公开(公告)号：EP1443018A1

公开(公告)日：2004-08-04

申请号：EP03425015.9

申请日：2003-01-15

Applicant: STMicroelectronics S.r.l.

Inventor： Sassolini, Simone ,  Del Sarto, Marco ,  Baldo, Lorenzo

IPC: B81B5/00 ,  G11B5/55 ,  G01C19/56

CPC classification number: H02N1/008 ,  G01C19/5656 ,  G11B5/4826 ,  G11B5/5552 ,  G11B5/596

Abstract: A rotational micro-electro-mechanical structure includes a stator (21), having a plurality of stator electrodes (33, 34), and a rotor (23), which is rotatable with respect to the stator (21) about an axis of relative rotation (A) and has a plurality of rotor electrodes (30), the stator electrodes (33, 34) and the rotor electrodes (30) being comb-fingered; moreover, at least a first group (20a) of stator electrodes (33, 34) and rotor electrodes (30) are parallel to a first plane (P 1 ) that includes the axis of relative rotation (A).

Abstract translation: 旋转微电子机械结构包括具有多个定子电极（33,34）的定子（21）和可相对于定子（21）围绕相对轴线旋转的转子（23） 旋转（A）并且具有多个转子电极（30），定子电极（33,34）和转子电极（30）被梳齿指定; 此外，定子电极（33,34）和转子电极（30）的至少第一组（20a）平行于包括相对旋转轴线（A）的第一平面（P1）。

公开(公告)号：EP1359569A1

公开(公告)日：2003-11-05

申请号：EP02425276.9

申请日：2002-05-03

Applicant: STMicroelectronics S.r.l.

Inventor： Del Sarto, Marco ,  Marchi, Mauro ,  Baldo, Lorenzo ,  Sassolini, Simone

IPC: G11B5/48

CPC classification number: G11B5/4826

Abstract: A read/write assembly for magnetic hard disks includes at least: one supporting element (5, 8); one read/write (R/W) transducer (6); one micro-actuator (10), set between the R/W transducer (6) and the supporting element (5, 8); one electrical-connection structure (11) for connection to a remote device carried by the supporting element (5,8) and connected to the R/W transducer (6) and to the micro-actuator (10) In addition, a protective structure (15), set so as to cover the micro-actuator (10) is made of a single piece with the electrical-connection structure (11).

Abstract translation: 用于磁性硬盘的读/写组件至少包括：一个支撑元件（5,8）; 一个读/写（R / W）传感器（6）; 设置在R / W换能器（6）和支撑元件（5,8）之间的一个微致动器（10）; 一个电连接结构（11），用于连接到由支撑元件（5,8）承载并连接到R / W换能器（6）和微致动器（10）的远程设备。另外，保护结构 （15），以覆盖微致动器（10）的方式由具有电连接结构（11）的单件制成。

公开(公告)号：EP1312580A1

公开(公告)日：2003-05-21

申请号：EP01830712.4

申请日：2001-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： Sassolini, Simone ,  Del Sarto, Marco ,  Frezza, Giovanni ,  Baldo, Lorenzo

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00333

Abstract: A process for the fabrication of devices that integrate protected microstructures, comprising the following steps: forming, in a body (1) of semiconductor material, at least one microstructure (2) having at least one first portion (3) and one second portion (4) which are relatively mobile with respect to one another and are separated from one another by at least one gap region (14), which is accessible through a face (6) of the body (1); and sealing the gap (14). The sealing step includes depositing on the face (6) of the body (1) a layer (15) of protective material, in such a way as to close the gap region (14), the protective layer being such as to enable relative motion between the first portion (3) and the second portion (4) of the microstructure (2).

Abstract translation: 一种制造集成保护微结构的器件的方法，包括以下步骤：在半导体材料的本体（1）中形成至少一个具有至少一个第一部分（3）和一个第二部分（3）的微结构（2） 4），它们相对于彼此相对移动并且通过至少一个可通过主体（1）的面（6）接近的间隙区域（14）彼此分离; 并密封间隙（14）。 密封步骤包括在主体（1）的表面（6）上沉积保护材料层（15），以便封闭间隙区域（14），保护层能够进行相对运动 在微结构（2）的第一部分（3）和第二部分（4）之间。

公开(公告)号：EP2644563A2

公开(公告)日：2013-10-02

申请号：EP13169983.7

申请日：2008-01-23

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Cortese, Mario Francesco

IPC: B81B7/00 ,  G01L19/00 ,  G01L13/02 ,  G01D11/24

CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Electronic device (1, 1a, 1b, 1c, 1d, 1e) which comprises:
- a substrate (2) provided with at least one passing opening (5),
- a MEMS device (7) with function of differential sensor provided with a first and a second surface (9, 10) and of the type comprising at lesat one portion (11) sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface (11a, 11b) thereof, the first surface (9) of the MEMS device (7) leaving the first active surface (11 a) exposed and the second surface (10) being provided with a further opening (12) which exposes said second opposed active surface (11b), the electronic device (1, 1d, 1e) being characterised in that the first surface (9) of the MEMS device (7) faces the substrate (2) and is spaced therefrom by a predetermined distance, the sensitive portion (11) being aligned to the passing opening (5) of the substrate (2), and in that it also comprises
- a protective package (14, 14a, 14b), which incorporates at least partially the MEMS device (7) and the substrate (2) so as to leave the first and second opposed active surfaces (11a, 11b) exposed respectively through the passing opening (5) of the substrate (2) and the further opening (12) of the second surface (10).

