公开(公告)号：JP2001267266A

公开(公告)日：2001-09-28

申请号：JP2000390650

申请日：2000-12-22

Applicant: AXCELIS TECH INC

Inventor： BERNSTEIN JAMES DAVID ,  KELLERMAN PETER L ,  DENHOLM STUART A

IPC: B01J19/08 ,  C23C14/04 ,  C23C14/48 ,  H01J37/32 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266

Abstract: PROBLEM TO BE SOLVED: To solve a problem pertaining to emission gas of photoresist resulting from implantation of plasma immersion ions. SOLUTION: Ions are implanted into a substrate having a photoresist P by plasma immersion ion implantation method. In this method, first gas is ionized in a processing chamber 12 to generate electrically inactive ions which are caused to react on the photoresist to generate an emission gas substance and that gas substance is discharged constantly from the processing chamber 12 so that it is not ionized. Furthermore, second gas is ionized in the processing chamber 12 to generate electrically active ions and ion species thereof charged positively are implanted into the surface of the substrate. Since the photoresist is hardened prior to ion implantation, gas is ionized in the processing chamber to generate positive ions and electrons. Electrons are attracted first to the substrate and positive ions are implanted into the substrate after the photoresist is hardened thus preventing gas emission of photoresist.

公开(公告)号：JP2001250856A

公开(公告)日：2001-09-14

申请号：JP2000380353

申请日：2000-12-14

Applicant: AXCELIS TECH INC

Inventor： RYAN KEVIN T ,  KELLERMAN PETER L ,  FURANKU SHINKUREA ,  ALLEN ERNEST E JR ,  FISH ROGER B

IPC: B65G49/00 ,  C23C14/48 ,  F16K3/314 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a wafer treating device for increasing wafer treatment capacity by decreasing contamination in a treatment chamber, and a method for accessing the wafer treating device. SOLUTION: A wafer treating device 200 is provided with a treatment chamber 202 having upper and lower parts, and an annular ring valve 210 that is engaged to one of both the parts. The ring valve 210 can be operated to perform treatment by closing the treatment chamber 202 at a first position, and to perform access by releasing the treatment chamber 202 at a second position. The ring valve at the first position forms a uniform surface at the inner periphery part of the closed treatment chamber, thus making uniform the treatment state in the treatment chamber. The access method for that purpose includes a step for closing an access port in the treatment chamber for moving the ring valve 202 in the treatment chamber from the first position that cannot be accessed to the second position for opening the access port.

公开(公告)号：JP2001216935A

公开(公告)日：2001-08-10

申请号：JP2000385315

申请日：2000-12-19

Applicant: AXCELIS TECH INC

Inventor： VANDERBERG BO HARALD

IPC: C23C14/48 ,  H01J37/24 ,  H01J37/248 ,  H01J37/317 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To reduce a loss time for ion beam by hardening a power supply for an ion implantation device. SOLUTION: At least one power supply 64 to supply a voltage for at least one electrode 62 is integrated with a switch device capable of mitigating overload of the electrode 62 where the power supply 64 and the electrode 62 are decoupled in a certain threshold. Also, the method for hardening the power supply includes such steps as watching the electric current from at least one power supply driving at least one electrode, and of insulating the source from the electrode if the current is larger than a certain level of threshold by deciding the level at the threshold.

公开(公告)号：JP2001194075A

公开(公告)日：2001-07-17

申请号：JP2000307572

申请日：2000-10-06

Applicant: AXCELIS TECH INC

Inventor： SHAJII AJI ,  HEBB JEFFREY PAUL

IPC: G01N21/27 ,  F27B5/18 ,  F27D21/00 ,  G01J5/00 ,  G01J5/02 ,  G01J5/04 ,  G01J5/10 ,  H01L21/205 ,  H01L21/26 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a system and method for determining stray light in a heat treatment furnace. SOLUTION: In a system and method for determining the stray radiation (stray light) within a heating chamber 74 of a heat-treatment apparatus 22, the stray radiation is determined by moving an unheated wafer to a plurality of longitudinal positions, and measuring with a detector 36 the amount of radiation reflected from the wafer in each longitudinal direction. The total measured radiation is then correlated with the stray radiation component of the total radiation.

公开(公告)号：JP2001189305A

公开(公告)日：2001-07-10

申请号：JP2000337593

申请日：2000-11-06

Applicant: AXCELIS TECH INC

Inventor： HAN QUIGYAN ,  SAKTHIVEL PALANI ,  RUFFIN RICKY R ,  CARDOSO ANDRE G

IPC: H01L21/302 ,  G01N21/68 ,  G03F7/42 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a perfect method by which the ending point of ashing for non oxygen plasma peeling treatment can be detected accurately. SOLUTION: In this method of deicing the ending point of non-oxygen plasma peeling treatment, used at the working of a semiconductor wafer, and non- oxygen plasma is generated by exciting a gas composition, containing a nitrogen gas and a reactive gas and is made to react to a substrate 88 carrying a photoresist/residues. The ending point is decided by optically measuring the first opically discharged signal of the resulted product of an oxygen-free resection at a wavelength of about 387 nm. When the plasma does not react to the substrate 88 any longer, the generating time of the optically discharged signal with the wavelength of about 387 nm is decided as the ending point and is displayed that the photoresist/residues are removed from the wafer. It is also possible to decide the ending point by monitoring the second optically discharged signal of the resulted product of the oxygen-free reaction at wavelengths of about 358 nm and 431 nm.

