公开(公告)号：WO2016012316A1

公开(公告)日：2016-01-28

申请号：PCT/EP2015/066110

申请日：2015-07-15

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank ,  HINNEN, Paul, Christiaan ,  JUNGBLUT, Reiner, Maria

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641

Abstract: Disclosed is a method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method comprises obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following exposure of the substrate using a lithographic process, and a corresponding set of actual processing parameter values comprising the actual value of a processing parameter of the lithographic process during the exposure at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.

Abstract translation: 公开了一种确定光刻工艺的工艺窗口的方法，该工艺窗口描述了在光刻工艺期间至少一个处理参数中可接受的变化程度。 该方法包括获得一组输出参数值，该组输出参数值从在基板上的多个位置处执行的测量导出，在使用光刻处理的基板曝光之后，以及包括处理参数的实际值的对应的一组实际处理参数值 在多个位置的每一个曝光期间的光刻处理。 过程窗口由输出参数值和实际处理参数值确定。 该处理窗口可以用于改进执行后续光刻处理的处理参数的选择。

公开(公告)号：WO2022022949A1

公开(公告)日：2022-02-03

申请号：PCT/EP2021/068589

申请日：2021-07-06

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Fei ,  LIAN, Jin ,  HUANG, Zhuangxiong ,  DE WINTER, Laurentius, Cornelius ,  STAALS, Frank

IPC: G03F7/20 ,  G03F9/00 ,  G03F1/44

Abstract: Disclosed is a method for focus measurement of a lithographic process. The method comprises receiving a substrate on which a metrology pattern has been printed with a lithographic apparatus with an illumination pupil, illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern, and determining or monitoring a focus of the lithographic process based on the measured signal. Position of at least part of the metrology pattern is focus dependent. At least part of the metrology pattern has been printed by the lithography apparatus with an angular asymmetric illumination pupil.

公开(公告)号：WO2020104114A1

公开(公告)日：2020-05-28

申请号：PCT/EP2019/078087

申请日：2019-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank

IPC: G03F7/20 ,  G03F1/44

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus. The method comprises using the lithographic apparatus to print at least one focus metrology pattern on a substrate, the printed focus metrology pattern comprising at least a first periodic array of features, and using inspection radiation to measure asymmetry between opposite portions of a diffraction spectrum for the first periodic array in the printed focus metrology pattern. A measurement of focus performance is derived based at least in part on the asymmetry measured. The first periodic array comprises a repeating arrangement of a space region having no features and a pattern region having at least one first feature comprising sub-features projecting from a main body and at least one second feature; and wherein the first feature and second feature are in sufficient proximity to be effectively detected as a single feature during measurement. A patterning device comprising said first periodic array is also disclosed.

公开(公告)号：WO2020015947A1

公开(公告)日：2020-01-23

申请号：PCT/EP2019/066147

申请日：2019-06-19

Applicant: ASML NETHERLANDS B.V.

Inventor： GARCIA GRANDA, Miguel ,  STEEN, Steven, Erik ,  BROUWER, Eric, Jos, Anton ,  SEGERS, Bart, Peter, Bert ,  GUITTET, Pierre-Yves, Jerome, Yvan ,  STAALS, Frank ,  VAN ADRICHEM, Paulus, Jacobus, Maria

IPC: G03F7/20 ,  G03F1/44

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

公开(公告)号：WO2019233738A1

公开(公告)日：2019-12-12

申请号：PCT/EP2019/062767

申请日：2019-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TRIPODI, Lorenzo ,  WARNAAR, Patrick ,  GRZELA, Grzegorz ,  HAJIAHMADI, Mohammadreza ,  FARHADZADEH, Farzad ,  TINNEMANS, Patricius, Aloysius Jacobus ,  MIDDLEBROOKS, Scott, Anderson ,  KOOPMAN, Adrianus, Cornelis, Matheus ,  STAALS, Frank ,  PETERSON, Brennan ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.

公开(公告)号：WO2019063206A1

公开(公告)日：2019-04-04

申请号：PCT/EP2018/072605

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick ,  SLACHTER, Abraham ,  ANUNCIADO, Roy ,  VAN GORP, Simon, Hendrik, Celine ,  STAALS, Frank ,  JOCHEMSEN, Marinus

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image -related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：WO2019048147A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/071103

申请日：2018-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： DE WINTER, Laurentius, Cornelius ,  STOLK, Roland, Pieter ,  STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  HINNEN, Paul, Christiaan ,  JOCHEMSEN, Marinus ,  THEEUWES, Thomas ,  VAN SETTEN, Eelco

IPC: G03F7/20 ,  G03F1/24 ,  G21K1/06

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus- dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：WO2019037953A1

公开(公告)日：2019-02-28

申请号：PCT/EP2018/069265

申请日：2018-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： LI, Fahong ,  GARCIA GRANDA, Miguel ,  LUIJTEN, Carlo, Cornelis, Maria ,  SEGERS, Bart, Peter, Bert ,  VAN DER POEL, Cornelis, Andreas, Franciscus, Johannes ,  STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  RIDANE, Mohamed

IPC: G03F7/20

Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004') to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (Fig. 13-15) uses two aberration settings (+AST, -AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (Fig. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.

公开(公告)号：WO2018149553A1

公开(公告)日：2018-08-23

申请号：PCT/EP2018/050135

申请日：2018-01-03

Applicant: ASML NETHERLANDS B.V.

Inventor： SCHMITT-WEAVER, Emil, Peter ,  BHATTACHARYYA, Kaustuve ,  TEL, Wim, Tjibbo ,  STAALS, Frank ,  LEVASIER, Leon, Martin

IPC: G03F7/20 ,  G03F9/00 ,  G01N21/93

Abstract: Disclosed is a method for monitoring a lithographic process, and associated lithographic apparatus. The method comprises obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.

公开(公告)号：WO2018019496A1

公开(公告)日：2018-02-01

申请号：PCT/EP2017/065448

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank ,  DE NIVELLE, Martin Jules Marie-Emile ,  HASAN, Tanbir

IPC: G03F9/00

CPC classification number: G03F9/7034 ,  G05B19/4097 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus comprising such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.

Abstract translation: 确定已经应用了一种或多种图案的衬底上的形貌变化的方法。 该方法包括获得测量的形貌数据，所述测量的形貌数据表示通过光刻工艺已经施加了一个或多个图案的衬底上的形貌变化; 以及将所测量的地形数据与关于管芯内拓扑的知识相结合以获得具有比所测量的地形数据的分辨率更高的分辨率的派生地形数据。 还公开了包括这样的水平传感器装置的相应的水平传感器装置和光刻设备以及更一般的方法，该方法根据衬底上的物理参数的变化的第一测量数据和芯片上的管芯内测量数据来确定物理参数的变化 比第一次测量数据更高的分辨率，并结合这些数据。