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公开(公告)号：KR101523984B1
公开(公告)日：2015-05-29
申请号：KR1020130169406
申请日：2013-12-31
Applicant: (재)한국나노기술원
IPC: H01L29/80 , H01L21/336
CPC classification number: H01L29/80 , H01L29/78 , H01L31/042
Abstract: 본발명의일 측면에의하면, 단결정기판; 상기기판상에 n-Type으로등축성장된도핑층;및상기도핑층위에 p-Type으로등축성장된소자층; 을포함하는것을특징으로하는공핍영역을구비한소자를제공한다. 이상에서살펴본본 발명에의하면, 기판위에소자를성장시키는초기에소자와상반된 Type의도펀트를첨가함으로써공핍영역을만들고소자내의전자또는정공이기판쪽으로이동하는것을막는효과가있다.
Abstract translation: 本发明提供一种具有耗尽区的装置，包括： 单晶基板; 在单晶衬底上以n型等长生长的掺杂层; 以及在掺杂层上用p型等长生长的元素层。 根据上述本发明，通过添加与能够在基板上生长元素的初始元素不一致的掺杂剂来制造耗尽区。 此外，防止元件内的电子或孔移动到基板。
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公开(公告)号：KR1020150047827A
公开(公告)日：2015-05-06
申请号：KR1020130127787
申请日：2013-10-25
Applicant: (재)한국나노기술원
CPC classification number: H04N5/33 , H04N5/232 , H04N5/2351 , H04N7/18
Abstract: 본발명은적외선컬러영상획득시스템및 방법에관한것으로서, 적외선컬러영상획득시스템은둘 이상의적외선파장을피사체에조사하는적외선조사장치; 및상기적외선조사장치에의해조사되고상기피사체에의해반사된상기둘 이상의적외선파장을감지하고, 감지된상기둘 이상의적외선파장을미리결정된기준에따라변환및 조합하여컬러영상으로변환하는컬러영상획득장치를포함하고, 상기컬러영상획득장치는반사된상기둘 이상의적외선파장을감지하는촬상소자를포함하는것을특징으로한다.
Abstract translation: 本发明涉及一种使用红外线获得彩色图像的系统和方法，包括：红外辐射装置，其向被摄体照射两个以上的红外波; 以及彩色图像获取装置，其感测由红外线照射装置照射并被对象反射的红外波，并且根据建立的标准通过转换和组合将感测的红外波转换成彩色图像。 彩色图像获取装置包括感测反射的红外波的成像装置。
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公开(公告)号：KR101429478B1
公开(公告)日：2014-08-14
申请号：KR1020130121559
申请日：2013-10-11
Applicant: (재)한국나노기술원
Abstract: The present invention relates to a method of manufacturing a solar cell in which a photoelectric transformation cell is formed by stacking a p+ semiconductor layer and an n+ semiconductor layer in order on a substrate, a lower electrode is formed under the substrate, and an upper electrode is formed on the photoelectric transformation cell and to a solar cell manufactured by the same. The technical point of the present invention is to form a doping compensation layer between the p+ semiconductor layer and the n+ semiconductor layer of the photoelectric transformation cell by raising the temperature in an As atmosphere, waiting for a certain period of time, converting the atmosphere into a P atmosphere, and then waiting for a certain period of time. Accordingly, a p+n(or I)n+ junction Ge solar cell can be manufactured by controlling the spreading of As and P in the photoelectric transformation cell and forming the doping compensation layer, which raises the breakdown voltage and lowers the tunnel current, thereby improving the efficiency and reliability of the solar cell.