Abstract translation: 电子设备（1,1a，1b，1c，1d，1e）包括： - 设置有至少一个通过开口（5）的基板（2）， - 具有差动传感器功能的MEMS装置（7） 第一和第二表面（9,10），并且其类型包括对于与第一和第二相对的有效表面（11a，11b）相对应存在的流体的化学和/或物理变化敏感的一部分（11） 离开第一有源表面（11a）的MEMS器件（7）的第一表面（9）暴露，并且第二表面（10）设置有暴露所述第二相对的有效表面（11b）的另外的开口（12） 所述电子设备（1d，1e）的特征在于，所述MEMS器件（7）的所述第一表面（9）面向所述基板（2）并且与所述第一表面（9）隔开预定距离，所述敏感部分 对准衬底（2）的通过开口（5），并且其还包括 - 保护性封装（14,14a，14b） ），其至少部分地结合MEMS器件（7）和衬底（2），以便分别暴露于通过衬底（2）的通过开口（5）的第一和第二相对的有效表面（11a，11b） 和第二表面（10）的另一个开口（12）。

公开(公告)号：EP2096448A3

公开(公告)日：2012-04-04

申请号：EP09161586.4

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08 ,  G01P15/18

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a combined semiconductor accelerometer and pressure-monitoring device (30) is disclosed, envisaging: providing a wafer (31) of semiconductor material; providing, in a first region (34a) of the wafer (31) a first buried cavity (22) and a first membrane (23), suspended over, and closing at the top, the first buried cavity (22); providing, in a second region (34b) of the wafer (31), a second buried cavity (40) and a second membrane (41), suspended over, and closing at the top, the second buried cavity (40); coupling an inertial mass (25) in a rigid way to the first membrane (23), by forming the inertial mass (25) on top of a surface of the first membrane (23) opposite to the first buried cavity (22); providing, in the first membrane (23), first piezoresistive transduction elements (24) sensitive to strains of the first membrane (23) due to movements of the inertial mass (25) in response to a sensed acceleration and generating corresponding electrical signals, so as to provide an acceleration sensor (35); and providing, in the second membrane (41), second piezoresistive transduction elements (42) sensitive to strains of the second membrane (41) in response to a sensed pressure and generating corresponding electrical signals, so as to provide a pressure sensor (36) integrated with the acceleration sensor (35) in the wafer (31). A combined semiconductor accelerometer and pressure-monitoring device (30) is also disclosed, made with the above manufacturing process.

公开(公告)号：EP1870687A1

公开(公告)日：2007-12-26

申请号：EP06425430.3

申请日：2006-06-23

Applicant: STMicroelectronics S.r.l.

Inventor： Ziglioli, Federico ,  Combi, Chantal ,  Baldo, Lorenzo ,  Riva, Caterina ,  Shaw, Mark Andrew

IPC: G01L19/00 ,  G01L9/00

CPC classification number: G01L19/0038

Abstract: Described herein is an assembly (30) of an integrated device (1) and of a cap (32) coupled to the integrated device; the integrated device (1) is provided with at least a first and a second region (16, 17) to be fluidically accessed from outside, and the cap (32) has an outer portion (32a) provided with at least a first and a second inlet port (35, 36) in fluid communication with the first and second regions (16, 17). In particular, the first and second regions (16, 17) are arranged on a first outer face (20a), or on respective adjacent outer faces (20a, 20c), of the integrated device (1), and an interface structure (38) is set between the integrated device (1) and the outer portion (32a) of the cap (32), and is provided with a channel arrangement (39, 40) for routing the first and second regions (16, 17) towards the first and second inlets (35, 36).

