公开(公告)号：US06774378B1

公开(公告)日：2004-08-10

申请号：US10681511

申请日：2003-10-08

Applicant: Yongzhang Huang ,  Xiangyang Wu ,  Hans J. Rutishauser

Inventor： Yongzhang Huang ,  Xiangyang Wu ,  Hans J. Rutishauser

IPC: H01J37317

CPC classification number: H05H7/04

Abstract: The present invention concerns a method of tuning a plurality of electrostatic quadrupoles used for focusing an ion beam implanter. The steps of the method include: classifying the plurality of electrostatic quadrupoles into one of a predetermined number of groups, and for each of the predetermined number of groups, tuning the quadrupoles in the group by iteratively substituting values for a voltage ton be applied to each of the quadrupoles in the group using a multi-variable heuristic algorithm and concurrently measuring final beam current measured downstream of the ion accelerator to determine a set of applied voltage values that maximize the final beam current among those applied voltage values tested and utilizing the set of applied voltage values to tune the quadrupoles in the group. If the resulting ion beam is suitable, utilizing the determined applied voltages to tune the quadrupoles. If the resulting ion beam is not suitable, changing the predetermined number of groups and repeating the steps of the method.

Abstract translation: 本发明涉及一种调谐用于聚焦离子束注入机的多个静电四极杆的方法。 该方法的步骤包括：将多个静电四极杆分类为预定数量的组中的一个，并且对于每个预定数量的组，通过迭代地将电压ton的值应用于每个组来调谐组中的四极， 的组合中的四极体使用多变量启发式算法，并同时测量在离子加速器下游测量的最终束电流，以确定一组施加的电压值，其使所测量的所施加电压值中的最终束电流最大化，并利用该组 施加的电压值来调谐组中的四极。 如果所得到的离子束是合适的，则利用所确定的施加的电压来调谐四极杆。 如果所得到的离子束不合适，则改变预定数量的组并重复该方法的步骤。

公开(公告)号：US07994488B2

公开(公告)日：2011-08-09

申请号：US12108890

申请日：2008-04-24

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: G21K1/00

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/3007 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/24528

Abstract: An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

Abstract translation: 一种离子注入系统，包括沿光束路径产生离子束的离子源，离子源下游的质量分析器组件，其对离子束执行质量分析和角度校正;分辨孔径电极，包括至少一个电极 所述质量分析器部件并且沿着所述光束路径具有根据所选择的质量分辨率和光束包络的尺寸和形状;在所述分辨孔径电极下游的偏转元件改变离开偏转元件的离子束的路径;减速电极 在偏转元件的下游，使离子束减速，在终端站内的支撑平台，用于保持和定位植入有带电离子的工件，并且其中终端站逆时针安装大约八度，使得偏转的离子束垂直 到工件。

公开(公告)号：US07701230B2

公开(公告)日：2010-04-20

申请号：US11742178

申请日：2007-04-30

Applicant: John Zheng Ye ,  Michael Paul Cristoforo ,  Yongzhang Huang ,  Michael A. Graf ,  Bo H. Vanderberg

Inventor： John Zheng Ye ,  Michael Paul Cristoforo ,  Yongzhang Huang ,  Michael A. Graf ,  Bo H. Vanderberg

IPC: G01R27/08 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/30477

Abstract: One embodiment of the invention relates to an apparatus for profiling an ion beam. The apparatus includes a current measuring device having a measurement region, wherein a cross-sectional area of the ion beam enters the measurement region. The apparatus also includes a controller configured to periodically take beam current measurements of the ion beam and to determine a two dimensional profile of the ion beam by relating the beam current measurements to sub-regions within the current measuring device. Other apparatus and methods are also disclosed.

Abstract translation: 本发明的一个实施例涉及一种用于对离子束进行成像的装置。 该装置包括具有测量区域的电流测量装置，其中离子束的横截面积进入测量区域。 该装置还包括控制器，其被配置为周期性地对离子束进行束电流测量，并且通过将束电流测量值与当前测量装置内的子区域相关联来确定离子束的二维轮廓。 还公开了其它装置和方法。

公开(公告)号：US07579604B2

公开(公告)日：2009-08-25

申请号：US11445722

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

Abstract translation: 提供了用于减轻与离子注入相关的污染的系统，方法和装置。 提供了一种位于离子源和终端之间的离子源，终端站和质量分析器，其中离子源由离子源形成，并且基于位置，选择性地通过质量分析器传送到终端站 光束挡块组件。 光束停止组件选择性地防止离子束进入和/或离开质量分析器，其中最小化在诸如离子注入系统的启动的过渡期间与不稳定离子源相关联的污染。

公开(公告)号：US07557363B2

公开(公告)日：2009-07-07

申请号：US11543346

申请日：2006-10-04

Applicant: Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

Inventor： Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703

Abstract: A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

Abstract translation: 一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。

公开(公告)号：US07488958B2

公开(公告)日：2009-02-10

申请号：US11074435

申请日：2005-03-08

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: G21K5/10

CPC classification number: H01J37/08 ,  H01J37/3171

Abstract: A system, apparatus, and method for changing source gases used for ion implantation is provided. A source chamber has a housing having one or more sidewalls and an extraction plate, wherein the one or more sidewalls and the extraction plate enclose an interior region of the source chamber. One or more inlets provide a fluid communication between one or more ignitable material sources and the interior region. An extraction aperture in the extraction plate provides a fluid communication between the interior region of the source chamber and a beam path region external to the source chamber. One or more diffusion apertures in the one or more sidewalls of the housing further provide a fluid communication between the interior region and a diffusion region external to the ion source chamber, wherein deposited ions are operable to diffuse out of the source chamber through the diffusion apertures.

Abstract translation: 提供了一种用于改变用于离子注入的源气体的系统，装置和方法。 源室具有壳体，其具有一个或多个侧壁和提取板，其中所述一个或多个侧壁和所述提取板围绕所述源室的内部区域。 一个或多个入口提供一个或多个可点燃材料源和内部区域之间的流体连通。 提取板中的提取孔提供源室的内部区域与源室外部的光束路径区域之间的流体连通。 壳体的一个或多个侧壁中的一个或多个扩散孔还提供了内部区域和离子源室外部的扩散区域之间的流体连通，其中沉积的离子可操作以通过扩散孔扩散出源腔室 。

公开(公告)号：US20080067433A1

公开(公告)日：2008-03-20

申请号：US11441609

申请日：2006-05-26

Applicant: Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

Inventor： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/30455 ,  H01J2237/31703 ,  Y10T307/937 ,  Y10T307/951 ,  Y10T307/957

Abstract: The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

公开(公告)号：US07655930B2

公开(公告)日：2010-02-02

申请号：US11689769

申请日：2007-03-22

Applicant: Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

Inventor： Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

IPC: H01J37/08 ,  H01J7/24

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

公开(公告)号：US07566887B2

公开(公告)日：2009-07-28

申请号：US11648979

申请日：2007-01-03

Applicant: Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

Inventor： Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

IPC: G21K5/00

CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

公开(公告)号：US06881966B2

公开(公告)日：2005-04-19

申请号：US10461702

申请日：2003-06-13

Applicant: Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

Inventor： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

IPC: H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

Abstract translation: 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。