Abstract translation: 本发明涉及一种太阳能电池的制造方法，其中通过在基板上依次层叠p +半导体层和n +半导体层而形成光电转换单元，在基板的下方形成下电极， 形成在光电转换单元和由其制造的太阳能电池。 本发明的技术要点是通过在As气氛中升高温度等待一段时间，将气氛转化为空气，形成在光电转换单元的p +半导体层和n +半导体层之间的掺杂补偿层 一个P气氛，然后等待一段时间。 因此，可以通过控制光电转换单元中的As和P的扩展并形成掺杂补偿层来制造p + n（或I）n +结Ge太阳能电池，从而提高击穿电压并降低隧道电流，从而 提高太阳能电池的效率和可靠性。
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公开(公告)号：KR1020140087549A
公开(公告)日：2014-07-09
申请号：KR1020120157977
申请日：2012-12-31
Applicant: (재)한국나노기술원 , 성균관대학교산학협력단
IPC: H01L21/26 , H01L21/324
CPC classification number: H01L21/3221 , H01L21/26513 , H01L21/28512 , H01L21/28518 , H01L21/324 , H01L29/45
Abstract: The present invention relates to a method of repairing a defect in a junction region of a semiconductor device. A p-Ge layer grows on a substrate, and an n+ Ge region is formed on the p-Ge layer through ion implantation or in-situ doping is performed on the upper portion of the p-Ge layer to form the n+ Ge region or an oxide layer is deposited on the p-Ge layer, pattered, etched, and in-situ doped to form the n+ Ge region. After an oxide layer for capping is formed, heat treatment is performed thereon at a temperature of 600-700°C for 1 to 3 hours to deposit an electrode. A leakage current is minimized to improve characteristics of a semiconductor device by relatively reducing deep junction through the heat treatment. The method has advantages in that high integration and refinement of the semiconductor device are realized.
Abstract translation: 本发明涉及修复半导体器件的接合区域中的缺陷的方法。 p-Ge层在衬底上生长，并且通过离子注入在p-Ge层上形成n + Ge区，或者在p-Ge层的上部进行原位掺杂以形成n + Ge区或 氧化物层沉积在p-Ge层上，图案化，蚀刻和原位掺杂以形成n + Ge区域。 在形成用于封盖的氧化物层之后，在600-700℃的温度下对其进行1至3小时的热处理以沉积电极。 通过相对减少通过热处理的深度接合，使漏电流最小化以改善半导体器件的特性。 该方法具有实现半导体器件的高集成度和精细化的优点。
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公开(公告)号：KR1020110128527A
公开(公告)日：2011-11-30
申请号：KR1020100048025
申请日：2010-05-24
Applicant: (재)한국나노기술원
IPC: H01L31/042 , H01L31/054
CPC classification number: Y02E10/50 , H01L31/042 , H01L31/054
Abstract: PURPOSE: A side exposure type solar battery is provided to increase efficiency by differently forming a part in which sunlight is income and a part in which an electrode is formed and to reduce series resistance of a solar battery. CONSTITUTION: A solar battery comprises a solar battery cell, a first electrode(220), and a second electrode(230). A light receiving part(211) in which external light is income is formed on a first side of the solar battery cell. The solar battery generates current from the light which is income through the light receiving part. The first electrode is formed on a second side of the solar cell. The second electrode is formed on a third side which is faced with the second side of the solar cell. The first side of the solar cell is different with the second side and the third side of the solar cell.
Abstract translation: 目的：提供侧曝式太阳能电池，以通过不同地形成阳光收入的部分和形成电极的部分来提高效率，并降低太阳能电池的串联电阻。 构成：太阳能电池包括太阳能电池单元，第一电极（220）和第二电极（230）。 在太阳能电池单元的第一侧上形成有外部光收入的受光部（211）。 太阳能电池从通过光接收部分收入的光产生电流。 第一电极形成在太阳能电池的第二侧上。 第二电极形成在面对太阳能电池的第二面的第三面上。 太阳能电池的第一面与太阳能电池的第二面和第三面不同。
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Patent Agency Ranking
公开(公告)号：KR101068173B1
公开(公告)日：2011-09-27
申请号：KR1020100001528
申请日：2010-01-08
Applicant: (재)한국나노기술원
IPC: H01L31/04 , H01L21/306
CPC classification number: Y02E10/50
Abstract: 본 발명은 윈도우층의 산화를 방지하고, 캡층 제조시 윈도우층이 식각되지 않는 태양전지에 관한 것이다. 본 발명에 따른 태양전지는 기판 상에 형성되며 광신호를 전기적 신호로 변환하는 광전 변환셀과, 광전 변환셀 상에 형성되며 알루미늄을 포함한 화합물 반도체로 이루어진 제1 윈도우층(window layer)과, 제1 윈도우층 상에 형성되며 내산화성을 갖는 물질로 이루어진 제2 윈도우층과, 제2 윈도우층 상에 형성되는 캡층(cap layer)과, 기판의 하부에 형성되는 하부 전극과 캡층 상에 형성되는 상부 전극을 구비한다. 그리고 제2 윈도우층은 캡층과 서로 다른 식각 선택비(etch selectivity)를 갖는 물질로 이루어진다.
