12.
    发明专利
    未知

    公开(公告)号:DE60323577D1

    公开(公告)日:2008-10-30

    申请号:DE60323577

    申请日:2003-07-30

    Applicant: JSR CORP

    Abstract: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R is a hydrogen atom and R and R individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.

    Radiation-sensitive resin composition

    公开(公告)号:SG125883A1

    公开(公告)日:2006-10-30

    申请号:SG200004850

    申请日:2000-09-16

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition comprising (A) a resin containing an acid-dissociable group which is insoluble or scarcely soluble in alkali and becomes alkali soluble when the acid-dissociable group dissociates, comprising the following recurring unit (I), recurring unit (II), and at least one of the recurring units (III-1) and (III-2), and (B) a photoacid generator. The radiation-sensitive resin composition is suitable for use as a chemically-amplified resist showing sensitivity to active radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser, exhibiting superior dry etching resistance without being affected by types of etching gas, having high radiation transmittance, exhibiting excellent basic characteristics as a resist such as sensitivity, resolution, and pattern shape, possessing excellent storage stability as a composition, and exhibiting sufficient adhesion to substrates.

    14.
    发明专利
    未知

    公开(公告)号:DE60025297T2

    公开(公告)日:2006-08-17

    申请号:DE60025297

    申请日:2000-09-14

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition comprising (A) a resin containing an acid-dissociable group which is insoluble or scarcely soluble in alkali and becomes alkali soluble when the acid-dissociable group dissociates, comprising the following recurring unit (I), recurring unit (II), and at least one of the recurring units (III-1) and (III-2), and (B) a photoacid generator. The radiation-sensitive resin composition is suitable for use as a chemically-amplified resist showing sensitivity to active radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser, exhibiting superior dry etching resistance without being affected by types of etching gas, having high radiation transmittance, exhibiting excellent basic characteristics as a resist such as sensitivity, resolution, and pattern shape, possessing excellent storage stability as a composition, and exhibiting sufficient adhesion to substrates.

    15.
    发明专利
    未知

    公开(公告)号:DE60025297D1

    公开(公告)日:2006-03-30

    申请号:DE60025297

    申请日:2000-09-14

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition comprising (A) a resin containing an acid-dissociable group which is insoluble or scarcely soluble in alkali and becomes alkali soluble when the acid-dissociable group dissociates, comprising the following recurring unit (I), recurring unit (II), and at least one of the recurring units (III-1) and (III-2), and (B) a photoacid generator. The radiation-sensitive resin composition is suitable for use as a chemically-amplified resist showing sensitivity to active radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser, exhibiting superior dry etching resistance without being affected by types of etching gas, having high radiation transmittance, exhibiting excellent basic characteristics as a resist such as sensitivity, resolution, and pattern shape, possessing excellent storage stability as a composition, and exhibiting sufficient adhesion to substrates.

    19.
    发明专利
    未知

    公开(公告)号:DE60105523T2

    公开(公告)日:2005-09-29

    申请号:DE60105523

    申请日:2001-11-13

    Applicant: JSR CORP

    Abstract: An anti-reflection coating-forming composition is provided. This composition includes a polymer and a solvent. The polymer has a structural unit represented by the formula (1): wherein R1 is a monovalent atom other than a hydrogen atom or a monovalent group, and n is an integer of 0-4, provided that when n is an integer of 2-4, a plural number of R1's are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group. The anti-reflection coating formed from this composition has a high antireflective effect, does not generate intermixing with a resist film, and enables a good resist pattern profile excellent in resolution and precision in cooperation with a positive or negative resist.

    20.
    发明专利
    未知

    公开(公告)号:DE60102028T2

    公开(公告)日:2004-06-24

    申请号:DE60102028

    申请日:2001-04-05

    Applicant: JSR CORP

    Abstract: A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), wherein A and A are an acid-dissociable monovalent organic group, R is hydrogen, monovalent (halogenated) hydrocarbon, halogen, or amino, R is monovalent (halogenated) hydrocarbon group, or halogen. A method of preparing such a polysiloxane, a silicon-containing alicyclic compound providing this polysiloxane, and a radiation-sensitive resin composition comprising this polysiloxane are also provided. The polysiloxane is useful as a resin component for a resist material, effectively senses radiation with a short wavelength, exhibits high transparency to radiation and superior dry etching properties, and excels in basic resist properties required for resist materials such as high sensitivity, resolution, developability, etc.

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