Abstract translation: 在所描述的是一个集成的装置的组件（30）（1）耦合到所述集成装置的帽（32）的和; 集成器件（1）设置有至少一个第一和一个第二区域（16，17）以流体方式从外部访问，并且所述盖（32）具有在设置有至少一个第一和一个外部分（32A） 在与所述第一和第二区域（16,17）流体连通的第二入口端口（35，36）。 特别地，所述第一和第二区域（16,17）被布置在第一外表面（20A）上或集成器件（1），以及respectivement相邻的外表面（20A，20C）（对接结构38 ）被设置在集成器件（1）和盖（32的外部分（32A）之间），设置有用于朝向所述路由所述第一和第二区域（16,17）的信道配置（39,40） 第一和第二入口（35，36）。

公开(公告)号：EP1775259A1

公开(公告)日：2007-04-18

申请号：EP05425719.1

申请日：2005-10-14

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Vigna, Benedetto ,  Ziglioli, Federico Giovanni ,  Baldo, Lorenzo

IPC: B81B7/02

CPC classification number: B81C1/0023 ,  B81B7/02 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In a substrate-level assembly (22), a device substrate (20) of semiconductor material has a top face (20a) and houses a first integrated device (1), provided with a buried cavity (3), formed within the device substrate (20), and with a membrane (4), suspended over the buried cavity (3) in the proximity of the top face (20a). A capping substrate (21) is mechanically coupled to the device substrate (20) above the top face (20a) so as to cover the first integrated device (1), in such a manner that a first empty space (25) is provided above the membrane (4). Electrical-contact elements (28a, 28b) electrically connect the integrated device (1) with the outside of the substrate-level assembly (22). The device substrate (20) integrates at least a further integrated device (1', 10) provided with a respective membrane (4'); and a further empty space (25'), fluidically isolated from the first empty space (25), is provided over the respective membrane (4') of the further integrated device (1', 10).

Abstract translation: 在衬底级组件（22）中，半导体材料的器件衬底（20）具有顶面（20a）并且容纳设置有器件衬底（3）内的掩埋腔（3）的第一集成器件（1） （20），以及在所述顶面（20a）附近悬挂在所述掩埋腔（3）上的膜（4）。 封盖基板（21）在上表面（20a）之上机械耦合到器件基板（20），以便覆盖第一集成器件（1），使得第一空间（25）设置在上面 膜（4）。 电接触元件（28a，28b）将集成器件（1）与衬底级组件（22）的外部电连接。 装置基板（20）至少集成有设置有相应膜（4'）的另外的集成装置（1'，10）; 并且在另一个集成装置（1'，10）的相应膜（4'）上方设置有与第一空空间（25）流体隔离的另外的空的空间（25'）。

公开(公告)号：EP1707931A1

公开(公告)日：2006-10-04

申请号：EP05425183.0

申请日：2005-03-31

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Sassolini, Simone ,  Del Sarto, Marco

IPC: G01L1/20

CPC classification number: G06F3/041 ,  G01L9/0045 ,  G01L9/0054 ,  G01L19/141 ,  G01L19/147 ,  G06F3/0338 ,  H01H13/785 ,  H01H2201/02 ,  H01H2201/036 ,  H01H2221/012 ,  H01H2239/01 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: In a data-input device (4) an actuator element (6) that can be manually actuated, and a sensor (9) mechanically coupled to the actuator element (6). The sensor (9) is formed in a body (10) of semiconductor material housing a first sensitive element (11), which detects the actuation of the actuator element (6) and generates electrical control signals. The first sensitive element (11) is a microelectromechanical pressure sensor, formed by: a cavity (24) made within the body (10); a diaphragm (25) made in a surface portion of the body (10) and suspended above the cavity (24); and piezoresistive transducer elements (26) integrated in peripheral surface portions of the diaphragm (25) in order to detect its deformations upon actuation of the actuator element (6).

Abstract translation: 在数据输入装置（4）中，可以手动致动的致动器元件（6）和机械地联接到致动器元件（6）的传感器（9）。 传感器（9）形成在容纳有第一敏感元件（11）的半导体材料的本体（10）中，该第一敏感元件（11）检测致动元件（6）的致动并产生电控制信号。 第一敏感元件（11）是微机电压力传感器，其通过：在主体（10）内制成的空腔（24）形成。 在所述主体（10）的表面部分中形成并悬浮在所述空腔（24）上方的隔膜（25）; 以及压电换能器元件（26），其集成在隔膜（25）的外周表面部分中，以便在致动元件（6）致动时检测其变形。

公开(公告)号：EP1577656A1

公开(公告)日：2005-09-21

申请号：EP04425197.3

申请日：2004-03-19

Applicant: STMicroelectronics S.r.l.

Inventor： Villa, Flavio Francesco ,  Barlocchi, Gabriele ,  Corona, Pietro ,  Vigna, Benedetto ,  Baldo, Lorenzo

IPC: G01L9/00

CPC classification number: G01L9/0073 ,  G01L9/0045

Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate (2), trenches (6a) are dug and delimit walls (7a); a closing layer (10) is epitaxially grown, that closes the trenches (6a) at the top and forms a suspended membrane (13); a heat treatment is performed so as to cause migration of the silicon of the walls (7a) and to form a closed cavity (11) underneath the suspended membrane; and structures (25a, 25b, 26a-26d) are formed for transducing the deflection of the suspended membrane (13) into electrical signals.