公开(公告)号：SG2014005136A

公开(公告)日：2014-03-28

申请号：SG2014005136

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

公开(公告)号：SG171683A1

公开(公告)日：2011-06-29

申请号：SG2011033982

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350 degree C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：EP2078102A4

公开(公告)日：2010-11-24

申请号：EP07758383

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C07F7/30 ,  C23C16/22 ,  H01L45/00

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

公开(公告)号：AP201407781A0

公开(公告)日：2014-07-31

申请号：AP201407781

申请日：2012-12-13

Applicant: ADVANCED TECH MATERIALS

Inventor： JIANG PING ,  KORZENSKI MICHAEL B ,  CHEN TIANNIU

IPC: B09B3/00 ,  B09B5/00 ,  B29B17/02 ,  H05K3/34

公开(公告)号：AP2014007781A0

公开(公告)日：2014-07-31

申请号：AP2014007781

申请日：2012-12-13

Applicant: ADVANCED TECH MATERIALS

Inventor： JIANG PING ,  KORZENSKI MICHAEL B ,  CHEN TIANNIU

IPC: B09B3/00 ,  B09B5/00 ,  B29B17/02 ,  H05K3/34

公开(公告)号：SG189292A1

公开(公告)日：2013-05-31

申请号：SG2013025697

申请日：2011-10-06

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：SG173172A1

公开(公告)日：2011-08-29

申请号：SG2011054442

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

公开(公告)号：SG152203A1

公开(公告)日：2009-05-29

申请号：SG2008080699

申请日：2008-10-30

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN PHILIP S H ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS ,  XU CHONGYING ,  ROEDER JEFFREY F ,  LI WEIMIN

Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2)2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications. Figure 13

公开(公告)号：GB2405404B

公开(公告)日：2008-07-16

申请号：GB0418732

申请日：2004-08-20

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  BAUM THOMAS H ,  LAXMAN RAVI K ,  BOROVIK ALEXANDER S

IPC: C07F7/21 ,  B01D3/36 ,  C07F7/08 ,  C07F7/20 ,  C08G77/34 ,  C09D4/00 ,  C23C16/40 ,  C23C16/44 ,  H01L21/312

Abstract: A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.

公开(公告)号：GB2425308A

公开(公告)日：2006-10-25

申请号：GB0609590

申请日：2004-10-12

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C07F9/02 ,  C07C211/65 ,  C07F9/00 ,  C23C16/00 ,  C23C16/34 ,  C23C16/40 ,  H01L21/44

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.