公开(公告)号：SG10201405047VA

公开(公告)日：2014-10-30

申请号：SG10201405047V

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： VALCURE JR JOHN C ,  ULLAL SAURABH ,  BYUN DANIEL ,  SANTOS ED ,  MAKHRATCHEV KONSTANTIN

Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

公开(公告)号：SG10201404264RA

公开(公告)日：2014-10-30

申请号：SG10201404264R

申请日：2010-06-29

Applicant: LAM RES CORP

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

公开(公告)号：SG194409A1

公开(公告)日：2013-11-29

申请号：SG2013074539

申请日：2009-10-10

Applicant: LAM RES CORP

Inventor： SHIH HONG ,  ULLAL SAURABH ,  HUANG TUOCHUAN ,  FANG YAN ,  MCCHESNEY JON

Abstract: SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCKThe present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.FIGS

公开(公告)号：SG187142A1

公开(公告)日：2013-02-28

申请号：SG2013004346

申请日：2011-07-18

Applicant: LAM RES CORP

Inventor： RICCI ANTHONY ,  ULLAL SAURABH ,  MARTINEZ LARRY

Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

公开(公告)号：SG185670A1

公开(公告)日：2012-12-28

申请号：SG2012085320

申请日：2011-05-17

Applicant: LAM RES CORP

Inventor： RICCI ANTHONY ,  ULLAL SAURABH ,  KANG MICHAEL ,  BUSCHE MATTHEW

Abstract: A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 in fluid communication with the supply line and the return line, temperature T2being at least 10°C above temperature T1; a pre-cooling unit providing liquid at temperature Tpc connected to the inlet and the outlet, temperature Tpc being at least 10C below T1; a pre-heating unit providing liquid at temperature Tph connected to the inlet and the outlet, temperature Tph being at least 10°C above T2; a controller operable to selectively operate valves of the recirculation system to recirculate liquid between the flow passage and the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit.