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公开(公告)号：JPH08116131A
公开(公告)日：1996-05-07
申请号：JP31531194
申请日：1994-12-19
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： BOKU KOUKUN , BOKU MINSHIYU , YU HEISHIYUU
Abstract: PURPOSE: To provide a method for manufacturing an upper surface emission microlaser where an electrode can be formed easily and a current can be injected more efficiently by forming an electrode on the side surface of a resonator that is a projecting structure. CONSTITUTION: A substrate, where a lower mirror layer 2, an active layer 3, and an upper mirror layer 4 are successively grown, is etched onto a compound semiconductor substrate, a metal is deposited on the entire surface of a projecting part in a recessed and projecting structure which is etched, and the metal and the active layer 3 are subjected to ion-beam etching, thus forming a side surface electrode 9. After that, a polyimide layer 10 is covered, until the recessed and projecting structure can be completely covered, one portion of the polyimide layer 10 is eliminated until one portion of the side electrode 9 is exposed, a wiring electrode 11 is wired to the side surface of the exposed side surface electrode 9, a photoresist film and a protected film that remains at the projecting part for discharging laser beams upward are successively eliminated, and the surface of the upper mirror layer 4 is released.
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232.发明专利
公开(公告)号：JPH08115310A
公开(公告)日：1996-05-07
申请号：JP31386194
申请日：1994-12-16
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： GO SOUKUN
Abstract: PURPOSE: To obtain a new error function for improving the algorithm performance for learning the reverse propagation of a multilayered perceptron. CONSTITUTION: When a learning pattern x=(x1 , x2 ,..., xNO) is inputted to a multilayered perceptron composed of L layers, calculation is made in all directions (S1), the output error signal of an output layer is calculated (S2), the error signal of a lower layer is calculated through reverse propagation (S3), and the weighted value of respective hierarchies is changed (S4). This proposed error function reduces the occurrence of such a phenomenon that an output node is inappropriately saturated from the learning process of a neuro network by generating a strong error signal when the difference between the target value and output value of the output layer becomes larger. When the target value approaches the output value, the error function prevents the neuro network from excessively learning the learning pattern by generating a weak error signal.
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公开(公告)号：JPH0846630A
公开(公告)日：1996-02-16
申请号：JP7681995
申请日：1995-03-31
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUNICATION
Inventor： JEON BYUNG CHUN , DO MI SUN , KIM YOUNG SUN , HAN CHI MOON
IPC: G06F13/00 , H04L12/28 , H04L12/715 , H04L12/749 , H04L12/951 , H04Q11/04
Abstract: PURPOSE: To provide equipment and its method for large capacity connectionless communication appliable to all the public and private networks. CONSTITUTION: This equipment is provided with a lot of terminal means 30 and 40 for performing the transformation and inverse transformation of connectionless frame transmitted from the network to a cell, requesting the setting of virtual connection when the frame is generated and outputting the cell while using the value of VCI showing the set connection when the connection is set and a lot of connectionless data service means 10 for setting the virtual connection according to the setting request of virtual connection from the terminal means, transmitting the value of set VCI through the terminal means and exchanging the cells transmitted from the terminal means.
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公开(公告)号：JPH07297685A
公开(公告)日：1995-11-10
申请号：JP31732494
申请日：1994-12-20
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： BOKU GIYONRIYUU , JIYO SEIIKU , SUNATORI MASUHIDE
Abstract: PURPOSE: To simplify configuration requiring no additional circuit for inserting one additional bit into the output of a pseudo random number sequence (PN) by generating a new comparison value corresponding to a PN mask value, while using a comparison value translator. CONSTITUTION: After an initial LSSR load state signal has been received, a PN generator (LSSR) 100 executes shift operation, based on a sequential enable signal and generates a PN sequence. After the initial comparison value has been received, a comparison value translator 500 converts that value to a value corresponding to PN mask data. A comparator 200 compares the output of PN generator 100 with the converted comparison value. A D flip-flop 110, inverter 120 and an AND gate 130 are operated as a means for adding '0' of one bit at a prescribed bit position, after delaying the LSSR state value for one cycle when the LSSR state value is equal with the converted comparison value.
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公开(公告)号：JPH07284107A
公开(公告)日：1995-10-27
申请号：JP32694394
申请日：1994-12-28
Applicant: KOREA TELECOMMUNICATION , KOREA ELECTRONICS TELECOMM
Inventor： RI SOUBI , TEI SHIYUUKOU , YASU CHITOKU
IPC: H04N19/503 , G06T9/00 , H03M7/36 , H04N7/24 , H04N19/20 , H04N19/21 , H04N19/423 , H04N19/50 , H04N19/527 , H04N19/80 , H04N19/85 , H04N7/32
Abstract: PURPOSE: To express much more information with a little data by extracting motion not for the unit of a block but for the unit of a frame and expressing a transformed section with a border and a volume so as to facilitate the recognition of that transformed section. CONSTITUTION: A synthesizer 18 selects only a section corresponding to a 1st change detection mask from the source video of current frame. At an initial dividing part 19, the border is extracted by an object border tracing method for tracing the border section (contour section) of visually sensitive object. A motion detector 20 places the initially divided source video of current frame and a 2nd change detection mask while overlapping them, regards a section having the high ratio to be overlapped with the 2nd change detection mask as a really moving section and selects such a section out of initially divided areas. Then, a final dividing part 21 extracts an area simplified as a while by mutually joining areas which are precisely divided more than required although having similar characters. Further, the border information of final area simplified by the final dividing part 21 and volume information as the character in the area express the transformed section.
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Patent Agency Ranking
公开(公告)号：JPH07202873A
公开(公告)日：1995-08-04
申请号：JP29122694
申请日：1994-11-25
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SAI SOUKUN , BOKU FUMIHARU , KAKU MEISHIN , SAI KAIKIYOKU
Abstract: PURPOSE: To supply a stabilized cock even when the input of a data signal or power supply is not normal. CONSTITUTION: When power is normally supplied and data signal is normally inputted, a loop selection switch 30 outputs a state '1' and a 1st loop circuit is selected. At this time, the phase of the data signal is compared with a clock outputted from a voltage controlled oscillator(VCO) 4 and a synchronizing clock is generated. In the case of restoring the system after a short-circuiting of a transmission line, the transmission interruption of a data signal or the interruption of power supply, a data signal monitoring part 40 or a power supply monitoring part 50 outputs a state '1', so that the switch 30 selects a 2nd loop. Then the phase of a reference clock built in the system itself is compared with that of a clock outputted from a VCO 28 to generate a synchronizing clock.
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公开(公告)号：JPH07202705A
公开(公告)日：1995-08-04
申请号：JP29988094
申请日：1994-12-02
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SOU GENTETSU , GO SHIYOUJIYUN , RI SHIYOURETSU , SAI KAIKIYOKU , BAN SUTSUPU SON
Abstract: PURPOSE: To provide an accurate capacitor type voltage divider circuit having reduced power consumption by utilizing capacitor system instead of an existing resistor system. CONSTITUTION: Plural switching sections 311 to 313 are driver in accordance with predetermined 1st and 2nd clock signals 301, 305 and provide three reference voltage levels VR, VM, VSS to respective voltage divider capacitors 323, 324. A voltage divider section divides the reference voltage levels VR, VM, VSS to required values. In this case, output voltage (Vri) is expressed by Vri=(VR×Ci2+VSS×Ci1)/(Ci1+Ci2), where Ci1, Ci2 are voltage dividing capacitance values.
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公开(公告)号：JPH07202651A
公开(公告)日：1995-08-04
申请号：JP29977094
申请日：1994-12-02
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SOU GENTETSU , GO SHIYOUJIYUN , RI SHIYOURETSU , SAI KAIKIYOKU , BAN SUTSUPU SON
Abstract: PURPOSE: To suppress the consumption of currents by instantaneously changing the signal levels of two output terminals for outputting current signals when the logical level of a latch signal is changed, and in steady operation, outputting no current signal. CONSTITUTION: At the time of latch operation holding a latch signal LB at a high logical level, current signals I51, I52 converted by a signal conversion part 50 are supplied to transistors(TRs) Q81, Q82 in an amplification/ determination part 80 through TRs Q64, Q62 in a switching part 60. When the signal LB is at a low logical level and there is no latch operation, the voltage levels of output terminals OUT1, OUT2 are held at a high logical level by a high level holding part 70 to set up an output holding state. Only during a steady operation, a circuit current is turned to '0' by the output signal feedback of an output feedback part 90. Consequently only when the logical level of the signal LB is changed, the signal levels of the terminals OUT1, OUT2, are instantaneously changed and allowed to flow out from the comparator. Since there is no current outflow during stready operation, current consumption can be suppressed.
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239.发明专利
公开(公告)号：JPH07202349A
公开(公告)日：1995-08-04
申请号：JP30959694
申请日：1994-11-18
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： RI KAIKEN , RI SAICHIN , KIN HOYUU
IPC: H01L33/06 , H01L33/20 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/20 , H01S5/34 , H01S5/343 , H01S3/18 , H01L33/00
Abstract: PURPOSE: To easily manufacture quantum wire laser diode by utilizing a molecular beam diffraction due to the shadow mask of a fine beam by MBE method. CONSTITUTION: On a GaAs substrate 1, an n -GaAs layer 2, an n -AlGaAs layers 3, an n -AlGaAs layers 4 are grown sequentially. Then, on the n -AlGaAs layers 4, a quantum wire structure is formed by utilizing a molecular beam diffraction. The distance between a shadow diffraction mask 6, which is used for that and a surface where a quantum wire 8, is generated is adjusted, and an i-AlAs layer 5 is grown with only AlAs for a mask to be the shadow diffraction mask 6 as a selective etching layer, and over it, the i-GaAs layer 6 which is to be a shadow diffraction mask is grown. For the i-GaAs layer 6 to be a diffraction mask, a photoresist layer 7 is coated on the i-GaAs layer 6. Thus, a quantum wire layer diode is manufacture easily.
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公开(公告)号：JPH07201734A
公开(公告)日：1995-08-04
申请号：JP28490994
申请日：1994-11-18
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： RI SHIYOUSHIYOU , IN ZENJIN , KIN HOYUU , KIYOU SOUGEN
IPC: B82Y10/00 , B82Y40/00 , H01L21/20 , H01L21/203
Abstract: PURPOSE: To provide a stainless, no-potential heterojunction thin film by remov ing an oxide film and a different kind of thin film from a V-groove part by using a selective dry etching method and then removing the remaining film of oxide. CONSTITUTION: On the surface of a single-crystal thin film 1, a pattern is formed which includes lines repeated at specific intervals. Then etching is carried out to form grooves (V-grooves), which are repeated at intervals corresponding to the line pattern and is sectioned into a V-shape on the surface of the single- crystal thin film 1. On this surface, a different kind of thin film 2 in a V-groove pattern, having a grating mismatched with the thin film 1 is grown. The majority or the whole of grating mismatching potential is locally distributed because of the presence of the V-grooves. On the different kind of thin film 2, an oxide film 3 is vapor-deposited. Then the oxide film 3 and the different kind of thin film 2 at the V-groove part where the potentials are locally distributed are removed, and furthermore the oxide film 3 is removed.
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