公开(公告)号：JP2001110775A

公开(公告)日：2001-04-20

申请号：JP2000234323

申请日：2000-08-02

Applicant: AXCELIS TECH INC

Inventor： HAN QINGYUAN ,  DAHIMENE MAHMOUD ,  RUFFIN RICKY ,  PALANIKUMARAN SAKTHIVEL ,  BERRY IVAN LOUIS III

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a plasma stripping method, having a high selective ratio and a high processing capacity and a dry ashing process. SOLUTION: This is a method of removing a photoresist 16 and/or residues after etching from an exposed low K dielectric layer 14 and makes a non-oxygen plasma, having electrically neutral particles and charged particles, by exposing a non-oxygen gas to an energy source. Thereafter, the charge particles are selectively removed from the plasma. The electrically neutral particles react with the photoresist 16 and/or the residues after etching to form a volatile gas to be removed from a wafer by a gas flow. The gas composition of the non-oxygen plasma comprises a gas containing hydrogen and a gas containing fluorine, wherein the gas containing fluorine is about 10% or less of the gas composition.

公开(公告)号：WO2010008467A3

公开(公告)日：2010-03-18

申请号：PCT/US2009003739

申请日：2009-06-23

Applicant: AXCELIS TECH INC ,  GRANT JOHN ,  SPLINTER PATRICK

Inventor： GRANT JOHN ,  SPLINTER PATRICK

IPC: H01J37/09 ,  H01J37/317

CPC classification number: H01J37/04 ,  H01J37/05 ,  H01J37/244 ,  H01J2237/022 ,  H01J2237/0455 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578

Abstract: An ion implantation system (100) comprising an ion source (116) configured to generate an ion beam (104) along a beam path (136), a mass analyzer (130) is located downstream of the ion source wherein the mass analyzer is configured to perform mass analysis of the ion beam and a beam complementary aperture (330) located downstream of the mass analyzer and along the beam path, the beam complementary aperture having a size and shape corresponding to a cross-sectional beam envelope of the ion beam.

Abstract translation: 一种离子注入系统（100），其包括被配置为沿着光束路径（136）产生离子束（104）的离子源（116），质量分析器（130）位于所述离子源的下游，其中所述质量分析器被配置 对离子束进行质量分析和位于质量分析器下游并且沿着光束路径的光束互补孔径（330），所述光束互补孔具有对应于离子束的横截面束包络的尺寸和形状。

公开(公告)号：WO2008070003A3

公开(公告)日：2008-08-07

申请号：PCT/US2007024698

申请日：2007-11-30

Applicant: AXCELIS TECH INC ,  FERRARA JOSEPH ,  MITCHELL ROBERT

Inventor： FERRARA JOSEPH ,  MITCHELL ROBERT

IPC: H01L21/00 ,  H01L21/677

CPC classification number: H01L21/67213 ,  C23C14/48 ,  H01L21/67201 ,  H01L21/67265 ,  H01L21/67745

Abstract: An ion implantation apparatus, system, and method are provided for transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.

Abstract translation: 提供一种用于在真空和大气压之间传送多个工件的离子注入装置，系统和方法，其中对准机构可操作以对准多个工件以便大体上同时传送到双工件装载锁定室。 对准机构包括表征装置，电梯和用于支撑两个工件的两个垂直对齐的工件支撑件。 第一和第二大气机器人被配置为一般在负载锁定模块，对准机构和FOUP之间同时传送两个工件。 第三和第四真空机器人被配置为在加载锁模块和处理模块之间一次传送一个工件。

公开(公告)号：WO2008045458A2

公开(公告)日：2008-04-17

申请号：PCT/US2007021615

申请日：2007-10-10

Applicant: AXCELIS TECH INC ,  LEE W DAVIS ,  COLVIN NEIL

Inventor： LEE W DAVIS ,  COLVIN NEIL

IPC: H01J37/244 ,  G01T1/29 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A Faraday cup structure for use with a processing tool. The cup structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the ion beam current. The electrically conductive strike plate is fronted by a mask for dividing an ion beam intercepting cross section into regions or segments. The mask including walls extending to the strike plate for impeding ions reaching the sensor and particles dislodged from the sensor from entering into the evacuated region of the processing tool.

Abstract translation: 法拉第杯结构，用于加工工具。 杯结构具有连接到电路的导电冲击板，用于监测撞击撞击板的离子以获得离子束电流的指示。 导电冲击板由用于将离子束截断截面分成区域或区段的掩模前面。 掩模包括延伸到冲击板的壁，用于阻止到达传感器的离子和从传感器移出的颗粒进入加工工具的抽空区域。

公开(公告)号：WO2007136722A2

公开(公告)日：2007-11-29

申请号：PCT/US2007011863

申请日：2007-05-17

Applicant: AXCELIS TECH INC ,  VANDERBERG BO ,  BENVENISTE VICTOR ,  FALLON JOHN ,  POKIDOV ILYA

Inventor： VANDERBERG BO ,  BENVENISTE VICTOR ,  FALLON JOHN ,  POKIDOV ILYA

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/304 ,  H01J37/32467 ,  H01J2237/002 ,  H01J2237/082 ,  H01J2237/31701

Abstract: An exemplary ion source for creating a stream of ions has an aluminum alloy arc chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A temperature sensor monitors temperatures within the arc chamber and provides a signal related to sensed temperature. A controller monitors sensed temperature as measured by the sensor and adjusts the temperature to maintain the sensed temperature within a range.

Abstract translation: 用于产生离子流的示例性离子源具有至少部分地限定电弧室的电离区域的铝合金电弧室体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 温度传感器监测电弧室内的温度，并提供与感测温度相关的信号。 控制器监测由传感器测量的感测温度，并调节温度以将感测到的温度保持在一定范围内。