-14

申请号：DE10125370

申请日：2001-05-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  MOERT MANFRED ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8239

Abstract: The manufacturing method has a dielectric or ferroelectric layer for integrated capacitors (2) of the semiconductor circuit deposited on an intermediate carrier, which is heated for conversion of the dielectric or ferroelectric layer into a highly polarized phase. The dielectric or ferroelectric layer is subsequently released from the intermediate carrier and reduced into small particles (4) applied to the semiconductor substrate (1) for the semiconductor circuit.