Abstract translation: 本发明涉及防止窗层氧化并且在盖层制造期间不蚀刻窗口层的太阳能电池。 根据本发明的太阳能电池包括：光电转换单元，形成在基板上并将光信号转换为电信号;第一窗口层，形成在光电转换单元上并由含有铝的化合物半导体制成; 第二窗口层，其形成在第一窗口层上并由具有抗氧化性的材料制成;盖层，其形成在第二窗口层上;下部电极，其形成在衬底的下部上; 设置有电极。 并且第二窗口层由与盖层具有不同蚀刻选择性的材料制成。
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公开(公告)号：KR1020100044369A
公开(公告)日：2010-04-30
申请号：KR1020080103477
申请日：2008-10-22
Applicant: (재)한국나노기술원
IPC: H01L31/054
CPC classification number: Y02E10/50 , H01L31/054
Abstract: PURPOSE: A solar cell is provided to collect the every wavelength of sunlight in order to absorb the sunlight by arranging a photoelectric conversion layer which absorbs a long wavelength and a short wavelength on the front and the rear end of a light collecting unit. CONSTITUTION: A first photoelectric conversion layer(230) absorbs incident sunlight and converts the sunlight to electrical signal. A second photoelectric conversion layer(260) is arranged on the front end of the first photoelectric conversion layer. The second photoelectric conversion layer absorbs the sunlight and converts the sunlight to the electrical signal. A light collection unit(210) is arranged between the first photoelectric conversion layer and the second photoelectric conversion layer.
Abstract translation: 目的：提供一种太阳能电池，用于通过布置在聚光单元的前端和后端上吸收长波长和短波长的光电转换层来收集每一个波长的阳光以吸收太阳光。 构成：第一光电转换层（230）吸收入射的太阳光并将太阳光转换成电信号。 第二光电转换层（260）布置在第一光电转换层的前端。 第二光电转换层吸收太阳光并将太阳光转换成电信号。 第一光电转换层和第二光电转换层之间布置有光收集单元（210）。
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公开(公告)号：KR102252449B1
公开(公告)日：2021-05-14
申请号：KR1020190127781
申请日：2019-10-15
Applicant: (재)한국나노기술원
Abstract: 본발명에서는 10000um2 이하의발광부면적을갖는마이크로 LED 장치가개시된다. 본발명의일 실시예에따른마이크로 LED 장치는상기마이크로 LED 장치는 P형반도체, 발광부및 N형반도체가적층되는적층구조를포함하고, 상기발광부의사이드월바깥면에쇼키컨택된금속층이형성된다.
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公开(公告)号：KR101744011B1
公开(公告)日：2017-06-08
申请号：KR1020150080780
申请日：2015-06-08
Applicant: (재)한국나노기술원
Inventor： 전동환
IPC: G01N21/35 , G01N21/3504 , G01N21/3554 , G01N21/31 , G01N21/59
Abstract: 본발명은매질분석장치및 그방법에관한것으로, 둘이상의파장을갖는빛을발생시키는광원, 상기빛이통과하는매질, 상기매질을통과한빛 중서로다른파장을갖는빛을필터링하는둘 이상의필터, 상기필터를통과한서로다른파장을갖는빛을검출하는둘 이상의검출기, 및상기둘 이상의검출기에의해검출된결과의비율또는결과의차이에기초하여상기매질에포함된입자의농도를분석하는분석기를포함한다. 본발명에따르면, 소형화된매질분석장치를구현할수 있다.
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公开(公告)号：KR1020170003838A
公开(公告)日：2017-01-10
申请号：KR1020150093610
申请日：2015-06-30
Applicant: (재)한국나노기술원
IPC: H01L21/203 , H01L21/314 , H01L21/324
Abstract: 본발명은실리콘기판상에화합물반도체에피층을성장하는방법에관한것으로서, 실리콘기판상에화합물반도체에피층을성장하는방법에있어서, 상기실리콘기판과화합물반도체에피층사이에탄성변형층의형성과열처리를반복적으로실시하여, 상기실리콘기판과화합물반도체에피층간의결함을억제하는것을특징으로하는실리콘기판상에결함이억제된화합물반도체에피층의성장방법을기술적요지로한다. 이에의해실리콘기판과화합물반도체에피층사이에탄성변형층의형성과열처리를반복적으로실시하여, 열처리온도를낮추고, 열처리시간을최소화하여공정시간을단축시키며, 실리콘기판과화합물반도체에피층간의계면에서나타나는결함들간의상호작용을유도함으로써, 결함을억제하여화합물반도체소자의성능을개선시키는이점이있다.
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